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FDN339AN Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FDN339AN N-Channel 2.5V Specified PowerTrench MOSFET Fairchild
Fairchild Semiconductor Fairchild
FDN339AN Datasheet PDF : FDN339AN pdf   
FDN339AN image

General Description
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for
superior switching performance.

• 3 A, 20 V. Rds(on)= 0.035 Ω @ Vgs 4.5 V
                  Rds(on)= 0.050 Ω @ Vgs= 2.5 V.
• Low gate charge (7nC typical).
• High performance trench technology for extremely low Rds(on).
• High power and current handling capability.

• DC/DC converter
• Load switch

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