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Description : Super-mini package regulator IC

The BAΟΟΟLBSG (the “ΟΟΟ” indicates the output voltage value) is a low-saturation series regulator IC employing the Super-mini mold package of the SMP5 (2916 package). Equipped with a power-saving function that reduces current consumption, it also offers outstanding ripple rejection and characteristics, and is ideal for cellular telephones and other.

Features
1) Internal output transistor (IO=150mA)
2) Internal temperature protection circuit
3) Power-saving function enables designs with low current consumption
4) High level of ripple rejection (R.R.=66dB)
5) SMP5 Super-mini package enables space-saving designs
6) Low I / O voltage differential (90mV Typ. at IO=50mA)

Applications
    Residential / industrial device power supplies for cellular telephone such as the CDMA and GSM, and for other portable.

Description : Super-mini package regulator IC

Super-mini package regulator IC

The BAΟΟΟLBSG (the ìΟΟΟî indicates the output voltage value) is a low-saturation series regulator IC employing the Super-mini mold package of the SMP5 (2916 package). Equipped with a power-saving function that reduces current consumption, it also offers outstanding ripple rejection and characteristics, and is ideal for cellular telephones and other.

Features
1) Internal output transistor (IO=150mA)
2) Internal temperature protection circuit
3) Power-saving function enables designs with low current consumption
4) High level of ripple rejection (R.R.=66dB)
5) SMP5 Super-mini package enables space-saving designs
6) Low I / O voltage differential (90mV Typ. at IO=50mA)

Applications
    Residential / industrial device power supplies for cellular telephone such as the CDMA and GSM, and for other portable.

Part Name(s) : 2SC5181 2SC5181-T1
NEC
NEC => Renesas Technology
Description : NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD package FOR LOW-NOISE MICROWAVE AMPLIFICATION

NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD package FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES
• Low current consumption and high gain
  |S21e|2= 10.5 dBTYP.@ VCE= 2 V, IC= 7 mA, f = 2 GHz
  |S21e|2= 9.0 dBTYP.@VCE= 1 V, IC= 5 mA, f = 2 GHz
• Ultra Super Mini-Mold package

NEC
NEC => Renesas Technology
Description : NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD package FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES
• Low Noise
• NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
• NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• Super Mini-Mold package EIAJ: SC-70

Part Name(s) : 2SC5186 2SC5186-T1
NEC
NEC => Renesas Technology
Description : NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD package FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES
• Low Noise
    NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
    NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• Ultra Super Mini-Mold package

Part Name(s) : 2SC4571-T2
NEC
NEC => Renesas Technology
Description : NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

DESCRIPTION
The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX.
It is suitable for a high density surface mount  assembly since the transistor has been applied super mini mold package.

FEATURES
• High fT: 5.0 GHz TYP. (@ VCE= 5 V, IC= 5 mA, f = 1 GHz)
• Low Cob: 0.9 pF TYP. (@ VCB= 5 V, IE= 0, f = 1 MHz)
• Super Mini Mold package. (EIAJ : SC-70)

Isahaya
Isahaya Electronics
Description : FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE (Super mini type)

DESCRIPTION
2SC4154 is a super mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application.
Complementary with ISA1602AM1.

FEATURE
● Small collector to emitter saturation voltage.
    VCE(sat)=0.3V max(@Ic=100mA,IB=10mA)
● Excellent linearity of DC forward gain.
● Super mini package for easy mounting

 

Part Name(s) : 2SA1530A
Isahaya
Isahaya Electronics
Description : FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Ultra super mini type)

DESCRIPTION
2SA1530A is a super mini package resin sealed silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
.

FEATURE
● Small collector to emitter saturation voltage.
    VCE(sat)=-0.3Vmax(@Ic=-100mA、IB=-10mA)
● Excellent linearity of DC forward gain.
● Super mini package for easy mounting

APPLICATION
    For Hybrid IC,small type machine low frequency voltage Amplify application.

Part Name(s) : 2SC5005-T1
NEC
NEC => Renesas Technology
Description : NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION
The 2SC5005 is a low supply voltage transistor designed for UHF OSC/MIX.
It is suitable for a high density surface mount assembly since the transistor has been applied ultra super mini mold package.

FEATURES
• High fT : 5.5 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz)
• Low Cre : 0.7 pF TYP. (@ VCB = 5 V, IE = 0, f = 1 MHz)
• Ultra Super Mini Mold package. (1.6 mm × 0.8 mm)

NEC
NEC => Renesas Technology
Description : NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD package FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES
• Low Noise
    NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
    NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• Super Mini-Mold package

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