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Part Name(s) : 3SK199
Toshiba
Toshiba
Description : TOSHIBA Field Effect Transistor Silicon N Channel DUAL GATE MOS Type

TOSHIBA Field Effect Transistor Silicon N Channel DUAL GATE MOS Type

TV TUNER, UHF RF AMPLIFIER APPLICATIONS

Part Name(s) : 3SK153
Toshiba
Toshiba
Description : TOSHIBA Field Effect Transistor Silicon N Channel DUAL GATE MOS Type

TOSHIBA Field Effect Transistor Silicon N Channel DUAL GATE MOS Type

TV TUNER, UHF RF AMPLIFIER APPLICATIONS
TV TUNER VHF WIDE BAND RF AMPLIFIER APPLICATIONS

Part Name(s) : 3SK259
Toshiba
Toshiba
Description : TOSHIBA Field Effect Transistor Silicon N Channel DUAL GATE MOS Type

TOSHIBA Field Effect Transistor Silicon N Channel DUAL GATE MOS Type

TV TUNER, UHF RF AMPLIFIER APPLICATIONS
TV TUNER VHF WIDE BAND RF AMPLIFIER APPLICATIONS

Part Name(s) : K2078 2SK2078
Toshiba
Toshiba
Description : Field Effect Transistor Silicon N Channel MOS Type

Field Effect Transistor

Silicon N Channel MOS Type (π-MOS II.5)

High Speed, High Current Switching Applications

Part Name(s) : 2SK1348 K1348
Toshiba
Toshiba
Description : Field Effect Transistor Silicon N Channel MOS Type(L2-π-MOS III)

Field Effect Transistor Silicon N Channel MOS Type(L2-π-MOS III)

High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications

Part Name(s) : 2SK2320 K2320
ETC2
Unspecified
Description : Field Effect Transistor Silicon N-Channel MOS Type

Field Effect Transistor Silicon N-Channel MOS Type

Part Name(s) : SK2508
Toshiba
Toshiba
Description : TOSHIBA Field EFFECDT Transistor Silicon N Channel MOS Type (π-MOS V)

TOSHIBA Field EFFECDT Transistor Silicon N Channel MOS Type (π-MOS V)

HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS
SWITCHING REGULATOR AND DC-DC CONVERTER AND MOTOR APPLICATIONS

Part Name(s) : 2SK3127 K3127
Toshiba
Toshiba
Description : Field Effect Transistor Silicon N Channel MOS Type (π-MOS VI)

Field Effect Transistor   Silicon N Channel MOS Type (π-MOS VI)
Chopper Regulator, DC-DC Converter and Motor Drive Applications

• Low drain-source ON resistance: RDS (ON)= 9.5 mΩ(typ.)
• High forward transfer admittance: |Yfs| = 38 S (typ.)
• Low leakage current: IDSS= 100 μA (max) (VDS= 30 V)
• Enhancement-mode: Vth= 1.5 to 3.0 V (VDS= 10 V, ID= 1 mA)

Part Name(s) : 3SK283
Toshiba
Toshiba
Description : TOSHIBA Field Effect Transistor GaAs N-Channel DUAL GATE MES Type

TOSHIBA Field Effect Transistor GaAs N-Channel DUAL GATE MES Type

TV TUNER, UHF RF AMPLIFIER APPLICATIONS

Part Name(s) : 2SK1358 K1358
Toshiba
Toshiba
Description : Field Effect Transistor Silicon N Channel MOS Type (π-MOS II.5)

Field Effect Transistor
Silicon N Channel MOS Type (π-MOS II.5)
High Speed, High Current DC-DC Converter,
Relay Drive and Motor Drive Applications

Features
• Low Drain-Source ON Resistance
   - RDS(ON) = 1.1Ω (Typ.)
• High Forward Transfer Admittance
   - Yfs = 4.0S (Typ.)
• Low Leakage Current
   - IDSS = 300µA (Max.) @ VDS = 720V
• Enhancement-Mode
   - Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA

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