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Part Name(s) : 2SJ174	Hitachi -> Renesas Electronics
Description : SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING	View
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

Part Name(s) : 2SK296 K296	Hitachi -> Renesas Electronics
Description : SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING	View
SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

Part Name(s) : 2SK2927 K2927	Hitachi -> Renesas Electronics
Description : SILICON N Channel MOS FET HIGH SPEED POWER SWITCHING	View
SILICON N Channel MOS FET HIGH SPEED POWER SWITCHING Features • Low on-resistance RDS=0.055 Ω typ. • HIGH SPEED SWITCHING • 4V gate drive device can be driven from 5V source

Part Name(s) : 2SK2928	Hitachi -> Renesas Electronics
Description : SILICON N Channel MOS FET HIGH SPEED POWER SWITCHING	View
SILICON N Channel MOS FET HIGH SPEED POWER SWITCHING Features • Low on-resistance RDS(on)= 0.040Ω typ. • 4V gate drive devices. • HIGH SPEED SWITCHING

Part Name(s) : 2SK3210 2SK3210L 2SK3210S 2SK3210STL	Renesas Electronics
Description : SILICON N Channel MOS FET HIGH SPEED POWER SWITCHING	View
SILICON N Channel MOS FET HIGH SPEED POWER SWITCHING Features • Low on-resistance RDS= 40 mΩtyp. • HIGH SPEED SWITCHING • 4 V gate drive device can be driven from 5 V source

Part Name(s) : 2SK2912 2SK2912L 2SK2912S	Hitachi -> Renesas Electronics
Description : SILICON N Channel MOS FET HIGH SPEED POWER SWITCHING	View
SILICON N Channel MOS FET HIGH SPEED POWER SWITCHING Features • Low on-resistance RDS= 15 mΩ typ. • HIGH SPEED SWITCHING • 4V gate drive device can be driven from 5V source

Part Name(s) : 2SK2926 2SK2926L 2SK2926S	Hitachi -> Renesas Electronics
Description : SILICON N Channel MOS FET HIGH SPEED POWER SWITCHING	View
SILICON N Channel MOS FET HIGH SPEED POWER SWITCHING Features • Low on-resistance RDS(on)= 0.042Ω typ. • 4V gate drive devices. • HIGH SPEED SWITCHING

Part Name(s) : 2SK2553 2SK2553L 2SK2553S	Hitachi -> Renesas Electronics
Description : SILICON N Channel MOS FET HIGH SPEED POWER SWITCHING	View
SILICON N Channel MOS FET HIGH SPEED POWER SWITCHING Features • Low on-resistance • RDS(on)= 7 mΩtyp. • HIGH SPEED SWITCHING • 4 V gate drive device can be driven from 5 V source Application HIGH SPEED POWER SWITCHING

Part Name(s) : J180	NEC => Renesas Technology
Description : P-Channel MOS FET / HIGH-SPEED SWITCHING	View
The 2SJ180, P-channel vertical type MOS FET, is a SWITCHING device which can be driven directly by the output of ICs having a 5V POWER source. As the MOS FET has low on-state resistance and excellent SWITCHING characteristtics, it is suitable for driving actuators such as motors, relays, and solenoids.

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