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20N60A4D Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
20N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Fairchild
Fairchild Semiconductor Fairchild
Other PDF  no available.
20N60A4D Datasheet PDF : 20N60A4D pdf   
HGTG20N60A4D image

The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372.

Features
• >100kHz Operation At 390V, 20A
• 200kHz Operation At 390V, 12A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . 55ns at TJ = 125°C
• Low Conduction Loss
• Temperature Compensating SABER™ Model

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