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FDN338 Datasheet PDF - Fairchild Semiconductor

Part NumberFDN338 Fairchild
Fairchild Semiconductor Fairchild
DescriptionP-Channel 2.5V Specified PowerTrench® MOSFET
FDN338 Datasheet PDF : FDN338 pdf   
FDN338 image

General Description
This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

· –1.6 A, –20 V. RDS(ON) = 115 mW @ VGS = –4.5 V
                     RDS(ON) = 155 mW @ VGS = –2.5 V
· Fast switching speed
· High performance trench technology for extremely low RDS(ON)
· SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint

· Battery management
· Load switch
· Battery protection


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