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N04L163WC2A Datasheet PDF - ETC

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N04L163WC2A Datasheet PDF : N04L163WC2A pdf     
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The N04L163WC2A is an integrated memory
device containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power
Features
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Very low standby current
4.0μA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V and 1μs (Typical)
• Very low Page Mode operating current
0.8mA at 3.0V and 1μs (Typical)

Page Link's: 1  2  3  4  5  6  7  8  9  10  11 
 

Part Name
Description
PDF
Manufacturer
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
NanoAmp Solutions, Inc.
4Mb Ultra-Low Power Asynchronous CMOS SRAM
NanoAmp Solutions, Inc.
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit
ON Semiconductor
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K × 16 bit
AMI Semiconductor
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
NanoAmp Solutions, Inc.
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
NanoAmp Solutions, Inc.
32Mb Ultra-Low Power Asynchronous CMOS Pseudo SRAM w/ Page Mode Operation (2M x 16 bit)
NanoAmp Solutions, Inc.
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit
NanoAmp Solutions, Inc.
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit
NanoAmp Solutions, Inc.
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
NanoAmp Solutions, Inc.

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