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N04Q1618C2BX-15C Datasheet PDF - AMI Semiconductor

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N04Q1618C2BX-15C Datasheet PDF : N04Q1618C2BX-15C pdf     
N04Q1618C2B image

Overview
The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using AMI Semiconductor’s advanced CMOS technology to provide ultra-low active and standby power.

Features
• Multiple Power Supply Ranges
    1.1V - 1.3V
    1.65V - 1.95V
• Dual Vcc / VccQ Power Supplies
    1.2V Vcc with 3V VccQ
    1.8V Vcc with 3V VccQ
• Very low standby current
    50nA typical for 1.2V operation
• Very low operating current
    400µA typical for 1.2V operation at 1µs
• Very low Page Mode operating current
    80µA typical for 1.2V operation at 1µs
• Simple memory control
    Dual Chip Enables (CE1 and CE2)
    Byte control for independent byte operation
    Output Enable (OE) for memory expansion
• Automatic power down to standby mode
• BGA, TSOP and KGD options
• RoHS Compliant

 

Part Name
Description
PDF
Manufacturer
4Mb Ultra-Low Power Asynchronous CMOS SRAM
Unspecified
4Mb Ultra-Low Power Asynchronous CMOS SRAM
Unspecified
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NanoAmp Solutions, Inc.
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY
NanoAmp Solutions, Inc.
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction
Unspecified
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
Unspecified
4Mb Ultra-Low Power Asynchronous CMOS SRAM
NanoAmp Solutions, Inc.
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit
ON Semiconductor
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
NanoAmp Solutions, Inc.
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
NanoAmp Solutions, Inc.

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