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N08L163WC2AB-70I Datasheet PDF - ETC

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N08L163WC2AB-70I Datasheet PDF :     
N08L163WC2A image

The N08L163WC2A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power.

Features
• Single Wide Power Supply Range
  2.3 to 3.6 Volts
• Very low standby current
  4.0µA at 3.0V (Typical)
• Very low operating current
  2.0mA at 3.0V and 1µs(Typical)
• Very low Page Mode operating current
  1.0mA at 3.0V and 1µs (Typical)

 

 

Part Name
Description
PDF
Manufacturer
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit
ON Semiconductor
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K × 16 bit
AMI Semiconductor
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
NanoAmp Solutions, Inc.
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
NanoAmp Solutions, Inc.
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit
NanoAmp Solutions, Inc.
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
NanoAmp Solutions, Inc.
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
NanoAmp Solutions, Inc.
32Mb Ultra-Low Power Asynchronous CMOS Pseudo SRAM w/ Page Mode Operation (2M x 16 bit)
NanoAmp Solutions, Inc.
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit
NanoAmp Solutions, Inc.
4Mb Ultra-Low Power Asynchronous CMOS SRAM
NanoAmp Solutions, Inc.

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