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Part Name(s) : ADR440A ADR440ARMZ ADR440ARMZ-REEL7 ADR440ARZ ADR440ARZ-REEL7 ADR440B ADR440BRZ ADR440BRZ-REEL7 ADR441A ADR441ARMZ ADR441ARMZ-REEL7 ADR441ARZ ADR441ARZ-REEL7 ADR441B ADR441BRZ ADR441BRZ-REEL7 ADR443A ADR443ARMZ ADR443ARMZ-REEL7 ADR443ARZ ADR443ARZ-REEL7 ADR443B ADR443BRZ ADR443BRZ-REEL7 ADR444A ADI
Analog Devices
Description : ULTRALOW NOISE, LDO XFET VOLTAGE REFERENCES WITH CURRENT SINK AND SOURCE View

GENERAL DESCRIPTION
The ADR44x series is a family of XFET® VOLTAGE REFERENCES featuring ULTRALOW NOISE, high accuracy, AND low temperature drift performance. Using Analog Devices, Inc., patented temperature drift curvature correction AND XFET (eXtra implanted junction FET) technology, VOLTAGE change vs. temperature nonlinearity in the ADR44x is greatly minimized.

FEATURES
ULTRALOW NOISE (0.1 Hz to 10 Hz)
ADR440: 1 μV p-p
ADR441: 1.2 μV p-p
ADR443: 1.4 μV p-p
ADR444: 1.8 μV p-p
ADR445: 2.25 μV p-p
Superb temperature coefficient
A grade: 10 ppm/°C
B grade: 3 ppm/°C
Low dropout operation: 500 mV
Input range: (VOUT+ 500 mV) to 18 V
High output SOURCE AND SINK CURRENT
+10 mA AND −5 mA, respectively
Wide temperature range: −40°C to +125°C


APPLICATIONS
Precision data acquisition systems
High resolution data converters
Battery-powered instrumentation
Portable medical instruments
Industrial process control systems
Precision instruments
Optical control circuits

Part Name(s) : ADR430 ADR430A ADR430AR ADR430AR-REEL7 ADR430ARM ADR430ARM-REEL7 ADR430ARMZ ADR430ARMZ-REEL7 ADR430ARZ ADR430ARZ-REEL7 ADR430B ADR430BR ADR430BR-REEL7 ADR430BRZ ADR430BRZ-REEL7 ADR431 ADR431A ADR431AR ADR431AR-REEL7 ADR431ARM ADR431ARM-REEL7 ADR431ARMZ ADR431ARMZ-REEL7 ADR431ARZ ADR431ARZ-REEL7 ADI
Analog Devices
Description : ULTRALOW NOISE XFET VOLTAGE REFERENCES WITH CURRENT SINK AND SOURCE CAPABILITY View

GENERAL DESCRIPTION
The ADR43x series is a family of XFET VOLTAGE REFERENCES featuring low NOISE, high accuracy, AND low temperature drift performance. Using ADI’s patented temperature drift curvature correction AND XFET (eXtra implanted junction FET) technology, the ADR43x’s VOLTAGE change versus temperature nonlinearity is minimized.

FEATURES
Low NOISE (0.1 Hz to 10 Hz): 3.5 µV p-p @ 2.5 V output
No external capacitor required
Low temperature coefficient
   A Grade: 10 ppm/°C max
   B Grade: 3 ppm/°C max
Load regulation: 15 ppm/mA
Line regulation: 20 ppm/V
Wide operating range
   ADR430: 4.1 V to 18 V
   ADR431: 4.5 V to 18 V
   ADR433: 5.0 V to 18 V
   ADR434: 6.1 V to 18 V
   ADR435: 7.0 V to 18 V
   ADR439: 6.5 V to 18 V
High output CURRENT: +30 mA/−20 mA
Wide temperature range: −40°C to +125°C

APPLICATIONS
Precision data acquisition systems
High resolution data converters
Medical instruments
Industrial process control systems
Optical control circuits
Precision instruments

Part Name(s) : ADR421AR-REEL ADR421BR-REEL ADI
Analog Devices
Description : Ultraprecision, Low NOISE, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET VOLTAGE REFERENCES View

GENERAL DESCRIPTION
The ADR42x are a series of ultraprecision, second generation eXtra implanted junction FET (XFET) VOLTAGE REFERENCES featuring low NOISE, high accuracy, AND excellent long-term stability in SOIC AND MSOP footprints.

