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UPC8179TB Datasheet PDF - California Eastern Laboratories.

Part NameDescriptionManufacturer
UPC8179TB SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS CEL
California Eastern Laboratories. CEL
UPC8179TB Datasheet PDF : UPC8179TB pdf   
UPC8179TB image

DESCRIPTION
NECs UPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can be realized on internal 50Ω wideband matched IC. This low current amplifier uns on 3.0 V. This IC is manufactured using NECs 30 GHz fMAX UHS0 (Ultra High Speed Process) silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/ migration. Thus this IC has exellent performance uniformity and reliability.

FEATURES
• HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold Package (2.0 x 1.25 x 0.9 mm)
• SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V
• HIGH EFFICIENCY: PO(1dB) = +3.0 dBm TYP at f = 1.0 GHz PO(1dB) = +1.5 dBm TYP at f = 1.9 GHz PO(1dB) = +1.0 dBm TYP at f = 2.4 GHz
• POWER GAIN: GP = 13.5 dB TYP at f = 1.0 GHz GP = 15.5 dB TYP at f = 1.9 GHz GP = 15.5 dB TYP at f = 2.4 GHz
• EXCELLENT ISOLATION: ISL = 44 dB TYP at f = 1.0 GHz ISL = 42 dB TYP at f = 1.9 GHz ISL = 41 dB TYP at f = 2.4 GHz
• LOW CURRENT CONSUMPTION: ICC = 4.0 mA TYP AT VCC = 3.0 V
• OPERATING FREQUENCY: ICC = 4.0 mA TYP AT VCC = 3.0 V
• LIGHT WEIGHT: 7 mg (standard Value)

APPLICATIOIN
• Buffer amplifiers for 0.1 to 2.4 GHz mobile communications systems.

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