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Polyfet RF Devices
General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
220.0 Watts Push - Pull
Package Style AY
HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
Polyfet RF Devices
General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
220.0 Watts Push - Pull
Package Style AY
HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
Polyfet RF Devices
General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances, resulting in high Ft TRANSISTORs with high input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
35.0 Watts Single Ended
Package Style AP
HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
Polyfet RF Devices
General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances, resulting in high Ft TRANSISTORs with high input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
60.0 Watts Single Ended
Package Style LX2
HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
Polyfet RF Devices
General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
35.0 Watts Push - Pull
Package Style AK
HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
Polyfet RF Devices
General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"™ process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
8.0 Watts Single Ended
Package Style AC
HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
Polyfet RF Devices
General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
20.0 Watts Single Ended
Package Style AC
HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
Polyfet RF Devices
General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
40.0 Watts Push - Pull
Package Style AK
HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
Polyfet RF Devices
General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features
low feedback and output capacitances, resulting in high Ft TRANSISTORs with high input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
45.0 Watts Single Ended
Package Style LX2
HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
Polyfet RF Devices
General Description
SILICON VDMOS and LDMOS TRANSISTORs designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"™ process features low feedback and output capacitances resulting in high Ft TRANSISTORs with high input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
70.0 Watts Push - Pull
Package Style AK
HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
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