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Part Name(s) : 2SA1270 KEC
KEC
Description : SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS) View

SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)

Part Name(s) : 2SA1272 KEC
KEC
Description : SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS) View

SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)

Part Name(s) : 2SA1275 2SA1275O 2SA1275R 2SA1275Y A1275 A1275O A1275R A1275Y KEC
KEC
Description : SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS) View

SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)

Part Name(s) : RN4902FE Toshiba
Toshiba
Description : TRANSISTOR SILICON PNP NPN EPITAXIAL TYPE(PCT PROCESS) (BIAS RESISTOR BUILT-IN TRANSISTOR) View

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

• Two devices are incorporated into an Extreme-Super-Mini (6-pin) package.
• Incorporating a BIAS RESISTOR into a TRANSISTOR reduces parts count. 
  Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost.


Part Name(s) : RN4901FE Toshiba
Toshiba
Description : TOSHIBA TRANSISTOR SILICON PNP NPN EPITAXIAL TYPE (PCT PROCESS) (BIAS RESISTOR BUILT-IN TRANSISTOR) View

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.

• Two devices are incorporated into an Extreme-Super-Mini (6 pin) package.
• Incorporating a BIAS RESISTOR into a TRANSISTOR reduces parts count.
  Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost.

 

Part Name(s) : RN4904FE Toshiba
Toshiba
Description : TOSHIBA TRANSISTOR SILICON PNP NPN EPITAXIAL TYPE (PCT PROCESS) (BIAS RESISTOR BUILT-IN TRANSISTOR) View

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

• Two devices are incorporated into an Extreme-Super-Mini (6-pin) package.
• Incorporating a BIAS RESISTOR into a TRANSISTOR reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost.

 

Part Name(s) : RN2101FT RN2102FT RN2103FT RN2104FT RN2105FT RN2106FT Toshiba
Toshiba
Description : SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (BIAS RESISTOR BUILT-IN TRANSISTOR) TRANSISTOR View

Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.

High-density mount is possible because of devices housed in very thin TESM packages.
Incorporating a BIAS RESISTOR into a TRANSISTOR reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost.
Wide range of RESISTOR values are available to use in various circuit designs.
Complementary to RN1101FT~1106FT

Part Name(s) : RN4986FE Toshiba
Toshiba
Description : TOSHIBA TRANSISTOR SILICON NPN PNP EPITAXIAL TYPE (PCT PROCESS) (BIAS RESISTOR BUILT-IN TRANSISTOR) View

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.

 Two devices are incorporated into an Extreme-Super-Mini (6 pin) package.
 Incorporating a BIAS RESISTOR into a TRANSISTOR reduces parts count.
  Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost.

Part Name(s) : RN4901 RN4901 Toshiba
Toshiba
Description : TOSHIBA TRANSISTOR SILICON PNP/NPN EPITAXIAL TYPE (PCT PROCESS) (TRANSISTOR with BUILT-IN BIAS RESISTOR) View

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

● Includeing two devices in US6 (ultra super mini TYPE with 6 leads)
● With BUILT-IN BIAS RESISTORs
● Simplify circuit design
● Reduce a quantity of parts and manufacturing PROCESS

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