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F1S22N10 Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
F1S22N10 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs Fairchild
Fairchild Semiconductor Fairchild
F1S22N10 Datasheet PDF : F1S22N10 pdf   
RFP22N10 image

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.

• 22A, 100V
• rDS(ON) = 0.080Ω
• UIS SOA Rating Curve (Single Pulse)
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 175oC Operating Temperature
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount
      Components to PC Boards”

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