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FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(L2-π-MOS III)

High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications

FIELD EFFECT TRANSISTOR   SILICON N CHANNEL MOS TYPE (π-MOS VI)
Chopper Regulator, DC-DC Converter and Motor Drive Applications

• Low drain-source ON resistance: RDS (ON)= 9.5 mΩ(typ.)
• High forward transfer admittance: |Yfs| = 38 S (typ.)
• Low leakage current: IDSS= 100 μA (max) (VDS= 30 V)
• Enhancement-mode: Vth= 1.5 to 3.0 V (VDS= 10 V, ID= 1 mA)

FIELD EFFECT TRANSISTOR
SILICON N CHANNEL MOS TYPE (Ï€-MOS II.5)
High Speed, High Current DC-DC Converter,
Relay Drive and Motor Drive Applications

Features
• Low Drain-Source ON Resistance
   - RDS(ON) = 1.1Ω (Typ.)
• High Forward Transfer Admittance
   - Yfs = 4.0S (Typ.)
• Low Leakage Current
   - IDSS = 300µA (Max.) @ VDS = 720V
• Enhancement-Mode
   - Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA

FIELD EFFECT TRANSISTOR  SILICON N CHANNEL MOS TYPE (DTMOSâ…¡)
Switching Regulator Applications

•  Low drain-source ON resistance: RDS (ON)= 0.36Ω(typ.)
•  High forward transfer admittance: ⎪Yfs⎪= 7.0 S (typ.)
•  Low leakage current: IDSS= 100 μA (VDS= 600 V)
•  Enhancement-mode: Vth= 3.0~5.0 V (VDS= 10 V, ID= 1 mA)

FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L²−π−MOSV)
Chopper Regulator, DC−DC Converter and Motor Drive Applications

4-V gate drive
Low drain−source ON resistance  : RDS(ON)= 7.0 mΩ(typ.)
High forward transfer admittance  : |Yfs| = 50 S (typ.)
Low leakage current  : IDSS= 100 μA (max) (VDS= 50 V)
Enhancement mode  : Vth= 0.8 to 2.0 V (VDS= 10 V, ID= 1 mA)

N-CHANNEL MOS-TYPE SILICON FIELD-EFFECT TRANSISTOR For ultra-high-speed switching

Features
• Low on-resistance.
• And ultra-high-speed switching.
• 2.5V drive.

UHF BAND AMPLIFIER APPLICATION

(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment.

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FIELD EFFECT TRANSISTOR SILICON N CHANNELMOS TYPE
RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER

(Note)The TOSHIBA products listed inthis document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment.

  Output Power  : PO ≥7.5W
  Power Gain  : GP ≥11.7dB
  Drain Efficiency  : ηD ≥50%

N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR