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FDN358 Datasheet PDF - Fairchild Semiconductor

Part NumberFDN358 Fairchild
Fairchild Semiconductor Fairchild
DescriptionP-Channel Logic Level Enhancement Mode Field Effect Transistor
FDN358 Datasheet PDF : FDN358 pdf   
FDN358 image

General Description
SuperSOT™-3  P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and  other battery powered circuits where fast  switching, and low in-line power loss are needed in a very small outline surface mount package.

-1.5 A, -30V,  RDS(ON)= 0.125 W@ VGS= -10V
                  RDS(ON)= 0.20 W@ VGS= - 4.5V.
High power version of industry SOT-23 package:identical
pin out to SOT-23; 30% higher power handling capability.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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