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NE434S01-T1 Datasheet PDF - California Eastern Laboratories.

Part NameDescriptionManufacturer
NE434S01-T1 C BAND SUPER LOW NOISE HJ FET CEL
California Eastern Laboratories. CEL
Other PDF  no available.
NE434S01-T1 Datasheet PDF : NE434S01-T1 pdf   
NE434S01-T1 image

DESCRIPTION
The NE434S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems.

FEATURES
• VERY LOW NOISE FIGURE: 0.35 dB TYP at 4 GHz
• HIGH ASSOCIATED GAIN: 15.5 dB TYP at 4 GHz
• GATE WIDTH: 280 µm
• TAPE & REEL PACKAGING OPTION AVAILABLE
• LOW COST PLASTIC PACKAGE

 

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