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Part Name(s) : 2SK1270 K1270 Hitachi
Hitachi -> Renesas Electronics
Description : SILICON N-CHANNEL MOSFET HIGH SPEEED POWER SWITCHING View

SILICON N-CHANNEL MOSFET HIGH SPEEED POWER SWITCHING

Part Name(s) : EMH2302 SANYO
SANYO -> Panasonic
Description : P-CHANNEL Silicon MOSFET General-Purpose SWITCHING Device Applications View

P-CHANNEL Silicon MOSFET
General-Purpose SWITCHING Device Applications

Features
• The EMH2302 incorporates a P-CHANNEL MOSFET that feature low ON-resistance and ultrahigh-speed SWITCHING, thereby enabling high-density mounting.
• 4V drive.

 

Part Name(s) : MRF151A MACOM
Tyco Electronics
Description : The RF MOSFET Line RF POWER Field-Effect Transistor N-Channel Enhancement-Mode MOSFET View

The RF MOSFET Line RF POWER Field-Effect Transistor N-Channel Enhancement-Mode MOSFET

Part Name(s) : UK4145 UK4145G-TA3-T UK4145L-TA3-T UTC
Unisonic Technologies
Description : SWITCHING N-CHANNEL POWER MOSFET View

DESCRIPTION
The UTC UK4145 is N-channel POWER MOSFET, suitable for high current SWITCHING applications.

„ FEATURES
* Low on-state resistance:
  RDS(ON) =10mΩ (Max.) @ VGS =10V, ID =42A
* Low input capacitance:
   CISS = 5300pF (Typ.)


Part Name(s) : SCH1433 SANYO
SANYO -> Panasonic
Description : N-Channel Silicon MOSFET General-Purpose SWITCHING Device Applications View

N-Channel Silicon MOSFET
General-Purpose SWITCHING Device Applications

Features
• 1.8V drive.
• Halogen free compliance.

Part Name(s) : CPH3438 SANYO
SANYO -> Panasonic
Description : N-Channel Silicon MOSFET General-Purpose SWITCHING Device Applications View

N-Channel Silicon MOSFET
General-Purpose SWITCHING Device Applications

Features
• Low ON-resistance.
• Ultrahigh-speed SWITCHING.
• 4V drive.

Part Name(s) : 2SK3548 K3548 Fuji
Fuji Electric
Description : 2SK3548 SWITCHING N-CHANNEL POWER MOSFET View

2SK3548 SWITCHING N-CHANNEL POWER MOSFET

Part Name(s) : RFV10N50BE V10N50BE Intersil
Intersil
Description : 10A, 500V, Fast SWITCHING N-Channel Enhancement-Mode POWER MOSFETs View

Description
The RFV10N50BE is an N-Channel fast SWITCHING MOSFET transistor that is designed for SWITCHING regulators, inverters and motor drivers. The RFV10N50BE is a monolithic structure incorporating a high voltage, high current MOSFET, a control MOSFET and ESD protection diodes. As indicated in the symbol to the right, the turn-on of the main MOSFET is controlled by Gate 1 (G1). The control MOSFET, controlled by Gate 2 (G2), is distributed throughout the structure. Gate 2 provides a very low impedance and inductive path to rapidly discharge the gate of the main MOSFET. Gate 2 affords very fast turn-off (typically less than 25ns) when desired. A separate return connection, Source Kelvin (SK), is supplied for the gate drive circuit to avoid voltage induced transients from the output circuit during SWITCHING. The RFV10N50BE can be operated directly from integrated circuits.

Features
• 10A, 500V
• rDS(ON) = 0.480Ω
• Very Fast Turn-Off Characteristics
• Nanosecond SWITCHING Speeds
• Electrostatic Discharge Protected
• UIS Rating Curve
• SOA is POWER Dissipation Limited
• High Input Impedance

Part Name(s) : 2SJ210 J210 Renesas
Renesas Electronics
Description : P-CHANNEL MOSFET FOR SWITCHING View

The 2SJ210, P-CHANNEL vertical type MOSFET, is a SWITCHING device which can be driven directly by the output of ICs having a 5 V POWER source.
The 2SJ210 has excellent SWITCHING characteristics and is suitable as a high-speed SWITCHING device in digital circuits.

FEATURES
• Directly driven by the output of ICs having a 5 V POWER source.
• Not necessary to consider driving current because of its high input impedance.
• Possible to reduce the number of parts by omitting the bias resistor.

 

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