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HM5225165B-75 Datasheet PDF - Elpida Memory, Inc

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HM5225165B-75 Datasheet PDF : HM5225165B-75 pdf     
HM5225405BTT-75 image

Description
The HM5225165B is a 256-Mbit SDRAM organized as 4194304-word × 16-bit × 4 bank. The HM5225805B is a 256-Mbit SDRAM organized as 8388608-word × 8-bit × 4 bank. The HM5225405B is a 256-Mbit SDRAM organized as 16777216-word × 4-bit × 4 bank. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54-pin plastic TSOP II.

Features
• 3.3 V power supply
• Clock frequency: 133 MHz/100 MHz (max)
• LVTTL interface
• Single pulsed RAS
• 4 banks can operate simultaneously and independently
• Burst read/write operation and burst read/single write operation capability
• Programmable burst length: 1/2/4/8
• 2 variations of burst sequence
    - Sequential (BL = 1/2/4/8)
    - Interleave (BL = 1/2/4/8)
• Programmable CAS latency: 2/3
• Byte control by DQM : DQM (HM5225805B/HM5225405B) : DQMU/DQML (HM5225165B)
• Refresh cycles: 8192 refresh cycles/64 ms
• 2 variations of refresh
    - Auto refresh
    - Self refresh

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Part Name
Description
PDF
Manufacturer
64M LVTTL Interface SDRAM 100 MHz 1-Mword x 16-bit x 4-bank/ 2-Mword x 8-bit x 4-bank/ 4-Mword x 4-bit x 4-bank PC/100 SDRAM
Hitachi -> Renesas Electronics
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Hitachi -> Renesas Electronics
133 Mhz LVTTL synchronous DRAM, 2M x 8 bit x 4 banks / 400mil 54pin TSOPII
A-Data Technology
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Flexible, Flame-Retardant, General Purpose, Polyolefin Tubing
TE Connectivity
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33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD BY 8-BIT) CMOS SRAM Stacked - µ MCP (micro Multi Chip Package)
Renesas Electronics

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