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Part Name(s) : 2SJ174 Hitachi
Hitachi -> Renesas Electronics
Description : SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING View

SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

Part Name(s) : 2SK296 K296 Hitachi
Hitachi -> Renesas Electronics
Description : SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING View

SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

Part Name(s) : 2SK2927 K2927 Hitachi
Hitachi -> Renesas Electronics
Description : SILICON N Channel MOS FET HIGH SPEED POWER SWITCHING View

SILICON N Channel MOS FET HIGH SPEED POWER SWITCHING

Features
•  Low on-resistance
   RDS=0.055 Ω typ.
•  HIGH SPEED SWITCHING
•  4V gate drive device can be driven from 5V source

Part Name(s) : 2SK2928 Hitachi
Hitachi -> Renesas Electronics
Description : SILICON N Channel MOS FET HIGH SPEED POWER SWITCHING View

SILICON N Channel MOS FET HIGH SPEED POWER SWITCHING

Features
•  Low on-resistance
    RDS(on)= 0.040Ω typ.
•  4V gate drive devices.
•  HIGH SPEED SWITCHING


Part Name(s) : 2SK3210 2SK3210L 2SK3210S 2SK3210STL Renesas
Renesas Electronics
Description : SILICON N Channel MOS FET HIGH SPEED POWER SWITCHING View

SILICON N Channel MOS FET HIGH SPEED POWER SWITCHING

Features
•  Low on-resistance
    RDS= 40 mΩtyp.
•  HIGH SPEED SWITCHING
•  4 V gate drive device can be driven from 5 V source

Part Name(s) : 2SK2912 2SK2912L 2SK2912S Hitachi
Hitachi -> Renesas Electronics
Description : SILICON N Channel MOS FET HIGH SPEED POWER SWITCHING View

SILICON N Channel MOS FET
HIGH SPEED POWER SWITCHING

Features
•  Low on-resistance
   RDS= 15 mΩ typ.
•  HIGH SPEED SWITCHING
•  4V gate drive device can be driven from 5V source

Part Name(s) : 2SK2926 2SK2926L 2SK2926S Hitachi
Hitachi -> Renesas Electronics
Description : SILICON N Channel MOS FET HIGH SPEED POWER SWITCHING View

SILICON N Channel MOS FET HIGH SPEED POWER SWITCHING

Features
•  Low on-resistance
    RDS(on)= 0.042Ω typ.
•  4V gate drive devices.
•  HIGH SPEED SWITCHING

Part Name(s) : 2SK2553 2SK2553L 2SK2553S Hitachi
Hitachi -> Renesas Electronics
Description : SILICON N Channel MOS FET HIGH SPEED POWER SWITCHING View

SILICON N Channel MOS FET
HIGH SPEED POWER SWITCHING

Features
•  Low on-resistance
•  RDS(on)= 7 mΩtyp.
•  HIGH SPEED SWITCHING
•  4 V gate drive device can be driven from 5 V source

Application
HIGH SPEED POWER SWITCHING

Part Name(s) : J180 NEC
NEC => Renesas Technology
Description : P-Channel MOS FET / HIGH-SPEED SWITCHING View

The 2SJ180, P-channel vertical type MOS FET, is a SWITCHING device which can be driven directly by the output of ICs having a 5V POWER source.

 

As the MOS FET has low on-state resistance and excellent SWITCHING characteristtics, it is suitable for driving actuators such as motors, relays, and solenoids.

 

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