FEATURES
Low NOISE (0.1 Hz to 10 Hz)
 ADR420: 1.75 μV p-p
 ADR421: 1.75 μV p-p
 ADR423: 2.0 μV p-p
 ADR425: 3.4 μV p-p
Low temperature coefficient: 3 ppm/°C
Long-term stability: 50 ppm/1000 hours
Load regulation: 70 ppm/mA
Line regulation: 35 ppm/V
Low hysteresis: 40 ppm typical
Wide operating range
 ADR420: 4 V to 18 V
 ADR421: 4.5 V to 18 V
 ADR423: 5 V to 18 V
 ADR425: 7 V to 18 V
Quiescent CURRENT: 0.5 mA maximum
High output CURRENT: 10 mA
Wide temperature range: −40°C to +125°C

APPLICATIONS
Precision data acquisition systems
High resolution converters
Battery-powered instrumentation
Portable medical instruments
Industrial process control systems
Precision instruments
Optical network control circuits

Part Name(s) : ADR360 ADR360A ADR360AUJZ-R2 ADR360AUJZ-REEL7 ADR360B ADR360BUJZ-R2 ADR360BUJZ-REEL7 ADR361 ADR361A ADR361AUJZ-R2 ADR361AUJZ-REEL7 ADR361B ADR361BUJZ-R2 ADR361BUJZ-REEL7 ADR363 ADR363A ADR363AUJZ-R2 ADR363AUJZ-REEL7 ADR363B ADR363BUJZ-R2 ADR363BUJZ-REEL7 ADR364 ADR364A ADR364AUJZ-R2 ADR364AUJZ-REEL7 ADI
Analog Devices
Description : Low Power, Low NOISE VOLTAGE REFERENCES WITH SINK/SOURCE CAPABILITY View

GENERAL DESCRIPTION
The ADR360/ADR361/ADR363/ADR364/ADR365/ADR366 are precision 2.048 V, 2.5 V, 3.0 V, 4.096 V, 5.0 V, AND 3.3 V bAND gap VOLTAGE REFERENCES that offer low power AND high precision in tiny footprints. Using patented temperature drift curvature correction techniques from Analog Devices, Inc., the ADR36x REFERENCES achieve a low temperature drift of 9 ppm/°C in a TSOT package.
The ADR36x family of micropower, low dropout VOLTAGE REFERENCES provides a stable output VOLTAGE from a minimum supply of 300 mV above the output. Their advanced design eliminates the need for external capacitors, which further reduces board space AND system cost. The combination of low power operation, small size, AND ease of use makes the ADR36x precision VOLTAGE REFERENCES ideally suited for battery-operated applications.

FEATURES
  Compact TSOT packages
  Low temperature coefficient
     B grade: 9 ppm/°C
     A grade: 25 ppm/°C
  Initial accuracy
     B grade: ±3 mV maximum
     A grade: ±6 mV maximum
  ULTRALOW output NOISE: 6.8 μV p-p (0.1 Hz to 10 Hz)
  Low dropout: 300 mV
  Low supply CURRENT: 190 μA maximum
  No external capacitor required
  Output CURRENT: +5 mA/−1 mA
  Wide temperature range: −40°C to +125°C
  Qualified for automotive applications

APPLICATIONS
  Battery-powered instruments
  Portable medical instruments
  Data acquisition systems
  Industrial process controls
  Automotive

 


Part Name(s) : UCC27517A UCC27517ADBVR UCC27517ADBVT TI
Texas Instruments
Description : Single-Channel High-Speed Low-Side Gate Driver WITH Negative Input VOLTAGE CAPABILITY (WITH 4-A Peak SOURCE AND SINK) View

Description
The UCC27517A single-channel, high-speed, low-side gate driver device is capable of effectively driving MOSFET AND IGBT power switches. Using a design that inherently minimizes shoot-through CURRENT, the UCC27517A is capable of sourcing AND SINKing high peak-CURRENT pulses into capacitive loads offering rail-to-rail drive CAPABILITY AND extremely small propagation delay typically 13 ns.

