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Part Name(s) : 2N6342A 2N6343A 2N6344A 2N6345A 2N6346A 2N6347A 2N6348A 2N6349A NJSEMI
New Jersey Semiconductor
Description : SILICON BIDIRECTIONAL THYRISTORS

SILICON BIDIRECTIONAL THYRISTORS

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Part Name(s) : 2N6342 2N6343 2N6344 2N6345 2N6346 2N6347 2N6348 2N6349 NJSEMI
New Jersey Semiconductor
Description : Silicon BIDIRECTIONAL Triode THYRISTORS

Silicon BIDIRECTIONAL Triode THYRISTORS

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Part Name(s) : 2N6342 2N6346 2N6343 2N6347 2N6344 2N6348 2N6345 2N6349 DIGITRON
Digitron Semiconductors
Description : SILICON BIDIRECTIONAL TRIODE THYRISTORS

SILICON BIDIRECTIONAL TRIODE THYRISTORS

Available Non-RoHS (STANDARD) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

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Part Name(s) : MAC16 MAC16D MAC16M MAC16N Motorola
Motorola => Freescale
Description : TRIACS Silicon BIDIRECTIONAL THYRISTORS

TRIACS Silicon BIDIRECTIONAL THYRISTORS

Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.

• Blocking Voltage to 800 Volts
• On-State Current Rating of 15 Amperes RMS at 80°C
• Uniform Gate Trigger Currents in Three Modes
• High Immunity to dv/dt — 500 V/µs minimum at 125°C
• Minimizes Snubber Networks for Protection
• Industry STANDARD TO-220AB Package
• High Commutating di/dt — 9.0 A/ms minimum at 125°C

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Part Name(s) : BTB12-600TW3G ON-Semiconductor
ON Semiconductor
Description : Triacs Silicon BIDIRECTIONAL THYRISTORS

Triacs Silicon BIDIRECTIONAL THYRISTORS

Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.

Features
•Blocking Voltage to 600 V
•On-State Current Rating of 12 A RMS at 80°C
•Uniform Gate Trigger Currents in Three Quadrants
•High Immunity to dV/dt −10 V/s minimum at 125°C
•Minimizes Snubber Networks for Protection
•Industry STANDARD TO-220AB Package
•High Commutating dI/dt −1.75 A/ms minimum at 110°C
•These are Pb−Free Devices

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Part Name(s) : K0900E70 K0900E70AP K0900E70RP2 K0900G K0900GRP K0900S K0900SRP K1050E70 K1050E70AP K1050E70RP2 K1050G K1050GRP K1050S K1050SRP K1100E70 K1100E70AP K1100E70RP2 K1100G K1100GRP K1100S K1100SRP K1200E70 K1200E70AP K1200E70RP2 K1200G Littelfuse
Littelfuse, Inc
Description : THYRISTORS STANDARD BIDIRECTIONAL SIDACS

Description
The SIDAC is a silicon bilateral voltage triggered switch. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance region to a low on-state voltage. Conduction continues until the current is interrupted or drops below the minimum holding current of the device. SIDACS feature glass-passivated junctions to ensure a rugged and dependable device capable of withstanding harsh environments.

Features
• AC Circuit Oriented
• Triggering Voltage of 79V to 330V
• RoHS Compliant

Applications
Suitable for high voltage power supplies, natural gas igniters, high-pressure Sodium lamps, and Xenon flash ignition.
 

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Part Name(s) : MAC16HCD MAC16HCM MAC16HCN ONSEMI
ON Semiconductor
Description : Triacs Silicon BIDIRECTIONAL THYRISTORS

Triacs Silicon BIDIRECTIONAL THYRISTORS

Designed primarily for full-wave ac control applications, such as motor controls, heating controls or dimmers; or wherever full−wave, silicon gate−controlled devices are needed.

• High Commutating di/dt and High Immunity to dv/dt @ 125°C
• Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3
• Blocking Voltage to 800 Volts
• On–State Current Rating of 16 Amperes RMS at 80°C
• High Surge Current Capability — 150 Amperes
• Industry STANDARD TO–220AB Package for Ease of Design
• Glass Passivated Junctions for Reliability and Uniformity
• Device Marking: Logo, Device Type, e.g., MAC16HCD, Date Code

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Part Name(s) : BTA12-600CW3G BTA12-800CW3G ON-Semiconductor
ON Semiconductor
Description : Triacs Silicon BIDIRECTIONAL THYRISTORS

Triacs
Silicon BIDIRECTIONAL THYRISTORS

Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.

Features
• Blocking Voltage to 800 V
• On-State Current Rating of 12 A RMS at 25°C
• Uniform Gate Trigger Currents in Three Quadrants
• High Immunity to dV/dt − 1500 V/s minimum at 125°C
• Minimizes Snubber Networks for Protection
• Industry STANDARD TO-220AB Package
• High Commutating dI/dt − 1.5 A/ms minimum at 125°C
• Internally Isolated (2500 VRMS)
• These are Pb−Free Devices

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Part Name(s) : T2500BFP T2500DFP T2500FP T2500MFP T2500NFP Motorola
Motorola => Freescale
Description : Silicon BIDIRECTIONAL Tride THYRISTORS

ISOLATED TRIACs THYRISTORS 6 AMPERES RMS 200 thru 800 VOLTS

.. . designed primarily for full-waveac control applications, such as solid-state relays, motorcontrols,heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type THYRISTORS switch from a blockingto a conducting state for eitherpolarity of applied anode voltage with positive or negative gate triggering.

• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
• Small, Rugged, Isolated Construction for Low Thermal Resistance, High Heat Dissipation and Durability

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Part Name(s) : BTB12-600BW3 BTB12-600BW3G BTB12-800BW3 BTB12-800BW3G ON-Semiconductor
ON Semiconductor
Description : Triacs Silicon BIDIRECTIONAL THYRISTORS

Triacs Silicon BIDIRECTIONAL THYRISTORS

Designed for high performance full‐wave ac control applications where high noise immunity and high commutating di/dt are required.

Features
•Blocking Voltage to 800 V
•On‐State Current Rating of 12 Amperes RMS at 25°C
•Uniform Gate Trigger Currents in Three Quadrants
•High Immunity to dV/dt - 2000 V/s minimum at 125°C
•Minimizes Snubber Networks for Protection
•Industry STANDARD TO‐220AB Package
•High Commutating dI/dt - 4 A/ms minimum at 125°C
•These are Pb-Free Devices

 

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