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Part Name(s) : LC821 Polyfet-RF
Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR View

General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"™ process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
8.0 Watts Single Ended
Package Style AC

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

Part Name(s) : LK721 POLYFET
Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR View

General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

35.0 Watts Push - Pull
Package Style AK

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

Part Name(s) : LC801 POLYFET
Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR View

General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
20.0 Watts Single Ended
Package Style AC

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

Part Name(s) : LK822 POLYFET
Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR View

General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
40.0 Watts Push - Pull
Package Style AK

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE


Part Name(s) : LK701 Polyfet-RF
Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR View

General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"™ process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
70.0 Watts Push - Pull
 Package Style AK

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

Part Name(s) : LK822 Polyfet-RF
Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR View

General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
40.0 Watts Push - Pull
Package Style AK

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
ROHS COMPLIANT

Part Name(s) : LK722 Polyfet-RF
Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER TRANSISTOR LDMOS View

General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances, resulting in high Ft TRANSISTORs with high input impedance and high efficiency.


SILICON GATE ENHANCEMENT MODE RF POWER TRANSISTOR LDMOS

45.0 Watts Push - Pull
Package Style AK

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
ROHS COMPLIANT

Part Name(s) : LC801 Polyfet-RF
Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR View

General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
20.0 Watts Single Ended
Package Style AC

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
ROHS COMPLIANT

Part Name(s) : LK701 POLYFET
Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR View

General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"™ process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
70.0 Watts Push - Pull
Package Style AK

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
ROHS COMPLIANT

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