SuperSOT™-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
-1.5 A, -30V, RDS(ON)= 0.125 W@ VGS= -10V
RDS(ON)= 0.20 W@ VGS= - 4.5V.
High power version of industry SOT-23 package:identical
pin out to SOT-23; 30% higher power handling capability.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.