Features
• Low-Cost Gate-Driver Device Offering Superior
   Replacement of NPN AND PNP Discrete Solutions
• 4-A Peak-SOURCE AND SINK Symmetrical Drive
• Ability to HANDle Negative VOLTAGEs (-5 V) at Inputs
• Fast Propagation Delays (13-ns typical)
• Fast Rise AND Fall Times (9-ns AND 7-ns typical)
• 4.5 to 18-V Single-Supply Range
• Outputs Held Low During VDD UVLO (ensures glitch-free operation at power up AND power down)
• TTL AND CMOS Compatible Input-Logic Threshold (independent of supply VOLTAGE)
• Hysteretic-Logic Thresholds for High-NOISE Immunity
• Dual Input Design (choice of an inverting (IN- pin) or non-inverting (IN+ pin) driver configuration)
  – Unused Input Pin can be Used for Enable or Disable Function
• Output Held Low when Input Pins are Floating
• Input Pin Absolute Maximum VOLTAGE Levels Not Restricted by VDD Pin Bias Supply VOLTAGE
• Operating Temperature Range of –40°C to +140°C
• 5-Pin DBV (SOT-23) Package Option

 Applications
• Switch-Mode Power Supplies
• DC-to-DC Converters
• Companion Gate-Driver Devices for Digital-Power Controllers
• Solar Power, Motor Control, UPS
• Gate Driver for Emerging Wide BAND-Gap Power Devices (such as GaN)

 

Part Name(s) : UCC27517A-Q1 UCC27517AQDBVRQ1 TI
Texas Instruments
Description : Single-Channel High-Speed Low-Side Gate Driver WITH Negative Input VOLTAGE CAPABILITY (WITH 4-A Peak SOURCE AND SINK) View

3 Description
The UCC27517A-Q1 single-channel high-speed low-side gate-driver device effectively drives MOSFET AND IGBT power switches. WITH a design that inherently minimizes shoot-through CURRENT, the UCC27517A-Q1 SOURCEs AND SINKs high peak-CURRENT pulses into capacitive loads offering rail-to-rail drive CAPABILITY AND extremely small propagation delay typically 13 ns.

Features
• Qualified for Automotive Applications
• AEC-Q100 Qualified WITH the Following Results:
  – Device Automotive Qualified Grade 1: –40°C to 125°C Ambient Operating Temperature Range
  – Device HBM ESD Classification Level 2
  – Device CDM ESD Classification Level C6
• Low-Cost Gate-Driver Device Offering Superior Replacement of NPN AND PNP Discrete Solutions
• 4-A Peak-SOURCE AND SINK Symmetrical Drive
• Ability to HANDle Negative VOLTAGEs (–5 V) at Inputs
• Fast Propagation Delays (13-ns typical)
• Fast Rise AND Fall Times (9-ns AND 7-ns typical)
• 4.5 to 18-V Single-Supply Range
• Outputs Held Low During VDD UVLO (ensures glitch-free operation at power up AND power down)
• TTL AND CMOS Compatible Input-Logic Threshold (independent of supply VOLTAGE)
• Hysteretic-Logic Thresholds for High-NOISE Immunity
• Dual Input Design (choice of an inverting (IN– pin) or non-inverting (IN+ pin) driver configuration)
  – Unused Input Pin can be Used for Enable or Disable Function
• Output Held Low when Input Pins are Floating
• Input Pin Absolute Maximum VOLTAGE Levels Not Restricted by VDD Pin Bias Supply VOLTAGE
• Operating Temperature Range of –40°C to 140°C
• 5-Pin DBV (SOT-23) Package Option

Applications
• Automotive
• Switch-Mode Power Supplies
• DC-to-DC Converters
• Companion Gate-Driver Devices for Digital-Power Controllers
• Solar Power, Motor Control, UPS
• Gate Driver for Emerging Wide BAND-Gap Power Devices (such as GaN)

 

Part Name(s) : UCC27517A-Q1 UCC27517AQDBVRQ1 Texas-Instruments
Texas Instruments
Description : Single-Channel High-Speed Low-Side Gate Driver WITH Negative Input VOLTAGE CAPABILITY (WITH 4-A Peak SOURCE AND SINK) View

Description
The UCC27517A-Q1 single-channel high-speed low-side gate-driver device effectively drives MOSFET AND IGBT power switches. WITH a design that inherently minimizes shoot-through CURRENT, the UCC27517A-Q1 SOURCEs AND SINKs high peak-CURRENT pulses into capacitive loads offering rail-to-rail drive CAPABILITY AND extremely small propagation delay typically 13 ns.

