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BS616UV8021 Datasheet PDF - Brilliance Semiconductor

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BS616UV8021 Datasheet PDF : BS616UV8021 pdf     
BS616UV8021FC image

DESCRIPTION
The BS616UV8021 is a high performance, ultra low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits or 1,048,576 bytes by 8 bits selectable by CIO pin and operates from a wide range of 1.8V to 2.3V supply voltage.

FEATURES
• Ultra low operation voltage : 1.8 ~ 2.3V
• Ultra low power consumption :
    Vcc = 2.0V C-grade: 20mA (Max.) operating current
        I-grade : 25mA (Max.) operating current
        0.6uA (Typ.) CMOS standby current
• High speed access time :
    -70 70ns (Max.) at Vcc=2.0V
    -10 100ns (Max.) at Vcc=2.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
• I/O Configuration x8/x16 selectable by CIO, LB and UB pin

 

Part Name
Description
PDF
Manufacturer
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Unspecified
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8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
NanoAmp Solutions, Inc.
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
NanoAmp Solutions, Inc.

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