datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

P/N + Description + Content Search

Search Word's :
Fairchild
Fairchild Semiconductor
Description : 2.5 A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing

Description
The FOD8318 is an advanced 2.5 A output current IGBT drive optocoupler capable of driving most 1200 V / 150 A IGBTs. It is ideally suited for fast-switching driving of power IGBTs and MOSFETs used in motor control inverter applications and high-performance power systems. It consists of an integrated gate drive optocoupler featuring low RDS(ON) CMOS transistors to drive the IGBT from rail to rail and an integrated high speed isolated feedback for fault sensing. The FOD8318 has an active Miller clamp fuction to shut off the IGBT during a high dv/dt situation without the need of a negative supply voltage. It offers critical protection features necessary for preventing fault conditions that lead to destructive thermal runaway of IGBTs.

Features
High noise immunity characterized by common mode rejection
– 35 kV / µs Minimum Common Mode Rejection (Vcm = 1500 Vpeak)
2.5 A peak output current driving capability for most 1200 V / 150 A IGBT
Optically isolated fault sensing feedback
Active Miller clamp to shut off the IGBT during high dv/dt without needing a negative supply voltage
“Soft” IGBT turn-off
Built-in IGBT protection
– Desaturation detection
– Under-voltage lock out (UVLO) protection
Wide supply voltage range from 15 V to 30 V
– Use of P-channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output)
3.3 V / 5 V, CMOS/TTL-compatible inputs
High Speed
– 500 ns max. propagation delay over full operating temperature range
Extended industrial temperate range, -40°C to 100°C temperature range
Safety and regulatory approvals
– UL1577, 4,243 VRMS for 1 min.
– DIN EN/IEC 60747-5-5,1,414 Vpeak working insulation voltage, 8000 Vpeak transient isolation voltage ratings
RDS(ON) of 1  (typ.) offers lower power dissipation
User configurable: inverting, non-inverting, auto-reset, auto-shutdown
8 mm creepage and clearance distances

Applications
Industrial inverter
Induction heating
Isolated IGBT drive

Part Name(s) : RJH3044
Hitachi
Hitachi -> Renesas Electronics
Description : silicon N channel IGBT, 360V, 30A

Description :
The RJH3044 is a silicon N channel IGBT. It has high speed power switching.

Features
(1) trench gate and thin wafer technology;
(2) high speed switching;
(3) low collector to emitter saturation voltage;
(4) low leak current;
(5) built-in fast recovery diode;
(6) isolated package.

Part Name(s) : ISL9V5036P3-F085
ON-Semiconductor
ON Semiconductor
Description : EcoSPARK® 500mJ, 360V, N-channel Ignition IGBT

General Description
The ISL9V5036P3_F085 is the next generation IGBT that offer outstanding SCIS capability in the TO-220 plastic package. This device is intended for use in automotive ignition circuit, specifically as coil driver. Internal diode provide voltage clamping without the need for external component.

Features
• Industry Standard TO-220 package
• SCIS Energy = 500mJ at TJ = 25°C
• Logic Level Gate Drive
• Qualified to AEC Q101
• RoHS Compliant

Applications
• Automotive Ignition Coil Driver Circuits
• Coil-On Plug Applications

Fairchild
Fairchild Semiconductor
Description : Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing, Active Miller Clamp, and Automatic Fault Reset

Description
The FOD8333 is an advanced 2.5 A output current IGBT drive optocoupler capable of driving medium-power IGBTs with ratings up to 1,200 V and 150 A. It is suited for fast-switching driving of power IGBTs and MOSFETs in motor-control inverter applications and high-performance power systems. The FOD8333 offers protection features necessary for preventing fault conditions that lead to destructive thermal runaway of IGBTs.

Features
■ Input LED Drive Facilitates Receiving Digitally Encoded Signals from PWM Output
■ Optically Isolated Fault-Sensing Feedback
■ Active Miller Clamp to Shut Off IGBT During High dv/dt without Negative Supply Voltage
■ High Noise Immunity Characterized by Common Mode Rejection – 35 kV/µs Minimum, VCM = 1500 VPEAK
■ 2.5 A Peak Output Current Driving Capability for Medium Power IGBT
    – P-channel MOSFETs at Output Stage Enable Output Voltage Swing Close to Supply Rail (Rail-to-Rail Output)
    – Wide Supply Voltage Range: 15 V to 30 V
■ Integrated IGBT Protection
    – Desaturation Detection
    – “Soft” IGBT Turn-Off
    – Automatic Fault Reset after Fixed Mute Time, Typically 33 µs
    – Under-Voltage Lockout (UVLO) with Hysteresis
■ Fast Switching Speed Over Full Operating Temperature Range
    – 250 ns Maximum Propagation Delay
    – 100 ns Maximum Pulse Width Distortion
■ Extended Industrial Temperate Range:
    – –40°C to 100°C
■ Safety and Regulatory Approvals
    – UL1577, 4,243 VRMS for 1 Minute
    – DIN-EN/IEC60747-5-5:
        1,414 VPEAK Working Insulation Voltage Rating
        8,000 VPEAK Transient Isolation Voltage Rating
■ 8 mm Creepage and Clearance Distances

Applications
■ AC and Brushless DC Motor Drive
■ Industrial Inverter
■ Uninterruptible Power Supply
■ Induction Heating
■ Isolated IGBT/Power MOSFET Gate Drive

ON-Semiconductor
ON Semiconductor
Description : Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing, Active Miller Clamp, and Automatic Fault Reset

Description
The FOD8333 is an advanced 2.5 A output current IGBT drive optocoupler capable of driving medium-power IGBTs with ratings up to 1,200 V and 150 A. It is suited for fast-switching driving of power IGBTs and MOSFETs in motor-control inverter applications and high-performance power systems. The FOD8333 offers protection features necessary for preventing fault conditions that lead to destructive thermal runaway of IGBTs.

