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NE33284AS Datasheet PDF - California Eastern Laboratories.

Part NameDescriptionManufacturer
NE33284AS SUPER LOW NOISE HJ FET CEL
California Eastern Laboratories. CEL
Other PDF  no available.
NE33284AS Datasheet PDF : NE33284AS pdf   
NE33284A-T1 image

DESCRIPTION
The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume consumer and industrial applications.

FEATURES
• VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz
• HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz
• GATE LENGTH: 0.3 µm
• GATE WIDTH: 280 µm
• LOW COST METAL/CERAMIC PACKAGE
• TAPE & REEL PACKAGING OPTION AVAILABLE

 

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