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Part Name(s) : PTF081301E PTF081301F Infineon
Infineon Technologies
Description : THERMALLY-ENHANCED HIGH POWER RF LDMOS FETS 130 W, 869 ? 960 MHZ View

Description
The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETS intended for EDGE and CDMA applications in the 869 to 960 MHZ bands. THERMALLY-ENHANCEDpackaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability.

Features
THERMALLY-ENHANCED packages
• Broadband internal matching
• Typical EDGE peRFormance
- Average output POWER = 65 W
- Gain = 18 dB
- Efficiency = 40%
• Typical CW peRFormance
- Output POWER at P–1dB = 150 W
- Gain = 17 dB
- Efficiency = 55%
• Integrated ESD protection: Human Body Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V, 130 W (CW) output POWER

 

Part Name(s) : PTFA192401E PTFA192401EV4 PTFA192401F PTFA192401FV4 Infineon
Infineon Technologies
Description : THERMALLY-ENHANCED HIGH POWER RF LDMOS FETS 240 W, 1930 ? 1990 MHZ View

Description
The PTFA192401E and PTFA192401F are 240-watt LDMOS FETS intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHZ. Features include input and output matching,and THERMALLY-ENHANCED packages with slotted or earless flanges.  Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal peRFormance and superior reliability.

Features
• Pb-free, RoHS-compliant and THERMALLY-ENHANCED packages
• Broadband internal matching
• Typical two-carrier WCDMA peRFormance at 1960 MHZ, 30 V
- Average output POWER = 47.0 dBm
- Linear Gain = 16 dB
- Efficiency = 27.5%
- Intermodulation distortion = –35 dBc
- Adjacent channel POWER = –41 dBc
• Typical single-carrier WCDMA peRFormance at 1960 MHZ, 30 V, 3GPP signal, PAR = 8.5 dB
- Average output POWER = 49 dBm
- Linear Gain = 16 dB
- Efficiency = 33%
- Adjacent channel POWER = –33 dBc
• Typical CW peRFormance, 1960 MHZ, 30 V
- Output POWER at P–1dB = 240 W
- Efficiency = 54%
• Integrated ESD protection: Human Body Model, Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 5:1 VSWR @ 30 V, 240 W (CW) output POWER

Part Name(s) : MHVIC915 MHVIC915R2/D MHVIC915R2 Motorola
Motorola => Freescale
Description : CDMA, GSM/GSM EDGE 746?960 MHZ, 15 W, 27 V RF LDMOS WIDEBAND INTEGRATED AMPLIFIER View

The RF Line
746–960 MHZ RF LDMOS Wideband Integrated POWER Amplifier

The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest HIGH voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi–stage structure. Its wideband On–Chip integral matching circuitry makes it usable from 746 to 960 MHZ. The linearity peRFormances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, and CDMA. The device is packaged in a PFP–16 flat pack package that provides excellent thermal peRFormance through a solderable backside contact.

• Typical CDMA PeRFormance: 869–894 MHZ, 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, 1–Carrier N–CDMA, IS–95 CDMA 9–Channel Forward
   Driver Application
      Output POWER — 23 dBm
      POWER Gain — 31 dB
      Adjacent Channel POWER Ratio —
         –60 dBc @ 750 kHz in a 30 kHz BW
         –66 dBc @ 1.98 MHZ in a 30 kHz BW
   Output Application
      Output POWER — 34 dBm
      PAE = 21%
      Adjacent Channel POWER Ratio —
         –50 dBc @ 750 kHz in a 30 kHz BW
• Typical GSM PeRFormance: 921–960 MHZ, 26 Volts
   Output POWER — 15 W P1dB
   POWER Gain — 30 dB @ P1dB
   Drain Efficiency = 56% @ P1dB
• On–Chip Matching (50 Ohm Input, >9 Ohm Output)
• On–Chip Current Mirror gm Sensing FET for Self Bias Application
• Integrated Temperature Compensation Capability
• Usable for SCPA and MCPA Architecture
• Integrated ESD Protection
• Available in Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.


Part Name(s) : BLF7G10L-250 BLF7G10LS-250 NXP
NXP Semiconductors.
Description : POWER LDMOS transistor View

General description
250 W LDMOS POWER transistor for base station applications at frequencies from 869 MHZ to 960 MHZ.

Features and benefits
■ Excellent ruggedness
HIGH efficiency
■ Low Rth providing excellent thermal stability
■ Designed for broadband operation (869 MHZ to 960 MHZ)
■ Lower output capacitance for improved peRFormance in Doherty applications
■ Designed for low memory effects providing excellent pre-distortability
■ Internally matched for ease of use (input and output)
■ Integrated ESD protection
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications
RF POWER amplifiers for W-CDMA base stations and multi carrier applications in the 869 MHZ to 960 MHZ frequency range

 


Part Name(s) : MHVIC915NR2 MHVIC915N Freescale
Freescale Semiconductor
Description : 746-960 MHZ, 15 W, 27 V SINGLE N-CDMA, GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER View

RF LDMOS Wideband Integrated POWER Amplifier

The MHVIC915NR2 wideband integrated circuit is designed with on-chip matching that makes it usable from 750 to 1000 MHZ. This multi- stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base station modulation formats.

