This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
· –2A, –30 V. RDS(ON)= 80 mW@ VGS= –10 V
RDS(ON)= 125mW@ VGS= –4.5 V
· Low gate charge (6.2 nC typical)
· High performance trench technologyfor extremely low RDS(ON).
· High power version of industry Standard SOT-23 package.Identical pin-out to SOT-23 with 30%
higher power handling capability.