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Part Name(s) : LC821	Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR	View
General Description SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet"™ process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 8.0 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

Part Name(s) : LK721	Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR	View
General Description SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 35.0 Watts Push - Pull Package Style AK HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

Part Name(s) : LC801	Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR	View
General Description SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 20.0 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

Part Name(s) : LK822	Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR	View
General Description SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 40.0 Watts Push - Pull Package Style AK HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

Part Name(s) : LK701	Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR	View
General Description SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet"™ process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 70.0 Watts Push - Pull Package Style AK HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

Part Name(s) : LK822	Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR	View
General Description SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 40.0 Watts Push - Pull Package Style AK HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT

Part Name(s) : LK722	Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER TRANSISTOR LDMOS	View
General Description SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances, resulting in high Ft TRANSISTORs with high input impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER TRANSISTOR LDMOS 45.0 Watts Push - Pull Package Style AK HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT

Part Name(s) : LC801	Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR	View
General Description SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 20.0 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT

Part Name(s) : LK701	Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR	View
General Description SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet"™ process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 70.0 Watts Push - Pull Package Style AK HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT

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