Features
• Qualified for Automotive Applications
• AEC-Q100 Qualified WITH the Following Results:
  – Device Automotive Qualified Grade 1: –40°C to 125°C Ambient Operating Temperature Range
  – Device HBM ESD Classification Level 2
  – Device CDM ESD Classification Level C6
• Low-Cost Gate-Driver Device Offering Superior Replacement of NPN AND PNP Discrete Solutions
• 4-A Peak-SOURCE AND SINK Symmetrical Drive
• Ability to HANDle Negative VOLTAGEs (–5 V) at Inputs
• Fast Propagation Delays (13-ns typical)
• Fast Rise AND Fall Times (9-ns AND 7-ns typical)
• 4.5 to 18-V Single-Supply Range
• Outputs Held Low During VDD UVLO (ensures glitch-free operation at power up AND power down)
• TTL AND CMOS Compatible Input-Logic Threshold (independent of supply VOLTAGE)
• Hysteretic-Logic Thresholds for High-NOISE Immunity
• Dual Input Design (choice of an inverting (IN– pin) or non-inverting (IN+ pin) driver configuration)
  – Unused Input Pin can be Used for Enable or Disable Function
• Output Held Low when Input Pins are Floating
• Input Pin Absolute Maximum VOLTAGE Levels Not Restricted by VDD Pin Bias Supply VOLTAGE
• Operating Temperature Range of –40°C to 140°C
• 5-Pin DBV (SOT-23) Package Option

Applications
• Automotive
• Switch-Mode Power Supplies
• DC-to-DC Converters
• Companion Gate-Driver Devices for Digital-Power Controllers
• Solar Power, Motor Control, UPS
• Gate Driver for Emerging Wide BAND-Gap Power Devices (such as GaN)

 

Part Name(s) : BB11182 REG1118 REG1118-2.85 REG1118-2.85/2K5 REG1118-2.85/2K5G4 REG1118-2.85G4 TI
Texas Instruments
Description : 800mA Low Dropout Positive Regulator WITH CURRENT SOURCE AND SINK CAPABILITY View

DESCRIPTION
The REG1118-2.85 is a three-terminal VOLTAGE regulators capable of sourcing up to 800mA AND SINKing up to 400mA. The SINKing CAPABILITY is important in SCSI applications where active negation line drivers are used. The REG1118-2.85 is useful for making a 27-line Boulay terminator capable of interfacing WITH active negation drivers required in FAST-20 SCSI applications. The regulator has active CURRENT limits for both SINK AND SOURCE CURRENTs as well as internal thermal limiting.

FEATURES
SOURCES 800mA, SINKS 400mA
● 2.85V OUTPUT FOR SCSI ACTIVE
   NEGATION TERMINATION
● 1.3V max DROPOUT VOLTAGE AT
   IO = 800mA
● INTERNAL CURRENT LIMIT
● THERMAL OVERLOAD PROTECTION
● SOT-223 SURFACE MOUNT PACKAGE

APPLICATIONS
● SCSI-2 AND SCSI-3 DEVICES
● FAST-20 SCSI
● ACTIVE NEGATION SCSI TERMINATORS
● SUPPLY SPLITTER GROUND GENERATION

Part Name(s) : DS4412UR DS4412UT MaximIC
Maxim Integrated
Description : Dual-Channel, I2C Adjustable SINK/SOURCE CURRENT DAC View

General Description
The DS4412 contains two I2C adjustable-CURRENT DACs that are each capable of SINKing or sourcing CURRENT. Each output has 15 SINK AND 15 SOURCE settings that are programmed by I2C interface. The full-scale range AND step size of each output is determined by an external resistor that can adjust the output CURRENT over a 4:1 range.
The output pins, OUT0 AND OUT1, power-up in a high impedance state.

Features
♦ Two CURRENT DACs
♦ Full-Scale CURRENT 500µA to 2mA
♦ Full-Scale Range for Each DAC Determined by External Resistors
♦ 15 Settings Each for SINK AND SOURCE Modes
♦ I2C-Compatible Serial Interface
♦ Low Cost
♦ Small Package (8-Pin µSOP)
♦ -40°C to +85°C Temperature Range
♦ 2.7V to 5.5V Operation

Applications
  Power-Supply Adjustment
  Power-Supply Margining
  Adjustable CURRENT SINK or SOURCE

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