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Description : Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar transistor arrays. The ISL73096RH consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127RH consists of five NPN transistors on a common substrate. The ISL73128RH consists of five PNP transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment.

Features
• Electrically Screened to SMD # 5962-07218
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
   - Gamma Dose (γ) . . . . . . . . . . 3 x 105RAD(Si)
   - SEL Immune . . Bonded Wafer Dielectric Isolation
NPN Gain Bandwidth Product (FT) . . . 8GHz (Typ)
NPN Current Gain (hFE). . . . . . . . . . . . 130 (Typ)
NPN Early Voltage (VA) . . . . . . . . . . . . 50V (Typ)
• PNP Gain Bandwidth Product (FT) . . . 5.5GHz (Typ)
• PNP Current Gain (hFE) . . . . . . . . . . . . . 60 (Typ)
• PNP Early Voltage (VA) . . . . . . . . . . . . 20V (Typ)
• Noise Figure (50Ω) at 1GHz . . . . . . . . 3.5dB (Typ)
• Collector-to-Collector Leakage . . . . . . <1pA (Typ)
• Complete Isolation Between transistors

Applications
• High Frequency Amplifiers and Mixers
   - Refer to Application Note AN1503
• High Frequency Converters
• Synchronous Detector

Description : General Purpose NPN Transistor Arrays

General Purpose NPN Transistor Array

The CA3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially connected pair.
The transistors of the CA3046 are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete transistors in conventional circuits. However, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching.

Features
• Two Matched transistors
   - VBE Match . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV
   - IIO Match. . . . . . . . . . . . . . . . . . . . . . . . . . . . .2µA (Max)
• Low Noise Figure . . . . . . . . . . . . . . . . 3.2dB (Typ) at 1kHz
• 5 General Purpose Monolithic transistors
• Operation From DC to 120MHz
• Wide Operating Current Range
• Full Military Temperature Range

Applications
• Three Isolated transistors and One Differentially
   Connected Transistor Pair for Low power Applications at
   Frequencies from DC Through the VHF Range
• Custom Designed Differential Amplifiers
• Temperature Compensated Amplifiers
• See Application Note, AN5296 “Application of the CA3018
   Integrated-Circuit Transistor Array” for Suggested
   Applications

Description : silicon transistors UHF/VHF power transistors

silicon transistors UHF/VHF power transistors

NPN type

germanium transistors

diffused-base MESA transistors
ultra-high-speed switching

Part Name(s) : BUF405A BUF405AFP
ST-Microelectronics
STMicroelectronics
Description : HIGH VOLTAGE FAST-switching NPN power transistors

DESCRIPTION
These Easy-to-Drive FASTSWITCH NPN power transistors are specially designed for high reliability industrial and professional power driving applications such us motor drives and off-line switching power supplies. ETD transistors will operate using easy drive circuits at up to 100KHz; this helps to simplify designs and improve reliability. The superior switching performance and low crossover losses reduce dissipation and consequently lowers the equipment operating temperature.

■ HIGH switching SPEED NPN power transistors
■ EASY TO DRIVE
■ HIGH VOLTAGE FOR OFF-LINE APPLICATIONS
■ 100 KHz switching SPEED
■ LOW COST DRIVE CIRCUITS
■ LOW DYNAMIC SATURATION

APPLICATIONS:
■ SWITCH MODE power SUPPLIES
■ MOTOR DRIVERS

 

Part Name(s) : NTE912
NTE-Electronic
NTE Electronics
Description : Integrated Circuit General Purpose Transistor Array (Three Isolated transistors and One Differentially–Connected Transistor Pair)

Description:
The NTE912 consists of five general–purpose silicon NPN transistors on a common monolithic substrate in a 14–Lead DIP type package. Two of the transistors are internally connected to form a differentially–connected pair.
The transistors of the NTE912 are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete transistors in conventional circuits. How ever, in addition, they provide the very significant inherent integrated circuit advantages of close elec trical and thermal matching.

Features:
● Two Matched Pairs of transistors:
   VBE matched ±5mV
   Input Offset Current 2µA Max. @ IC = 1mA
● 5 General Purpose Monolithic transistors
● Operation from DC to 120MHz
● Wide Operating Current Range
● Low Noise Figure: 3.2dB Typ @ 1kHz

Applications:
● General Use In All types of Signal Processing Systems Operating Anywhere in the Frequency Range from DC to VHF
● Custom Designed Differential Amplifiers
● Temperature Compensated Amplifiers

 

Description : NPN silicon Planar Darlington transistors

NPN silicon Planar Darlington transistors

BD875, BD877 and BD879 are epitaxial NPN silicon planar darlington transistors in TO 126 plastic package (12 A 3 DIN 41869, sheet 4). These darlington transistors are designed for relay drivers as well as for general AF applications. BD876 BD878 and BD880 are provided as complementary  transistors.

Part Name(s) : AS3046 AS3046D
ETC
Unspecified
Description : NPN Transistor Array

[Joint Stock Company ALFA]

General Description
The AS3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially-connected pair. The transistors are well suited to a wide variety of applications in low power system. They may be used as discrete transistors in conventional circuits however, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching. The AS3046 is supplied in a 14-lead plastic SOIC-14(150Mil) package.

Features
• matched pair of NPN transistors
• VBE matched less than ±1 mV
• 5 general purpose monolithic transistors
• wide operating current range

Applications
• filters
• custom designed differential amplifiers
• temperature compensated amplifiers

Part Name(s) : 2N3013 2N3014 2N3009
NJSEMI
New Jersey Semiconductor
Description : NPN silicon HIGH SPEED switching transistors

NPN silicon HIGH SPEED switching transistors

2N3009, 2N3013, 2N3014 types are silicon NPN switching transistors designed for high speed, medium power saturated switching applications.

Part Name(s) : TIP140 TIP141 TIP142
Comset
Comset Semiconductors
Description : NPN silicon DARLINGTONS, silicon power transistors

NPN silicon DARLINGTONS, silicon power transistors

They are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are
mounted in TO-3PN plastic packtage.
They are intended for use in power linear and switching application.
The complementary are TIP145, TIP146, TIP147.
Compliance to RoHS

ON-Semiconductor
ON Semiconductor
Description : Complementary silicon power transistors

4.0 AMPERES COMPLEMENTARY silicon power transistors 200 −250 VOLTS, 150 WATTS

MJ15020 − NPN
MJ15021 − PNP

Complementary silicon power transistors
These transistors are designed for use as high frequency drivers in Audio Amplifiers.

Features
•High Gain Complementary silicon power transistors
•Safe Operating Area 100% Tested 50 V, 3.0 A, 1.0 Sec
•Excellent Frequency Response −fT= 20 MHz min

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