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Part Name(s) : EN25S10 EN25S10-75GIP EN25S10-75XIP Eon
Eon Silicon Solution Inc.
Description : 1 Megabit 1.8V Serial Flash Memory with 4KByte Uniform Sector View

GENERAL DESCRIPTION
The EN25S10 is a 1 Megabit (128K-byte) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The Memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction.
The EN25S10 is designed to allow either single Sector/Block at a time or full chip Erase operation. The EN25S10 can be configured to protect part of the Memory as the software protected mode. The device can sustain a minimum of 100K program/Erase cycles on each Sector or block.

FEATURES
• Single power supply operation
   - Full voltage range: 1.65-1.95 volt
Serial Interface Architecture
   - SPI Compatible: Mode 0 and Mode 3
• 1 M-bit Serial Flash
   - 1 M-bit/128 K-byte/512 pages
   - 256 bytes per programmable page
• High performance
   - 75MHz clock rate
• Low power consumption
   - 7 mA typical active current
   - 1 μA typical power down current
• Uniform Sector Architecture:
   - 32 Sectors of 4-Kbyte
   - 4 blocks of 32-Kbyte
   - Any Sector or block can be Erased individually
• Software and Hardware Write Protection:
   - Block Protect Bits are default set to “1” at Power-up
   - Write Protect all or portion of Memory via software
   - Enable/Disable protection with WP# pin
• High performance program/Erase speed
   - Page program time: 1.5ms typical
   - Sector Erase time: 90ms typical
   - Block Erase time 300ms typical
   - Chip Erase time: 1 seconds typical
• Lockable 256 byte OTP security Sector
• Minimum 100K endurance cycle
• Package Options
   - 8 pins SOP 150mil body width
   - 8 contact USON 2x3 mm
   - All Pb-free packages are RoHS compliant
• Industrial temperature Range

 

Part Name(s) : EN25S20 EN25S20-75GIP EN25S20-75XIP EN25S20-75WIP Eon
Eon Silicon Solution Inc.
Description : 2 Megabit 1.8V Serial Flash Memory with 4KByte Uniform Sector View

GENERAL DESCRIPTION
The EN25S20 is a 2 Megabit (256K-byte) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The Memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction.

FEATURES
• Single power supply operation
    - Full voltage range: 1.65-1.95 volt
Serial Interface Architecture
    - SPI Compatible: Mode 0 and Mode 3
• 2 M-bit Serial Flash
    - 2 M-bit/256 K-byte/1024 pages
    - 256 bytes per programmable page
• High performance
    - 75MHz clock rate
• Low power consumption
    - 7 mA typical active current
    - 1 μA typical power down current
• Uniform Sector Architecture:
    - 64 Sectors of 4-Kbyte
    - 4 blocks of 64-Kbyte
    - Any Sector or block can be Erased individually
• Software and Hardware Write Protection:
    - Block Protect Bits are default set to “1” at Power-up
    - Write Protect all or portion of Memory via software
    - Enable/Disable protection with WP# pin
• High performance program/Erase speed
    - Page program time: 1.5ms typical
    - Sector Erase time: 90ms typical
    - Block Erase time 500ms typical
    - Chip Erase time: 2 seconds typical
• Lockable 256 byte OTP security Sector
• Minimum 100K endurance cycle
• Package Options
    - 8 pins SOP 150mil body width
    - 8 contact USON 2x3 mm
    - 8 contact VDFN 5x6mm
    - All Pb-free packages are RoHS compliant
• Industrial temperature Range

Part Name(s) : EN25S80-75GI EN25S80-75HI EN25S80-75HIP EN25S80-75WI Eon
Eon Silicon Solution Inc.
Description : 8 Megabit 1.8V Serial Flash Memory with 4KByte Uniform Sector View

GENERAL DESCRIPTION
The EN25S80 is an 8 Megabit (1024K-byte) Serial Flash Memory, with advanced write protection mechanisms. The EN25S80 supports the standard Serial Peripheral Interface (SPI), and a high performance Dual output as well as Dual I/O using SPI pins: Serial Clock, Chip Select, Serial DQ0(DI) and DQ1(DO). SPI clock frequencies of up to 50MHz are supported allowing equivalent clock rates of 100MHz for Dual Output when using the Dual Output Fast Read instructions. The Memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction.

