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FDN357N Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FDN357N N-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild
Fairchild Semiconductor Fairchild
FDN357N Datasheet PDF : FDN357N pdf   
FDN357N image

General Description
SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
   
Features
■ 1.9 A, 30 V,  RDS(ON) = 0.090 W @ VGS = 4.5 V
                        RDS(ON) = 0.060 W @ VGS = 10 V.
■ Industry standard outline SOT-23 surface mount
    package using proprietary SuperSOTTM-3 design for
    superior thermal and electrical capabilities.
■ High density cell design for extremely low RDS(ON).
■ Exceptional on-resistance and maximum DC current
    capability.
   

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