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Part Name(s) : MSR2N2369AUB MSR2N2369AUBC JANSR2N2369AUB JANSR2N2369AUBC Microsemi
Microsemi Corporation
Description : Rad Hard NPN Silicon High Speed Switching Transistor

DESCRIPTION
This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to drive many high-reliability applications. This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots. Fully compliant to GSFC EEE-INST-002 reliability, screening and radiation hardness assurance requirements for space flight projects

FEATURES
• JEDEC registered 2N2369
• TID level screened per MIL-PRF-19500
• Also available with ELDRS testing to 0.01 Rad(s)/ sec
• MKCR / MHCR chip die available
• RHA (Radiation hardness assured) lot by lot
   validation testing via ELDR 0.1 Rad (SI)/sec dose rate

APPLICATIONS / BENEFITS
RAD-HARD power supplies
RAD-HARD motor controls
• General purpose switching
• Instrumentation Amps
• EPS Satellite switching power applications

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Part Name(s) : 54AC00 54AC02 54AC04 54AC08 54AC10 54AC11 54AC138 54AC139 54AC14 54AC151 54AC157 54AC161 54AC16244 54AC16245 54AC16373 54AC16374 54AC164245 54AC174 54AC191 54AC240 54AC244 54AC245 54AC2525 54AC273 54AC32 ST-Microelectronics
STMicroelectronics
Description : RAD-HARD ADVANCED HIGH-SPEED 5 V CMOS LOGIC SERIES

Description
The 54AC and 54ACT SERIES represent over 60 product types with different HIGH-SPEED CMOS functions, specifically designed to meet the radiation requirements of the aerospace industry. They include a large set of gates, flip-flops, multiplexers, counters, bus interfaces, and several other functions. Their radiation hardness, immunity from single event latch-up (SEL) and single event upset (SEU), and housing in hermetic packages make them suitable for the most difficult environmental conditions. The complete specification for each type is available from the DSCC web site: www.dscc.dla.mil. STMicroelectronics guarantees full compliance of qualified parts with these DSCC specifications.

Features
■ 2 to 6 V operating voltage
■ High speed TPD = 4.5 ns (typ.)
■ Low DC power dissipation: 8 µA max.
■ Symmetrical 24 mA output characteristics
■ High noise immunity: 28% of min. VCC
■ Power-down input protection
■ Balanced propagation delays
■ Improved electrical latch-up immunity
■ Controlled rise and fall times
■ Operating temperature: - 55 to 150 °C
■ Hermetic packages
RAD-HARD: 300 kRad TID at any Mil1019 dose rates
■ SEL immune to 110 MeV/cm²/mg LET ions
■ RHA QML-V qualified
■ Same die and electrical specification for engineering and flight models

 

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Part Name(s) : 0002RH 5962-78013 MSK0002HRH MSK0002KRH MSK0002RH MSK
M.S. Kennedy Corporation
Description : RAD HARD, HIGH SPEED, BUFFER AMPLIFIER

DESCRIPTION:
The MSK 0002RH is a general purpose current amplifier. It is the industry wide RAD tolerant replacement for the LH0002. The device is ideal for use with an operational amplifier in a closed loop configuration to increase current output. The MSK 0002RH is designed with a symmetrical output stage that provides low output impedances to both the positive and negative portions of output pulses.

FEATURES:
• Radiation Hardened to 100 Krads(Si) (Method 1019.7 Condition A)
• Radiation Hardened LH0002 Replacement
• High Input Impedance-180KΩMin
• Low Output Impedance-10ΩMax
• Low Harmonic Distortion
• DC to 30 MHz Bandwidth
• Slew Rate is Typically 400 V/μS
• Operating Range from±5V to ±20V
• Available to DSCC SMD 5962-78013
• Equivalent Non Rad Hard Device MSK 0002

TYPICAL APPLICATIONS
• High Speed D/A Conversion
• 30MHz Buffer
• Line Driver
• Precision Current Source

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Part Name(s) : JANSR2N7272 Intersil
Intersil
Description : 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET

Description
The Intersil Corporation,has designed a SERIES of SECOND GENERATION hardened power MOSFETs of both N-Chan nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose rate hard ness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

