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Part Name(s) : 1SV147 Toshiba
Toshiba
Description : TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE View

TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE

fm radio band tuning applications.

• Low rs : rs = 0.3 Ω (Typ.)
• Small Pakcage

Part Name(s) : 1S2094 Toshiba
Toshiba
Description : VARIABLE CAPACITANCE DIODE View

SILICON EPITAXIAL PLANAR TYPE

VARIABLE CAPACITANCE DIODE

UHF, VHF AFC APPLICATIONS.

Part Name(s) : FMMV109 Zetex
Zetex => Diodes
Description : SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE View

SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE

Part Name(s) : FMMV3102 Zetex
Zetex => Diodes
Description : SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE View

SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE


Part Name(s) : FMMV105G Diodes
Diodes Incorporated.
Description : SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE View

SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE

PARTMARKING DETAILS FMMV105G – 4EZ

Part Name(s) : BBY40 Zetex
Zetex => Diodes
Description : SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE View

SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE

PARTMARKING DETAIL BBY40 – S2

Part Name(s) : FMMV105G Zetex
Zetex => Diodes
Description : SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE View

SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE

PARTMARKING DETAILS FMMV105G – 4EZ

Part Name(s) : BB535 Q62702-B580 Siemens
Siemens AG
Description : SILICON VARIABLE CAPACITANCE DIODE (For UHF and TV/TR tuners Large CAPACITANCE ratio / low series resistance) View

SILICON VARIABLE CAPACITANCE DIODE

• For UHF and TV/TR tuners
• Large CAPACITANCE ratio, low series resistance

Part Name(s) : 1T387 Sony
Sony Semiconductor
Description : VARIABLE CAPACITANCE DIODE View

Description
The 1T387 is a VARIABLE CAPACITANCE DIODE designed for electronic tuning of BS and CS tuners using a super miniature package (SMVC).

Features
• Super miniature package
• Low series resistance: 1.5Ω Max. (f = 470MHz)
• Large CAPACITANCE ratio: 14.6 Typ. (C1/C25)
• Small leakage current: 10nA Max. (VR = 25V)
CAPACITANCE deviation in a matching group: within 6%

Applications
Electronic tuning of BS and CS tuners

Structure
SILICON EPITAXIAL PLANAR TYPE DIODE

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