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Part Name(s) : LY402
Polyfet-RF
Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

220.0 Watts Push - Pull
Package Style AY

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

Part Name(s) : LY402
POLYFET
Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

220.0 Watts Push - Pull
Package Style AY

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

Part Name(s) : LP722
POLYFET
Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances, resulting in high Ft TRANSISTORs with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

35.0 Watts Single Ended
Package Style AP

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

Part Name(s) : LX401
POLYFET
Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances, resulting in high Ft TRANSISTORs with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

60.0 Watts Single Ended
Package Style LX2

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

Part Name(s) : LK721
POLYFET
Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

35.0 Watts Push - Pull
Package Style AK

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

Part Name(s) : LC821
Polyfet-RF
Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"™ process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

8.0 Watts Single Ended
Package Style AC

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

Part Name(s) : LC801
POLYFET
Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
20.0 Watts Single Ended
Package Style AC

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

Part Name(s) : LK822
POLYFET
Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
40.0 Watts Push - Pull
Package Style AK

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

Part Name(s) : LX723
POLYFET
Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features
low feedback and output capacitances, resulting in high Ft TRANSISTORs with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

45.0 Watts Single Ended
Package Style LX2

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

Part Name(s) : LK701
Polyfet-RF
Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"™ process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
70.0 Watts Push - Pull
 Package Style AK

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

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