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Part Name(s) : 2SK1348 K1348 Toshiba
Toshiba
Description : FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(L2-π-MOS III)

FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(L2-π-MOS III)

High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications

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Part Name(s) : 2SK3127 K3127 Toshiba
Toshiba
Description : FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π-MOS VI)

FIELD EFFECT TRANSISTOR   SILICON N CHANNEL MOS TYPE (π-MOS VI)
Chopper Regulator, DC-DC Converter and Motor Drive Applications

• Low drain-source ON resistance: RDS (ON)= 9.5 mΩ(typ.)
• High forward transfer admittance: |Yfs| = 38 S (typ.)
• Low leakage current: IDSS= 100 μA (max) (VDS= 30 V)
• Enhancement-mode: Vth= 1.5 to 3.0 V (VDS= 10 V, ID= 1 mA)

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Part Name(s) : 2SK1358 K1358 Toshiba
Toshiba
Description : FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π-MOS II.5)

FIELD EFFECT TRANSISTOR
SILICON N CHANNEL MOS TYPE (π-MOS II.5)
High Speed, High Current DC-DC Converter,
Relay Drive and Motor Drive Applications

Features
• Low Drain-Source ON Resistance
   - RDS(ON) = 1.1Ω (Typ.)
• High Forward Transfer Admittance
   - Yfs = 4.0S (Typ.)
• Low Leakage Current
   - IDSS = 300µA (Max.) @ VDS = 720V
• Enhancement-Mode
   - Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA

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Part Name(s) : K12X60U TK12X60U Toshiba
Toshiba
Description : FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (DTMOSⅡ)

FIELD EFFECT TRANSISTOR  SILICON N CHANNEL MOS TYPE (DTMOSⅡ)
Switching Regulator Applications

•  Low drain-source ON resistance: RDS (ON)= 0.36Ω(typ.)
•  High forward transfer admittance: ⎪Yfs⎪= 7.0 S (typ.)
•  Low leakage current: IDSS= 100 μA (VDS= 600 V)
•  Enhancement-mode: Vth= 3.0~5.0 V (VDS= 10 V, ID= 1 mA)

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Part Name(s) : 2SK3132 Toshiba
Toshiba
Description : FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV)

FIELD EFFECT TRANSISTOR   SILICON N CHANNEL MOS TYPE (π−MOSV)
Chopper Regulator DC−DC Converter and Motor Drive Applications

Low drain−source ON resistance  : RDS (ON)= 0.07 Ω(typ.)
High forward transfer admittance  : |Yfs| = 33 S (typ.)
Low leakage current  : IDSS= 100 μA (max) (VDS= 500 V)
Enhancement mode  : Vth= 2.4 to 3.4 V (VDS= 10 V, ID= 1 mA)

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Part Name(s) : 2SK2745 K2745 Toshiba
Toshiba
Description : FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L²−π−MOSV)

FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L²−π−MOSV)
Chopper Regulator, DC−DC Converter and Motor Drive Applications

4-V gate drive
Low drain−source ON resistance  : RDS(ON)= 7.0 mΩ(typ.)
High forward transfer admittance  : |Yfs| = 50 S (typ.)
Low leakage current  : IDSS= 100 μA (max) (VDS= 50 V)
Enhancement mode  : Vth= 0.8 to 2.0 V (VDS= 10 V, ID= 1 mA)

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Part Name(s) : CPH6413 SANYO
SANYO -> Panasonic
Description : N-CHANNEL MOS-TYPE SILICON FIELD-EFFECT TRANSISTOR For ultra-high-speed switching

N-CHANNEL MOS-TYPE SILICON FIELD-EFFECT TRANSISTOR For ultra-high-speed switching

Features
• Low on-resistance.
• And ultra-high-speed switching.
• 2.5V drive.

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Part Name(s) : 2SK3565 K3565 Toshiba
Toshiba
Description : TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π-MOSIV)

Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.)
• High forward transfer admittance: |Yfs| = 4.5 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 720 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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Part Name(s) : K100F06K TK100F06K3 Toshiba
Toshiba
Description : TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (U-MOSIV)

Swiching Regulator, DC-DC Converter Applications
Motor Drive Applications

• Low drain-source ON resistance: RDS (ON) = 4.0mΩ (typ.)
• High forward transfer admittance: |Yfs| = 174 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)
• Enhancement-model: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

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Part Name(s) : 2SK3799 K3799 Toshiba
Toshiba
Description : TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL MOS TYPE (π-MOSIV)

Switching Regulator Applications

• Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)
• High forward transfer admittance: |Yfs| = 6.0 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
• Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

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