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Part Name(s) : MG25Q2YS40 Toshiba
Toshiba
Description : GTR MODULE SILICON N CHANNEL IGBT View

GTR MODULE SILICONCHANNEL IGBT
HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS

Part Name(s) : MG25Q6ES42 Toshiba
Toshiba
Description : GTR MODULE SILICON N CHANNEL IGBT View

GTR MODULE SILICON N CHANNEL IGBT

HIGH POWER SWITCHING APPLICATIONS.
MOTOR CONTROL APPLICATIONS.

Part Name(s) : MG25J1BS11 Toshiba
Toshiba
Description : GTR MODULE SILICON N - CHANNEL IGBT View

GTR MODULE SILICON N - CHANNEL IGBT

HIGH POWER SWITCHING APPLICATIONS.
MOTOR CONTROL APPLICATIONS.
.

Part Name(s) : ISL9V5036P3 ISL9V5036S3 ISL9V5036S3S ISL9V5036S3ST V5036P V5036S Fairchild
Fairchild Semiconductor
Description : EcoSPARK? 500mJ, 360V, N-CHANNEL Ignition IGBT View

General Description
The ISL9V5036S3ST, ISL9V5036P3, and ISL9V5036S3 are the next generation IGBTs that offer outstanding SCIS capability in the D²- Pak (TO-263) and TO-220 plastic package. These devices are intended for use in automotive ignition circuits, specifically as coil drivers. Internal diodes provide voltage clamping without the need for external components.
EcoSPARK™ devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information.

Features
• Industry Standard D2-Pak package
• SCIS Energy = 500mJ at TJ = 25oC
• Logic Level Gate Drive

Applications
• Automotive Ignition Coil Driver Circuits
• Coil-On Plug Applications

 


Part Name(s) : 14N36GVL HGT1S14N36G3VL HGT1S14N36G3VLS HGTP14N36G3VL HGTP14N36G3VL9A HGT1S14N36G3VL9A HGT1S14N36G3VLS9A Fairchild
Fairchild Semiconductor
Description : 14A, 360V N-CHANNEL, Logic Level, Voltage Clamping IGBTs View

Description
This N-CHANNEL IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit.

Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175°C
• Ignition Energy Capable

Part Name(s) : 2PG011 Panasonic
Panasonic Corporation
Description : SILICON N-CHANNEL enhancement IGBT View

SILICON N-CHANNEL enhancement IGBT

For plasma display panel drive
For high speed switching circuits

Features
● Low collector-emitter saturation voltage: VCE(sat) < 2.5 V
● High-speed switching: tf = 185 ns (typ.)

Part Name(s) : 2SH14 Hitachi
Hitachi -> Renesas Electronics
Description : SILICON N-CHANNEL IGBT View

SILICON N-CHANNEL IGBT

Features
•  High speed switching
• Low on saturation voltage

Application
High speed power switching

Part Name(s) : RJK6085DPK-00-T0 RJP6085DPK Renesas
Renesas Electronics
Description : SILICON N CHANNEL IGBT High Speed Power Switching View

SILICON N CHANNEL IGBT High Speed Power Switching

Features
•  High speed switching
•  Low collector to emitter saturation voltage

Part Name(s) : RJH60C9DPD RJH60C9DPD-00-J2 Renesas
Renesas Electronics
Description : SILICON N CHANNEL IGBT Application: Inverter View

SILICON N CHANNEL IGBT Application: Inverter

Features
•  High breakdown-voltage
•  Low on-voltage
•  Built-in diode

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