Silicon N-Channel MOS FET High speed power switching
N-Channel MOS FET FOR High-speed switching
The 2SK681A, N-Channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power source.
The MOS FET has excellent switching characteristic and is suitable for use as a High-speed switching device in digital circuits.
Silicon N-Channel MOS FET High speed power switching
Silicon N-Channel MOS FET
High speed power switching
Silicon N-Channel MOS FET High speed switching
Silicon N Channel MOS FET High speed power switching
Features
• Low on-resistance
RDS(on)= 0.040Ω typ.
• 4V gate drive devices.
• High speed switching
Silicon N Channel MOS FET High speed power switching
Features
• Low on-resistance
RDS=0.055 Ω typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Silicon N Channel MOS FET High speed power switching
Features
• Low on-resistance
RDS =35mΩ typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Silicon N Channel MOS FET High speed power switching
Features
• Low on-resistance
RDS(on)= 0.042Ω typ.
• 4V gate drive devices.
• High speed switching
Silicon N Channel MOS FET
High speed power switching
Features
• Low on-resistance
RDS= 15 mΩ typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
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