This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for
superior switching performance.
• 3 A, 20 V. Rds(on)= 0.035 Ω @ Vgs 4.5 V
Rds(on)= 0.050 Ω @ Vgs= 2.5 V.
• Low gate charge (7nC typical).
• High performance trench technology for extremely low Rds(on).
• High power and current handling capability.
• DC/DC converter
• Load switch