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Part Name(s) : 2SK1348 K1348 Toshiba
Toshiba
Description : FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(L2-?-MOS III) View

FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(L2-π-MOS III)

High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications

Part Name(s) : 2SK3127 K3127 Toshiba
Toshiba
Description : FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (?-MOS VI) View

FIELD EFFECT TRANSISTOR   SILICON N CHANNEL MOS TYPE (π-MOS VI)
Chopper Regulator, DC-DC Converter and Motor Drive Applications

• Low drain-source ON resistance: RDS (ON)= 9.5 mΩ(typ.)
• High forward transfer admittance: |Yfs| = 38 S (typ.)
• Low leakage current: IDSS= 100 μA (max) (VDS= 30 V)
• Enhancement-mode: Vth= 1.5 to 3.0 V (VDS= 10 V, ID= 1 mA)

Part Name(s) : 2SK1358 K1358 Toshiba
Toshiba
Description : FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (?-MOS II.5) View

FIELD EFFECT TRANSISTOR
SILICON N CHANNEL MOS TYPE (π-MOS II.5)
High Speed, High Current DC-DC Converter,
Relay Drive and Motor Drive Applications

Features
• Low Drain-Source ON Resistance
   - RDS(ON) = 1.1Ω (Typ.)
• High Forward Transfer Admittance
   - Yfs = 4.0S (Typ.)
• Low Leakage Current
   - IDSS = 300µA (Max.) @ VDS = 720V
• Enhancement-Mode
   - Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA

Part Name(s) : K12X60U TK12X60U Toshiba
Toshiba
Description : FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (DTMOS?) View

FIELD EFFECT TRANSISTOR  SILICON N CHANNEL MOS TYPE (DTMOSⅡ)
Switching Regulator Applications

•  Low drain-source ON resistance: RDS (ON)= 0.36Ω(typ.)
•  High forward transfer admittance: ⎪Yfs⎪= 7.0 S (typ.)
•  Low leakage current: IDSS= 100 μA (VDS= 600 V)
•  Enhancement-mode: Vth= 3.0~5.0 V (VDS= 10 V, ID= 1 mA)


Part Name(s) : 2SK2745 K2745 Toshiba
Toshiba
Description : FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L???MOSV) View

FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L²−π−MOSV)
Chopper Regulator, DC−DC Converter and Motor Drive Applications

4-V gate drive
Low drain−source ON resistance  : RDS(ON)= 7.0 mΩ(typ.)
High forward transfer admittance  : |Yfs| = 50 S (typ.)
Low leakage current  : IDSS= 100 μA (max) (VDS= 50 V)
Enhancement mode  : Vth= 0.8 to 2.0 V (VDS= 10 V, ID= 1 mA)

Part Name(s) : CPH6413 SANYO
SANYO -> Panasonic
Description : N-CHANNEL MOS-TYPE SILICON FIELD-EFFECT TRANSISTOR For ultra-high-speed switching View

N-CHANNEL MOS-TYPE SILICON FIELD-EFFECT TRANSISTOR For ultra-high-speed switching

Features
• Low on-resistance.
• And ultra-high-speed switching.
• 2.5V drive.

Part Name(s) : 2SK2855 Toshiba
Toshiba
Description : TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE View

UHF BAND AMPLIFIER APPLICATION

(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment.

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Part Name(s) : 2SK3075 Toshiba
Toshiba
Description : FIELD EFFECT TRANSISTOR SILICON N CHANNELMOS TYPE View

FIELD EFFECT TRANSISTOR SILICON N CHANNELMOS TYPE
RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER

(Note)The TOSHIBA products listed inthis document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment.

  Output Power  : PO ≥7.5W
  Power Gain  : GP ≥11.7dB
  Drain Efficiency  : ηD ≥50%

Part Name(s) : K699 NEC
NEC => Renesas Technology
Description : N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR View

N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

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