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G30N60C3D Datasheet PDF - ETC

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G30N60C3D Datasheet PDF : G30N60C3D pdf     
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[Harris]

Description
The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25°C and +150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.

Features
• 63A, 600V at TC= +25°C
• Typical Fall Time - 230ns at TJ= +150°C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode

Page Link's: 1  2  3  4  5  6  7  8 
 

Part Name
Description
PDF
Manufacturer
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Harris Semiconductor
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Intersil
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Fairchild Semiconductor
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Intersil
45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Intersil
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Intersil
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Intersil
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Harris Semiconductor
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Fairchild Semiconductor
45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Fairchild Semiconductor

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