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FDG6335N Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FDG6335N 20V N-Channel PowerTrench® MOSFET Fairchild
Fairchild Semiconductor Fairchild
FDG6335N Datasheet PDF : FDG6335N pdf   
FDG6335N image

General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.

Features
• 0.7 A, 20 V.
   RDS(ON) = 300 mW @ VGS = 4.5 V
   RDS(ON) = 400 mW @ VGS = 2.5 V
• Low gate charge (1.1 nC typical)
• High performance trench technology for extremely low RDS(ON)
• Compact industry standard SC70-6 surface mount package

Applications
• DC/DC converter
• Power management
• Loadswitch

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