Final Application
• Typical Single-Carrier N-CDMA PeRFormance: VDD = 27 Volts, IDQ1 =
   80 mA, IDQ2 = 120 mA, Pout = 34 dBm, Full Frequency Band (746 to
   960 MHZ), IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
      POWER Gain — 31 dB
      POWER Added Efficiency — 21%
      ACPR @ 750 kHz Offset — -50 dBc in 30 kHz Bandwidth
  
   Driver Applications
• Typical Single-Carrier N-CDMA PeRFormance: VDD = 27 Volts, IDQ1 = 80
   mA, IDQ2 = 120 mA, Pout = 23 dBm, Full Frequency Band (869-
   894 MHZ), IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13),
   Channel Bandwidth = 1.2288 MHZ. PAR = 9.8 dB @ 0.01%
   Probability on CCDF.
      POWER Gain — 31 dB
      POWER Added Efficiency — 21%
      ACPR @ 750 kHz Offset — -60 dBc in 30 kHz Bandwidth
      ACPR @ 1.98 MHZ Offset — -66 dBc in 30 kHz Bandwidth
• Typical GSM PeRFormance: VDD = 26 Volts, Pout = 15 W P1dB, Full
   Frequency Band (921-960 MHZ)
   POWER Gain — 30 dB @ P1dB
   POWER Added Efficiency = 56% @ P1dB
• Capable of Handling 3:1 VSWR, @ 27 Vdc, 880 MHZ, 15 Watts CW Output POWER
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• On-Chip Matching (50 Ohm Input, DC Blocked, >9 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
• On-Chip Current Mirror gm Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.


Part Name(s) : XD010-12S-D4F XD010-12S-D4FY RFMD
RF Micro Devices
Description : 869 MHZ to 894 MHZ CLASS AB 15 W POWER AMPLIFIER MODULE View

Product Description
RFMD’s XD010-12S-D4F is a 15 Watt, 2-Stage Class A/AB LDMOS POWER amplifier designed for use in the 869 MHZ to 894 MHZ frequency band. The module is internally matched to 50Ω and operates directly from 28 V making system integration very simple. Internal gate bias temperature compensation circuitry ensures consistent unit-to-unit performance over the full operating temperature range. The XD010-12S-D4FY offers a rugged class 3B HBM ESD rating (> 8000 V).

Features
■ 50Ω RF impedance, Fully Integrated Matching
■ 15 W Output P1dB
■ Single Supply Operation: Nominally 28 V
HIGH Gain: 32 dB at 880 MHZ
■ Internal Gate Bias Temperature Compensation
POWER Up/Down Control < 1μs
■ ESD Rating (HBM): Class 3B (8000 V)

Applications
■ Base Station PA Driver
■ Repeater
■ CDMA/WCDMA
■ GSM/EDGE

Part Name(s) : LET9002 ST-Microelectronics
STMicroelectronics
Description : RF POWER TRANSISTORS LDMOS Enhanced Technology in Plastic Package View

DESCRIPTION
The LET9002 is a common source N-Channel, enhancement-mode lateral Field-Effect RF POWER transistor designed for broadband commercial and industrial applications at frequencies up to 1000 MHZ. The LET9002 is designed for HIGH gain and broadband peRFormance operating in common source mode at 26 V. LET9002 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative leadless SMD plastic package, POWERFLAT™.
It is ideal for digital cellular BTS applications requiring HIGH linearity.

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 2 W with 17 dB gain @ 960 MHZ / 26 V
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION
• SUPPLIED IN TAPE & REEL OF 3K UNITS

Part Name(s) : PTB20095 Ericsson
Ericsson
Description : 15 Watts, 915?960 MHZ Cellular Radio RF POWER Transistor View

Description
The 20095 is a class AB, NPN, common emitter RF POWER transistor intended for 25 Vdc operation across the 915 to 960 MHZ frequency band. Rated at 15 watts minimum output POWER, it may be used for both CW and PEP applications. Ion implantation, nitride suRFace passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.

• 15 Watts, 915–960 MHZ
• Class AB Characteristics
• Specified 25 Volts, 960 MHZ Characteristics
    - Output POWER = 15 Watts
    - Collector Efficiency = 50% Min at 15 Watts
• Gold Metallization
• Silicon Nitride Passivated

Part Name(s) : LET9130 ST-Microelectronics
STMicroelectronics
Description : RF POWER TRANSISTORS LDMOS Enhanced Technology View

DESCRIPTION
The LET9130 is a common source N-Channel enhancement-mode lateral Field-Effect RF POWER transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9130 is designed for HIGH gain and broadband peRFormance operating in common source mode at 28 V. Its internal matching makes it ideal for base station applications requiring HIGH linearity.

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS

• IS-95 CDMA: 865-895 MHZ / 28 V
    POUT = 25 W
    EFF. = 29 %
• EDGE: 920-960 MHZ / 28 V
    POUT = 45 W
    EFF. = 38 %
• GSM: 920-960 MHZ / 28 V
    POUT = 135 W
    EFF. = 51 %
• EXCELLENT THERMAL STABILITY
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION

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