FEATURES
• Single power supply operation
    - Full voltage range: 1.65-1.95 volt
Serial Interface Architecture
    - SPI Compatible: Mode 0 and Mode 3
• 8 M-bit Serial Flash
    - 8 M-bit/1024 K-byte/4096 pages
    - 256 bytes per programmable page
• Standard or Dual SPI
    - Standard SPI: CLK, CS#, DI, DO, WP#, HOLD#
    - Dual SPI: CLK, CS#, DQ0, DQ1, WP#, HOLD#
• High performance
    - 75MHz clock rate for one data bit
    - 50MHz clock rate for two data bits
• Low power consumption
    - 7 mA typical active current
    - 1 μA typical power down current
• Uniform Sector Architecture:
    - 256 Sectors of 4-Kbyte
    - 16 blocks of 64-Kbyte
    - Any Sector or block can be Erased individually
• Software and Hardware Write Protection:
    - Write Protect all or portion of Memory via software
    - Enable/Disable protection with WP# pin
• High performance program/Erase speed
    - Page program time: 1.3ms typical
    - Sector Erase time: 90ms typical
    - Block Erase time 500ms typical
    - Chip Erase time: 5 Seconds typical
• Lockable 256 byte OTP security Sector
• Minimum 100K endurance cycle
• Package Options
    - 8 pins SOP 150mil body width
    - 8 pins SOP 200mil body width
    - 8 contact VDFN
    - All Pb-free packages are RoHS compliant
• Industrial temperature Range

Part Name(s) : EN25S40 EN25S40-75GI EN25S40-75GIP EN25S40-75WI EN25S40-75WIP EN25S40-75XI EN25S40-75XIP Eon
Eon Silicon Solution Inc.
Description : 4 Megabit 1.8V Serial Flash Memory with 4KByte Uniform Sector View

GENERAL DESCRIPTION
The EN25S40 is a 4 Megabit (512K-byte) Serial Flash Memory, with advanced write protection mechanisms. The EN25S40 supports the standard Serial Peripheral Interface (SPI), and a high performance Dual output as well as Dual I/O using SPI pins: Serial Clock, Chip Select, Serial DQ0(DI), DQ1(DO), WP# and HOLD#. SPI clock frequencies of up to 50MHz are supported allowing equivalent clock rates of 100MHz for Dual Output when using the Dual Output Fast Read instructions. The Memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction.

FEATURES
• Single power supply operation
   - Full voltage range: 1.65-1.95 volt
Serial Interface Architecture
   - SPI Compatible: Mode 0 and Mode 3
• 4 M-bit Serial Flash
   - 4 M-bit/512 K-byte/2048 pages
   - 256 bytes per programmable page
• Standard or Dual SPI
   - Standard SPI: CLK, CS#, DI, DO, WP#, HOLD#
   - Dual SPI: CLK, CS#, DQ0, DQ1, WP#, HOLD#
• High performance
   - 75MHz clock rate for one data bit
   - 50MHz clock rate for two data bits
• Low power consumption
   - 7 mA typical active current
   - 1 μA typical power down current
• Uniform Sector Architecture:
   - 128 Sector of 4-Kbyte
   - 8 blocks of 64-Kbyte
   - Any Sector or block can be Erased individually
• Software and Hardware Write Protection:
   - Block Protect Bits are default set to “1” at Power-up
   - Write Protect all or portion of Memory via software
   - Enable/Disable protection with WP# pin
• High performance program/Erase speed
   - Page program time: 1.3ms typical
   - Sector Erase time: 90ms typical
   - Block Erase time 400ms typical
   - Chip Erase time: 3.5 seconds typical
• Lockable 256 byte OTP security Sector
• Minimum 100K endurance cycle
• Package Options
   - 8 pins SOP 150mil body width
   - 8 contact VDFN 2x3mm
   - 8 contact VDFN 5x6 mm
   - All Pb-free packages are RoHS compliant
• Industrial temperature Range

 


