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Part Name(s) : PTFA192401E PTFA192401EV4 PTFA192401F PTFA192401FV4 Infineon
Infineon Technologies
Description : THERMALLY-ENHANCED HIGH POWER RF LDMOS FETS 240 W, 1930 ? 1990 MHZ View

Description
The PTFA192401E and PTFA192401F are 240-watt LDMOS FETS intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHZ. Features include input and output matching,and THERMALLY-ENHANCED packages with slotted or earless flanges.  Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal peRFormance and superior reliability.

Features
• Pb-free, RoHS-compliant and THERMALLY-ENHANCED packages
• Broadband internal matching
• Typical two-carrier WCDMA peRFormance at 1960 MHZ, 30 V
- Average output POWER = 47.0 dBm
- Linear Gain = 16 dB
- Efficiency = 27.5%
- Intermodulation distortion = –35 dBc
- Adjacent channel POWER = –41 dBc
• Typical single-carrier WCDMA peRFormance at 1960 MHZ, 30 V, 3GPP signal, PAR = 8.5 dB
- Average output POWER = 49 dBm
- Linear Gain = 16 dB
- Efficiency = 33%
- Adjacent channel POWER = –33 dBc
• Typical CW peRFormance, 1960 MHZ, 30 V
- Output POWER at P–1dB = 240 W
- Efficiency = 54%
• Integrated ESD protection: Human Body Model, Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 5:1 VSWR @ 30 V, 240 W (CW) output POWER

Part Name(s) : PTF081301E PTF081301F Infineon
Infineon Technologies
Description : THERMALLY-ENHANCED HIGH POWER RF LDMOS FETS 130 W, 869 ? 960 MHZ View

Description
The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETS intended for EDGE and CDMA applications in the 869 to 960 MHZ bands. THERMALLY-ENHANCEDpackaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability.

Features
THERMALLY-ENHANCED packages
• Broadband internal matching
• Typical EDGE peRFormance
- Average output POWER = 65 W
- Gain = 18 dB
- Efficiency = 40%
• Typical CW peRFormance
- Output POWER at P–1dB = 150 W
- Gain = 17 dB
- Efficiency = 55%
• Integrated ESD protection: Human Body Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V, 130 W (CW) output POWER

 

Part Name(s) : PFM19030 PFM19030F PFM19030SM Cree
Cree, Inc
Description : 1930-1990 MHZ, 30W, 2-Stage POWER Module Enhancement-Mode Lateral MOSFETS View

This versatile PCS module provides excellent linearity and efficiency in a low-cost suRFace mount package. The PFM19030 includes two stages of amplification, along with internal sense FETS that are on the same silicon die as the RF devices. These thermally coupled sense FETS simplify the task of bias temperature compensation of the overall amplifier. The module includes RF input, interstage, and output matching elements. The source and load impedances required for optimum operation of the module are much HIGHer (and simpler to realize) than for unmatched Si LDMOS transistors of similar peRFormance.

• 28 dB Gain
• 30 Watts Peak Output POWER
• Internal Sense FETS (for improved bias control)
• IS95 CDMA PeRFormance 5 Watts Average Output Level 20% POWER Added Efficiency –49 dBc ACPR

Part Name(s) : 1920CD35 GHz-Technology
GHz Technology
Description : 35 Watts, 25 Volts, Class AB Personal 1930 ? 1990 MHZ View

GENERAL DESCRIPTION
The 1920CD35 is a COMMON EMITTER transistor capable of providing 35 Watts of Class AB, RF output POWER over the band 1930-1990 MHZ. This transistor is specifically designed for PERSONAL COMMUNICATIONS BASE STATION amplifier applications. It includes Input prematching and utilizes Gold metalization and HIGH VALUE EMITTER ballasting to provide HIGH reliability and supreme ruggedness.


Part Name(s) : 1920AB25 GHz-Technology
GHz Technology
Description : 25 Watts, 25 Volts, Class AB Personal 1930 - 1990 MHZ View

GENERAL DESCRIPTION
The 1920AB25 is a COMMON EMITTER transistor capable of providing 25 Watts of Class AB, RF output POWER over the band 1930-1990 MHZ. This transistor is specifically designed for PERSONAL COMMUNICATIONS BASE STATION amplifier applications. It includes Input prematching and utilizes Gold metalization and HIGH VALUE EMITTER ballasting to provide HIGH reliability and supreme ruggedness. .

