datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  ETC  >>> FQPF3N60 PDF

FQPF3N60 Datasheet PDF - ETC

Part Name
Description
Manufacturer
Other PDF
  no available.
PDF
FQPF3N60 Datasheet PDF : FQPF3N60 pdf     
FQPF3N60 image

[KERSEMI]

General Description
These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.

Features
• 2.0A, 600V, RDS(on)= 3.6Ω@VGS= 10 V
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 5.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Page Link's: 1  2  3  4  5  6  7 
 

Part Name
Description
PDF
Manufacturer
600V N-Channel MOSFET
Wisdom technologies
600V N-Channel MOSFET
Wisdom technologies
600V N-Channel MOSFET
Tiger Electronic
600V N-Channel MOSFET
Tiger Electronic
600V N-Channel MOSFET
Fairchild Semiconductor
600V N-Channel MOSFET
Kersemi Electronic Co., Ltd.
600V N-Channel MOSFET
Fairchild Semiconductor
600V N-Channel MOSFET
Fairchild Semiconductor
600V N-Channel MOSFET
Fairchild Semiconductor
600V N-Channel MOSFET
Fairchild Semiconductor

Share Link : 

한국어 简体中文 日本語 русский español

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]