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AM29LV6402M Datasheet PDF - Advanced Micro Devices

Part NameDescriptionManufacturer
AM29LV6402M 128 Megabit (4 M x 32-Bit/8 M x 16-Bit) MirrorBit™ 3.0 Volt-only Uniform Sector Flash Memory with Versatile I/O™ Control AMD
Advanced Micro Devices AMD
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AM29LV6402M Datasheet PDF : AM29LV6402M pdf   
L6402ML11RI image

The Am29LV6402M consists of two 64 Mbit, 3.0 volt single power supply flash memory devices and is organized as 4,194,304 doublewords or 8,388,608 words. The device has a 32-bit wide data bus that can also function as an 16-bit wide data bus by using the WORD# input. The device can be programmed either in the host system or in standard EPROM programmers.

■ Single power supply operation
    — 3 volt read, erase, and program operations
■ VersatileI/OTM control
    — Device generates data output voltages and tolerates data input voltages on the CE# and DQ inputs/outputs as determined by the voltage on the VIO pin; operates from 1.65 to 3.6 V
■ Manufactured on 0.23 µm MirrorBitTM process technology
■ SecSi™ (Secured Silicon) Sector region
    — 128-doubleword/256-word sector for permanent, secure identification through an 8-doubleword/16-word random Electronic Serial Number, accessible through a command sequence
    — May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
    — One hundred twenty-eight 32 Kdoubleword (64 Kword) sectors
■ Compatibility with JEDEC standards
    — Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection
■ 100,000 erase cycles per sector
■ 20-year data retention at 125°C

■ High performance
    — 100 ns access time
    — 30 ns page read times
    — 0.5 s typical sector erase time
    — 22 µs typical write buffer doubleword programming time: 16-doubleword/32-word write buffer reduces overall programming time for multiple-word updates
    — 4-doubleword/8-word page read buffer
    — 16-doubleword/32-word write buffer
■ Low power consumption (typical values at 3.0 V, 5 MHz)
    — 26 mA typical active read current
    — 100 mA typical erase/program current
    — 2 µA typical standby mode current
■ Package options
    — 80-ball Fortified BGA

■ Software features
    — Program Suspend & Resume: read other sectors before programming operation is completed
    — Erase Suspend & Resume: read/program other sectors before an erase operation is completed
    — Data# polling & toggle bits provide status
    — Unlock Bypass Program command reduces overall multiple-word or byte programming time
    — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
■ Hardware features
    — Sector Group Protection: hardware-level method of preventing write operations within a sector group
    — Temporary Sector Unprotect: VID-level method of changing code in locked sectors
    — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings
    — Hardware reset input (RESET#) resets device
    — Ready/Busy# output (RY/BY#) detects program or erase cycle completion


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