Features
■ Input LED Drive Facilitates Receiving Digitally Encoded Signals from PWM Output
■ Optically Isolated Fault-Sensing Feedback
■ Active Miller Clamp to Shut Off IGBT During High dv/dt without Negative Supply Voltage
■ High Noise Immunity Characterized by Common Mode Rejection – 35 kV/µs Minimum, VCM = 1500 VPEAK
■ 2.5 A Peak Output Current Driving Capability for Medium Power IGBT
    – P-channel MOSFETs at Output Stage Enable Output Voltage Swing Close to Supply Rail (Rail-to-Rail Output)
    – Wide Supply Voltage Range: 15 V to 30 V
■ Integrated IGBT Protection
    – Desaturation Detection
    – “Soft” IGBT Turn-Off
    – Automatic Fault Reset after Fixed Mute Time, Typically 33 µs
    – Under-Voltage Lockout (UVLO) with Hysteresis
■ Fast Switching Speed Over Full Operating Temperature Range
    – 250 ns Maximum Propagation Delay
    – 100 ns Maximum Pulse Width Distortion
■ Extended Industrial Temperate Range:
    – –40°C to 100°C
■ Safety and Regulatory Approvals
    – UL1577, 4,243 VRMS for 1 Minute
    – DIN-EN/IEC60747-5-5:
        1,414 VPEAK Working Insulation Voltage Rating
        8,000 VPEAK Transient Isolation Voltage Rating
■ 8 mm Creepage and Clearance Distances

Applications
■ AC and Brushless DC Motor Drive
■ Industrial Inverter
■ Uninterruptible Power Supply
■ Induction Heating
■ Isolated IGBT/Power MOSFET Gate Drive

Description : 14A, 360V N-channel, Logic Level, Voltage Clamping IGBTs

Description
This N-channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit.

Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175°C
• Ignition Energy Capable

Description : 14A, 360V N-channel, Logic Level, Voltage Clamping IGBTs

Description
This N-channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit.

Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175°C
• Ignition Energy Capable

Description : IGBT Module Series for Advanced-NPC Circuits

Introduction
In recent years, initiatives to reduce CO2 emissions in order to protect the environment have been implemented in countries throughout the world. The shift to clean energy, such as to wind power and solar power, which does not rely on conventional fossil fuels, is be coming increasingly prominent.
The use of power electronics devices to conserve energy can be found in a wide variety of applications, from consumer electronics to electric railways, FA systems and the like. Moreover, power electronics are used not only in power-consuming applications, but their use has also spread to the fields of power generation, transmission and supply such as in uninter ruptible power supplies (UPS), wind power generators and solar power generators. In particular, multi-level inverters have been proposed as an efficient way to increase the power conversion efficiency of a UPS or power generation system(1), and neutral-point-clamped (NPC) inverters have been put into practical use. A 3-level inverter*1 having a simpler circuit configuration than this NPC inverter has also been proposed, but when configured with typical insulated gate bipolar transistor (IGBT) and diode, an increase in conduction loss and a high surge voltage due to the wiring inductance were problems.
Fuji Electric has developed circuit systems for in verters and converters, which are power electronics devices, and has contributed to energy conservation mainly in devices in the industrial field. Additionally, by adopting a custom low inductance package using a reverse-blocking IGBT(2) (RB-IGBT), a proprietarily developed power semiconductor, Fuji Electric has developed an IGBT module for use in advanced NPC (A-NPC) circuits that solves the aforementioned problems(3). A UPS that utilizes this module has been in troduced to the market.
Presently, Fuji Electric is aiming to expand its series of IGBT module for A-NPC circuits, and is developing an IGBT module for A-NPC circuits that in tegrates a three-phase A-NPC 3-level inverter circuit and a thermistor into a single package. This paper presents an overview of these efforts.

Part Name(s) : IRG4PC50FDPBF
IR
International Rectifier
Description : INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT

VCES = 600V
VCE(on) typ. = 1.45V
@VGE = 15V, IC = 39A

Benefits
• Generation -4 IGBT's offer highest efficiencies available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing
• Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's

Features
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-247AC package
• Lead-Free

 

Part Name(s) : G4BC30FD
IR
International Rectifier
Description : Fast CoPack IGBT

VCES= 600V
VCE(on) typ. =1.59V
@VGE= 15V, IC= 17A

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFRED™ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-220AB package

Benefits
• Generation -4 IGBT's offer highest efficiencies available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing
• Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's

12345678910 Next

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]