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Part Name(s) : 2SK296 K296
Hitachi
Hitachi -> Renesas Electronics
Description : Silicon N-Channel MOS FET High speed power switching

Silicon N-Channel MOS FET High speed power switching

Part Name(s) : 2SK681 2SK681A
NEC
NEC => Renesas Technology
Description : N-Channel MOS FET FOR High-speed switching

N-Channel MOS FET FOR High-speed switching

The 2SK681A, N-Channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power source.
The MOS FET has excellent switching characteristic and is suitable for use as a High-speed switching device in digital circuits.

Hitachi
Hitachi -> Renesas Electronics
Description : Silicon N-Channel MOS FET High speed power switching

Silicon N-Channel MOS FET High speed power switching

Part Name(s) : 2SK383
Hitachi
Hitachi -> Renesas Electronics
Description : Silicon N-Channel MOS FET High speed power switching

Silicon N-Channel MOS FET

High speed power switching

Hitachi
Hitachi -> Renesas Electronics
Description : Silicon N-Channel MOS FET High speed switching

Silicon N-Channel MOS FET High speed switching

Part Name(s) : 2SK2928
Hitachi
Hitachi -> Renesas Electronics
Description : Silicon N Channel MOS FET High speed power switching

Silicon N Channel MOS FET High speed power switching

Features
•  Low on-resistance
    RDS(on)= 0.040Ω typ.
•  4V gate drive devices.
•  High speed switching

Part Name(s) : 2SK2927 K2927
Hitachi
Hitachi -> Renesas Electronics
Description : Silicon N Channel MOS FET High speed power switching

Silicon N Channel MOS FET High speed power switching

Features
•  Low on-resistance
   RDS=0.055 Ω typ.
•  High speed switching
•  4V gate drive device can be driven from 5V source

Hitachi
Hitachi -> Renesas Electronics
Description : Silicon N Channel MOS FET High speed power switching

Silicon N Channel MOS FET High speed power switching

Features
•  Low on-resistance
    RDS =35mΩ typ.
•  High speed switching
•  4V gate drive device can be driven from 5V source

Hitachi
Hitachi -> Renesas Electronics
Description : Silicon N Channel MOS FET High speed power switching

Silicon N Channel MOS FET High speed power switching

Features
•  Low on-resistance
    RDS(on)= 0.042Ω typ.
•  4V gate drive devices.
•  High speed switching

Hitachi
Hitachi -> Renesas Electronics
Description : Silicon N Channel MOS FET High speed power switching

Silicon N Channel MOS FET
High speed power switching

Features
•  Low on-resistance
   RDS= 15 mΩ typ.
•  High speed switching
•  4V gate drive device can be driven from 5V source

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