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HB52RD648DC-B Datasheet PDF - Elpida Memory, Inc

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HB52RD648DC-B Datasheet PDF : HB52RD648DC-B pdf     
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Description
The HB52RF648DC, HB52RD648DC are a 32M × 64 × 2 banks Synchronous Dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 16 pieces of 256-Mbit SDRAM (HM5225805BTB) sealed in TCP package and 1 piece of serial EEPROM (2-kbit) for Presence Detect (PD). An outline of the products is 144-pin Zig Zag Dual tabs socket type compact and thin package. Therefore, they make high density mounting possible without surface mount technology. They provide common data inputs and outputs. Decoupling capacitors are mounted beside TCP on the module board.

Features
• Fully compatible with: JEDEC standard outline 8-byte S.O.DIMM
• 144-pin Zig Zag Dual tabs socket type (dual lead out)
    - Outline: 67.60 mm (Length) × 31.75 mm (Height) × 3.80 mm (Thickness)
    - Lead pitch: 0.80 mm
• 3.3 V power supply
• Clock frequency: 133/100 MHz (max)
• LVTTL interface
• Data bus width: × 64 Non parity
• Single pulsed RAS
• 4 Banks can operates simultaneously and independently
• Burst read/write operation and burst read/single write operation capability
• Programmable burst length : 1/2/4/8
• 2 variations of burst sequence
    - Sequential
    - Interleave
• Programmable CE latency: 2/3
• Byte control by DQMB
• Refresh cycles: 8192 refresh cycles/64 ms
• 2 variations of refresh
    - Auto refresh
    - Self refresh
• Low self refresh current: HB52RF648DC-xxBL (L-version) : HB52RD648DC-xxBL (L-version)

 

Part Name
Description
PDF
Manufacturer
256M LVTTL interface SDRAM 100 MHz 1-Mword × 64-bit × 4-bank/2-Mword × 32-bit × 4-bank PC/100 SDRAM
Hitachi -> Renesas Electronics
64M LVTTL Interface SDRAM 100 MHz 1-Mword x 16-bit x 4-bank/ 2-Mword x 8-bit x 4-bank/ 4-Mword x 4-bit x 4-bank PC/100 SDRAM
Hitachi -> Renesas Electronics
128M LVTTL interface SDRAM 100 MHz 1-Mword ×32-bit ×4-bank PC/100 SDRAM
Hitachi -> Renesas Electronics
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules
Infineon Technologies
3.3 VOLT 16M x 64 (using 8M x 16) PC133 UNBUFFERED SDRAM MODULE
Mosel Vitelic, Corp
3.3 VOLT 16M x 64 (using 8M x 16) PC133 UNBUFFERED SDRAM MODULE
Mosel Vitelic Corporation
64 Mbit (4 Mb ×16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb ×16) PSRAM, multi-chip package
STMicroelectronics
64 Mbit (4 Mb ×16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb ×16) PSRAM, multi-chip package
Numonyx -> Micron
3.3 V 8M × 64/72-Bit 1 Bank SDRAM Module, 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module
Siemens AG
3.3 V 8M × 64/72-Bit 1 Bank SDRAM Module, 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module
Infineon Technologies

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