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Part Name(s) : BFW93 Q62702-F365
Siemens
Siemens AG
Description : NPN Silicon RF Broadband Transistor

NPN Silicon RF Broadband Transistor

BFW93 is an epitaxial NPN Silicon Planar RF Transistor in a plastic package of low capacitance, similar to TO 119 (50 B 3 DIN 41867). The transisor is particularly suitable for use as RF amplifiers up to the GHz range.

Part Name(s) : BF507
Siemens
Siemens AG
Description : NPN Silicon RF Transistor

NPN Silicon RF Transistor

BF 507 is an NPN Silicon Planar RF Transistor in TO 92 plastic package (10 A 3 DIN 41686).
The Transistor is particularly intended for use in VHF amplifiers, VHF mixers and VHF/UHF oscillators.

Part Name(s) : BF505 Q62702-F573
Siemens
Siemens AG
Description : NPN Silicon RF Transistor

NPN Silicon RF Transistor

BF 505 is an NPN Silicon Planar RF Transistor in TO 92 plastic package (10 A 3 DIN 41868).
The Transistor is particularly intended for use in VHF amplifiers in common emitter configuration, VHF mixers and VHF/UHF oscillators.

Part Name(s) : BFR90A
Temic
Temic Semiconductors
Description : Silicon NPN Planar RF Transistor

Silicon NPN Planar RF Transistor

Features
● High power gain
● Low noise figure
● High transition frequency

Applications
   RF-amplifier up to GHz range specially for wide band antenna amplifier.

Part Name(s) : BFR34A
Siemens
Siemens AG
Description : NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers

NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers

BFR 34 A is an epitaxial NPN Silicon Planar RF Transistor in a plastic package similar to TO 119 (50 B 3 DIN 41867) intended for use in RF amplifiers up to the GHz rnage, e.g. for low-noise input stages, broadband antenna amplifiers and oscillators.

Part Name(s) : SC1968 2SC1968 C1968
Mitsumi
Mitsumi
Description : MITSUBISHI RF POWER Transistor NPN EPITAXIAL Planar TYPE

DESCRIPTION
2SC1968 is a Silicon NPN epitaxial Planar type Transistor designed for RF power amplifiers on UHF band mobile radio applications.

Part Name(s) : 2SC1966
Mitsubishi
MITSUBISHI ELECTRIC
Description : MITSUBISHI RF POWER Transistor NPN EPITAXIAL Planar TYPE

DESCRIPTION
2SC1966 is a Silicon NPN epitaxial Planar type Transistor designed for RF power amplifiers on UHF band mobile radio applications.

Part Name(s) : 2SC1967
Mitsubishi
MITSUBISHI ELECTRIC
Description : MITSUBISHI RF POWER Transistor NPN EPITAXIAL Planar TYPE

DESCRIPTION
2SC1967 is a Silicon NPN epitaxial Planar type Transistor designed for RF power amplifiers on UHF band mobile radio applications.

Part Name(s) : 2SC2237
Mitsubishi
MITSUBISHI ELECTRIC
Description : MITSUBISHI RF POWER Transistor NPN EPITAXIAL Planar TYPE

DESCRIPTION
2SC2237 is a Silicon NPN epitaxial Planar type Transistor designed for RF power amplifiers in VHF band mobile radio applications.

Part Name(s) : 2SC1968 C1968
Mitsubishi
MITSUBISHI ELECTRIC
Description : MITSUBISHI RF POWER Transistor NPN EPITAXIAL Planar TYPE

DESCRIPTION
2SC1968 is a Silicon NPN epitaxial Planar type Transistor designed for RF power amplifiers on UHF band mobile radio applications.

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