Features
• 8A, 100V, rDS(ON) = 0.180Ω
• Total Dose
  - Meets Pre-RAD Specifications to 100K RAD (Si)
• Dose Rate
  - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
  - Typically Survives 2E12 if Current Limited to IDM
• Photo Current
  - 1.5nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2

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Part Name(s) : HCC4001BD HCC4001BK HCC4002BD HCC4002BK HCC4008BD HCC4008BK HCC40103BD HCC40103BK HCC40106BD HCC40106BK HCC40107BD HCC40107BK HCC40109BD HCC40109BK HCC4011BD HCC4011BK HCC4012BD HCC4012BK HCC4013BD HCC4013BK HCC4014BD HCC4014BK HCC4015BD HCC4015BK HCC40161BD ST-Microelectronics
STMicroelectronics
Description : RAD-HARD high voltage CMOS LOGIC SERIES

RAD-HARD high voltage CMOS LOGIC SERIES

Description
The HCC40xxx and HCC45xxx SERIES are composed of over 70 types of high voltage CMOS
functions, offering a set of highly noise tolerant gates, Flip-Flops, multiplexers, counters, bus
interfaces and several other functions. The radiation hardness, the single event latch-up
(SEL) and the single event upset (SEU) immunity and the housing in hermetic packages of all types
of both SERIES make them usable in the most difficult environmental conditions.

Features
■ 3 to 20 V max operating voltage
■ Bufferized inputs and outputs
■ Standardized symmetrical outputs characteristic
■ 50 ns typical propagation delays
■ 100 nA max 25 °C input current
■ 100% tested 20 V quiescent current
■ 5-10-15 V parametric testing
■ Hermetic packages
RAD-HARD 100 kRad TID at 11rad/sec dose rate
■ SEL-SEU immune to 72 MeV/cm²/mg LET ions
■ ESCC qualified

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Part Name(s) : FRE260D FRE260R FRE260H Intersil
Intersil
Description : 31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs

Description
The Intersil has designed a SERIES of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

Features
• 31A, 200V, RDS(on) = 0.080Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
    - Meets Pre-Rad Specifications to 100KRAD(Si)
    - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
    - Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot
    - Survives 3E9 RAD(Si)/sec at 80% BVDSS Typically
    - Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 18.0nA Per-RAD(Si)/sec Typically
• Neutron
    - Pre-RAD Specifications for 1E13 Neutrons/cm2
    - Usable to 1E14 Neutrons/cm2

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Part Name(s) : FRM140D FRM140R FRM140H Intersil
Intersil
Description : 23A, 100V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs

Description
The Intersil Corporation has designed a SERIES of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

Features
• 23A, 100V, RDS(on) = 0.130Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
    - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
    - Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
    - Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 3.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 3E13 Neutrons/cm2
    - Usable to 3E14 Neutrons/cm2

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Part Name(s) : FRL430D FRL430R FRL430H Intersil
Intersil
Description : 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs

Description
The Intersil Corporation has designed a SERIES of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

Features
• 2A, 500V, RDS(on) = 2.50Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
    - Meets Pre-Rad Specifications to 100KRAD(Si)
    - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
    - Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot
    - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
    - Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 8.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 3E12 Neutrons/cm2
    - Usable to 3E13 Neutrons/cm2

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Part Name(s) : FRM9130D FRM9130H FRM9130R M9130 Intersil
Intersil
Description : 6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs

Description
The Intersil has designed a SERIES of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm 2for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

Features
• 6A, -100V, RDS(on) = 0.550Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 1.50nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2

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Part Name(s) : FRF254D FRF254R FRF254H Intersil
Intersil
Description : 17A, 250V, 0.185 Ohm, Rad Hard, N-Channel Power MOSFETs

Description
The Intersil has designed a SERIES of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

Features
• 17A, 250V, RDS(on) = 0.185Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
    - Meets Pre-Rad Specifications to 100KRAD(Si)
    - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
    - Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot
    - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
    - Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 15.0nA Per-RAD(Si)/sec Typically
• Neutron
    - Pre-RAD Specifications for 1E13 Neutrons/cm2
    - Usable to 1E14 Neutrons/cm2

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