Part Name(s) : N25Q256A N25Q256A13E1240E N25Q256A13E1240F N25Q256A13E1240G N25Q256A13E12A0E N25Q256A13E12A0F N25Q256A13E12A0G N25Q256A13E12H0E N25Q256A13E12H0F N25Q256A13E12H0G N25Q256A13EF840E N25Q256A13EF840F N25Q256A13EF840G N25Q256A13EF8A0E N25Q256A13EF8A0F N25Q256A13EF8A0G N25Q256A13EF8H0E N25Q256A13EF8H0F N25Q256A13EF8H0G N25Q256A13ESF40E N25Q256A13ESF40F N25Q256A13ESF40G N25Q256A13ESFA0E N25Q256A13ESFA0F N25Q256A13ESFA0G Micron
Micron Technology
Description : 3V, 256Mb: Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB Sector Erase View

Description
The N25Q is the first high-performance Multiple input/output Serial Flash Memory device manufactured on 65nm NOR technology. It features execute-in-place (XIP) functionality, advanced write protection mechanisms, and a high-speed SPI-compatible bus interface. The innovative, high-performance, dual and quad input/output instructions enable double or quadruple the transfer bandwidth for READ and PROGRAM operations.

Features
The Memory is organized as 512 (64KB) main Sectors that are further divided into 16 subSectors each (8192 subSectors in total). The Memory can be Erased one 4KB subSector at a time, 64KB Sectors at a time, or as a whole.
The Memory can be write protected by software through volatile and nonvolatile protection features, depending on the application needs. The protection granularity is of 64KB (Sector granularity) for volatile protections
The device has 64 one-time programmable (OTP) bytes that can be read and programmed with the READ OTP and PROGRAM OTP commands. These 64 bytes can also be permanently locked with a PROGRAM OTP command.
The device also has the ability to pause and resume PROGRAM and Erase cycles by us ing dedicated PROGRAM/Erase SUSPEND and RESUME instructions.

Part Name(s) : EN25F10 EN25F10-100WI EN25F10-100WIP Eon
Eon Silicon Solution Inc.
Description : 1 Megabit Serial Flash Memory with 4KBytes Uniform Sector View

GENERAL DESCRIPTION
The EN25F10 is a 1M-bit (128K-byte) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The Memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F10 is designed to allow either single Sector/Block at a time or full chip Erase operation. The EN25F10 can be configured to protect part of the Memory as the software protected mode. The device can sustain a minimum of 100K program/Erase cycles on each Sector or block.

FEATURES
• Single power supply operation
- Full voltage range: 2.7-3.6 volt
Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
• 1 Mbit Serial Flash
- 1 M-bit/128 K-byte/512 pages
- 256 bytes per programmable page
• High performance
- 100MHz clock rate
• Low power consumption
- 12 mA typical active current
- 1 µA typical power down current
• Uniform Sector Architecture:
- 32 Sectors of 4-Kbyte
- 4 blocks of 32-Kbyte
- Any Sector or block can be Erased individually
• Software and Hardware Write Protection:
- Write Protect all or portion of Memory via software
- Enable/Disable protection with WP# pin
• High performance program/Erase speed
- Page program time: 1.3ms typical
- Sector Erase time: 90ms typical
- Block Erase time 400ms typical
- Chip Erase time: 1.5 seconds typical
• Lockable 256 byte OTP security Sector
• Minimum 100K endurance cycle
• Package Options
- 8 pins SOP 150mil body width
- 8 contact VDFN
- All Pb-free packages are RoHS compliant
• Industrial temperature Range

Part Name(s) : 25X32BVFIG 25X32BVIG 25X32BVSIG W25X32BV W25X32BVSFIG W25X32BVSSIG W25X32BVZEIG W25X32BVZPIG Winbond
Winbond
Description : 32M-BIT Serial Flash Memory WITH 4KB SectorS AND DUAL OUTPUT SPI View

GENERAL DESCRIPTION
The W25X32BV (32M-bit) Serial Flash Memory provides a storage solution for systems with limited space, pins and power. The 25X series offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code download applications as well as storing voice, text and data. The devices operate on a single 2.7V to 3.6V power supply with current consumption as low as 4mA active and 1µA for power-down. All devices are offered in space-saving packages.