Part Name(s) : MRF6S19060N MRF6S19060NBR1 MRF6S19060NR1 Freescale
Freescale Semiconductor
Description : 1930-1990 MHZ, 12 W AVG., 28 V 2 x N-CDMA LATERAL N-CHANNEL RF POWER MOSFETS View

RF POWER Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETS

Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHZ. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.

• Typical 2-Carrier N-CDMA PeRFormance: VDD = 28 Volts,
   IDQ = 610 mA, Pout = 12 Watts Avg., Full Frequency Band, IS-95 CDMA
   (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
   1.2288 MHZ. PAR = 9.8 dB @ 0.01% Probability on CCDF.
     POWER Gain — 16 dB
     Drain Efficiency — 26%
     IM3 @ 2.5 MHZ Offset — -37 dBc in 1.2288 MHZ Bandwidth
     ACPR @ 885 kHz Offset — -51 dBc in 30 kHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHZ, 60 Watts CW Output POWER

Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
• 200°C Capable Plastic Package
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

 

Part Name(s) : MW7IC18100GNR1 MW7IC18100NBR1 MW7IC18100NR1 Freescale
Freescale Semiconductor
Description : 1990 MHZ, 100 W, 28 V GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS View

The MW7IC18100N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2050 MHZ. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulations including GSM EDGE and CDMA.

Final Application
• Typical GSM PeRFormance: VDD = 28 Volts, IDQ1 = 180 mA, IDQ2 = 1000 mA,Pout = 100 Watts CW, 1805-1880 MHZ or 1930-1990 MHZ
  POWER Gain  30 dB
  POWER Added Efficiency  48%

GSM EDGE Application
• Typical GSM EDGE PeRFormance: VDD = 28 Volts, IDQ1 = 215 mA, IDQ2 =800 mA, Pout = 40 Watts Avg., 1805-1880 MHZ or 1930-1990 MHZ
   POWER Gain  31 dB
   POWER Added Efficiency   35%
   Spectral Regrowth @ 400 kHz Offset = -63 dBc
   Spectral Regrowth @ 600 kHz Offset = -80 dBc
   EVM  1.5% rms
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHZ, 100 Watts CW Output POWER
• Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 1 mW to 120 W CW Pout.

Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source Scattering Parameters
• On-Chip Matching (50 Ohm Input, DC Blocked)
• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Part Name(s) : XD010-24S-D2F XD010-24S-D2F Sirenza
Sirenza Microdevices => RFMD
Description : 1930-1990 MHZ Class A/AB 12W CDMA Driver Amplifier View

Product Description
Sirenza Microdevices’ XD010-24S-D2F 12W POWER module is a robust 2-stage Class A/AB amplifier module for use in the driver stages of CDMA RF POWER amplifiers. The POWER transistors are fabricated using Sirenza’s latest, HIGH peRFormance LDMOS process. This unit operates from a single voltage and has internal temperature compensation of the bias voltage to ensure consistant peRFormance over the full temperature range. It is internally matched to 50 ohms.

Product Features
• 50 Ω RF impedance
• 12W Output P1dB
• Single Supply Operation : Nominally 28V
HIGH Gain: 28 dB at 1960 MHZ
HIGH Efficiency: 26% at 1960 MHZ
• Advanced, XeMOS LDMOS II FETS
• Temperature Compensation

Applications
• Base Station PA driver
• Repeater
• CDMA
• GSM / EDGE

Part Name(s) : LET9045S ST-Microelectronics
STMicroelectronics
Description : RF POWER TRANSISTORS LDMOS Enhanced Technology in Plastic Package View

DESCRIPTION
The LET9045S is a common source N-Channel, enhancement-mode lateral Field-Effect RF POWER transistor. It is designed for HIGH gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. LET9045S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF POWER package, POWERSO-10RF. LET9045S’s superior linearity peRFormance makes it an ideal solution for base station applications.

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 45 W with 17 dB gain MIN @ 945 MHZ / 28V
• NEW RF PLASTIC PACKAGE
HIGH GAIN
• ESD PROTECTION
• AVAILABLE IN TAPE & REEL with TR SUFFIX

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