datasheetbank_Logo     Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  Elpida  >>> EBE10RD4ABFA PDF

EBE10RD4ABFA Datasheet PDF - Elpida Memory, Inc

Part NameDescriptionManufacturer
EBE10RD4ABFA 1GB Registered DDR2 SDRAM DIMM Elpida
Elpida Memory, Inc Elpida
Other PDF  no available.
EBE10RD4ABFA Datasheet PDF : EBE10RD4ABFA pdf   
EBE10RD4ABFA-5C-E image

Description
The EBE10RD4ABFA is a 128M words × 72 bits, 1 rank DDR2 SDRAM Module, mounting 18 pieces of DDR2 SDRAM sealed in FBGA (µBGA) package. Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data transfer is realized by the 4bits prefetch-pipelined architecture. Data strobe (DQS and /DQS) both for read and write are available for high speed and reliable data bus design.

Features
• 240-pin socket type dual in line memory module (DIMM)
 PCB height: 30.0mm
 Lead pitch: 1.0mm
 Lead-free
• 1.8V power supply
• Data rate: 533Mbps/400Mbps (max.)
• 1.8 V (SSTL_18 compatible) I/O
• Double-data-rate architecture: two data transfers per clock cycle
• Bi-directional, data strobe (DQS and /DQS) is transmitted /received with data, to be used in capturing data at the receiver
• DQS is edge aligned with data for READs; center aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK transitions
• Commands entered on each positive CK edge; data referenced to both edges of DQS
• Four internal banks for concurrent operation (Component)
• Burst length: 4, 8
• /CAS latency (CL): 3, 4, 5
• Auto precharge option for each burst access
• Auto refresh and self refresh modes
• 7.8µs average periodic refresh interval
• Posted CAS by programmable additive latency for better command and data bus efficiency
• Off-Chip-Driver Impedance Adjustment and On-Die Termination for better signal quality
• /DQS can be disabled for single-ended Data Strobe operation
• 1 piece of PLL clock driver, 2 pieces of register driver and 1 piece of serial EEPROM (2k bits EEPROM) for
Presence Detect (PD)

 

Page Links : 1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  17  18  19  20  21  22 
 

Other manufacturer searches related to EBE10RD4ABFA

Part NameDescriptionPDFManufacturer
H5PS1G63EFR 1Gb DDR2 SDRAM H5PS1G63EFR View Hynix Semiconductor
H5PS1G83EFR 1Gb DDR2 SDRAM H5PS1G83EFR View Hynix Semiconductor
M378T3354BG0 DDR2 Unbuffered SDRAM MODULE M378T3354BG0 View Samsung
W9712G6JB 2M X 4 BANKS X 16 BIT DDR2 SDRAM W9712G6JB View Winbond
W971GG6SB-25TR 8M x 8 BANKS x 16 BIT DDR2 SDRAM W971GG6SB-25TR View Winbond
K4T1G044QA-ZCCC 1Gb A-die DDR2 SDRAM Specification K4T1G044QA-ZCCC View Samsung
H5PS1G63JFR 1Gb DDR2 SDRAM H5PS1G63JFR View Hynix Semiconductor
W83178S 100 MHZ 3-DIMM SDRAM BUFFER W83178S View Winbond
K4T1G044QF 1Gb F-die DDR2 SDRAM K4T1G044QF View Samsung
K522H1HACF-B050 2Gb (128M x16) NAND Flash + 1Gb (64M x16 ) Mobile DDR SDRAM K522H1HACF-B050 View Samsung

Share Link : 

한국어 简体中文 日本語 русский español


All Rights Reserved © datasheetbank.com 2014 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]