2. FEATURES
Family of Serial Flash Memories
– W25X32BV: 32M-bit / 4M-byte (4,194,304)
– 256-bytes per programmable page
– Uniform 4K-byte Sectors / 64K-byte Blocks
SPI with Single or Dual Outputs
– Clock, Chip Select, Data I/O, Data Out
– Optional Hold function for SPI flexibility
Data Transfer up to 208M-bits / second
– Clock operation to 104MHz
– Fast Read Dual Output instruction
– Auto-increment Read capability
Software and Hardware Write Protection
– Write-Protect all or portion of Memory
– Enable/Disable protection with /WP pin
– Top or bottom array protection
Flexible Architecture with 4KB Sectors
Sector Erase (4K-bytes)
– Block Erase (32K and 64K-byte)
– Page program up to 256 bytes <1ms
– More than 100,000 Erase/write cycles
– More than 20-year retention
Low Power Consumption, Wide Temperature Range
– Single 2.7 to 3.6V supply
– 4mA active current, 1µA Power-down (typ)
– -40° to +85°C operating range
Space Efficient Packaging
– 8-pin SOIC 208-mil
– 8-pad WSON 6x5mm
– 8-pad WSON 8x6mm(1)
– 16-pin SOIC 300-mil

Part Name(s) : EN25F05 EN25F05-100GI EN25F05-100GIP EN25F05-100VI EN25F05-100VIP EN25F05-75GI EN25F05-75GIP EN25F05-75VI EN25F05-75VIP Eon
Eon Silicon Solution Inc.
Description : 512 Kbit Serial Flash Memory with 4KBytes Uniform Sector View

GENERAL DESCRIPTION
The EN25F05 is a 512K-bit (64K-byte) Serial Flash Memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The Memory can be programmed 1 to
256 bytes at a time, using the Page Program instruction. The EN25F05 is designed to allow either single Sector at a time or full chip Erase operation. The EN25F05 can be configured to protect part of the Memory as the software protected mode. The device can sustain a minimum of 100K program/Erase cycles on each Sector.

FEATURES
•Single power supply operation
- Full voltage range: 2.7-3.6 volt
• 512 Kbit Serial Flash
- 512 K -bit/ 64 K-byte/ 256 pages
- 256 bytes per programmable page
•High performance
- 100MHz clock rate
• Low power consumption
- 5 mA typical active current
- 1 μA typical power down current
• Uniform Sector Architecture:
- 16 Sectors of 4-Kbyte
- 2 blocks of 32-Kbyte
- Any Sector or block can be Erased individually

Part Name(s) : 29F040-12AC 29F040-12AI 29F040-12NC 29F040-12NI 29F040-12TC 29F040-12TI 29F040-90AC 29F040-90AI 29F040-90NC 29F040-90NI 29F040-90TC 29F040-90TI BM29F040 BM29F400B BM29F400T Winbond
Winbond
Description : 4 MEGABIT (512K x8) 5 VOLT Sector Erase CMOS Flash Memory View

GENERAL DESCRIPTION
The BM29F040 is a 4 Megabit, 5.0 Volts only Flash Memory device organized as 512K ´8 bits each.
The BM29F040 is offered in an Industry standard 32-pin package which is backward compatible to 1 Megabit and also pin compatible to EEPROMs. The device is offered in PDIP, PLCC and TSOP
packages. The device is designed to be programmed and Erased in system with the standard system 5 Volt Vcc supply. An external 12.0 Volts Vpp is not required for program and Erase operation. The device can also be reprogrammed in standard EPROM programmers.
The BM29F040 offers access times between 70 to 150 nS. The device has separate chip enable
( CE ), write enable ( WE ) and output enable ( OE ) controls to eliminate bus contention.

FEATURES
· 5.0 V +/- 10% Program and Erase
  - Minimizes system power consumption
  - Simplifies the system design
· Compatible with JEDEC standard commands
  - Uses same software commands as EEPROMs
· Compatible with JEDEC-standard byte wide pinout
  - 32 pin PLCC/TSOP
  - 32 pin DIP
· Automated Sector/chip Erase Algorithms
  - No programming before Erase needed
  - Internal program and Erase Margin Check
· Data Polling and Toggle Bit
  - useful for detection of Program and Erase cycle completion
· Sector Erase architecture
  - 8 Equal Sectors of 64K bytes each
  - Any combination of Multiple Sector Erase
  - Full Chip Erase
· Sector Protection
  - Any number of Sectors can be protected from Program and Erase operation
· Low Power Consumption
· Typically 100,000 Program/Erasecycles
· Erase Suspend and Resume
  - Suspend the Sector Erase Operation to allow a READ in another Sector
·Low Vcc Write inhibit <3.2 volts
·Single Cycle reset command

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