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Description : 28/40-Pin High-Performance, Enhanced Flash Microcontrollers with CAN MODULE

DEVICE OVERVIEW
This document contains device specific information for the following devices:

• PIC18F248
• PIC18F258
• PIC18F448
• PIC18F458

These devices are available in 28-pin, 40-pin and 44-pin packages. They are differentiated from each other in four ways:

1. PIC18FX58 devices have twice the Flash program memory and data RAM of PIC18FX48 devices (32 Kbytes and 1536 bytes vs. 16 Kbytes and 768 bytes, respectively).
2. PIC18F2X8 devices implement 5 A/D channels, as opposed to 8 for PIC18F4X8 devices.
3. PIC18F2X8 devices implement 3 I/O ports, while PIC18F4X8 devices implement 5.
4. Only PIC18F4X8 devices implement the Enhanced CCP MODULE, analog comparators and the  Parallel Slave Port.

All other features for devices in the PIC18FXX8 family, including the serial communications MODULEs, are identical. These are summarized in Table 1-1. Block diagrams of the PIC18F2X8 and PIC18F4X8 devices are provided in Figure 1-1 and Figure 1-2, respectively. The pinouts for these device families are listed in Table 1-2.

High-Performance RISC CPU:
• Linear program memory addressing up to 2 Mbytes
• Linear data memory addressing to 4 Kbytes
• Up to 10 MIPS operation
• DC – 40 MHz clock input
• 4 MHz-10 MHz oscillator/clock input with PLL active
• 16-bit wide instructions, 8-bit wide data path
• Priority levels for interrupts
• 8 x 8 Single-Cycle Hardware Multiplier

Peripheral Features:
• High current sink/source 25 mA/25 mA
• Three external interrupt pins
• Timer0 MODULE: 8-bit/16-bit timer/counter with 8-bit programmable prescaler
• Timer1 MODULE: 16-bit timer/counter
• Timer2 MODULE: 8-bit timer/counter with 8-bit period register (time base for PWM)
• Timer3 MODULE: 16-bit timer/counter
• Secondary oscillator clock option – Timer1/Timer3
• Capture/Compare/PWM (CCP) MODULEs; CCP pins can be configured as:
- Capture input: 16-bit, max resolution 6.25 ns
- Compare: 16-bit, max resolution 100 ns (TCY)
- PWM output: PWM resolution is 1 to 10-bit
  Max. PWM freq. @:8-bit resolution = 156 kHz
                   10-bit resolution = 39 kHz
• Enhanced CCP MODULE which has all the features of the standard CCP MODULE, but also has the following features for advanced motor control:
- 1, 2 or 4 PWM outputs
- Selectable PWM polarity
- Programmable PWM dead time
• Master Synchronous Serial Port (MSSP) with two modes of operation:
- 3-wire SPI™ (Supports all 4 SPI modes)
- I2C™ Master and Slave mode
• Addressable USART MODULE:
- Supports interrupt-on-address bit

Advanced Analog Features:
• 10-bit, up to 8-channel Analog-to-Digital Converter MODULE (A/D) with:
- Conversion available during Sleep
- Up to 8 channels available
• Analog Comparator MODULE:
- Programmable input and output multiplexing
• Comparator Voltage Reference MODULE
• Programmable Low-Voltage Detection (LVD) MODULE:
- Supports interrupt-on-Low-Voltage Detection
• Programmable Brown-out Reset (BOR) CAN bus MODULE Features:
• Complies with ISO CAN Conformance Test
• Message bit rates up to 1 Mbps
• Conforms to CAN 2.0B Active Spec with:
- 29-bit Identifier Fields
- 8-byte message length
- 3 Transmit Message Buffers with prioritization
- 2 Receive Message Buffers
- 6 full, 29-bit Acceptance Filters
- Prioritization of Acceptance Filters
- Multiple Receive Buffers for High Priority
  Messages to prevent loss due to overflow
- Advanced Error Management Features

Special Microcontroller Features:
• Power-on Reset (POR), Power-up Timer (PWRT) and Oscillator Start-up Timer (OST)
• Watchdog Timer (WDT) with its own on-chip RC oscillator
• Programmable code protection
• Power-saving Sleep mode
• Selectable oscillator options, including:
- 4x Phase Lock Loop (PLL) of primary oscillator
- Secondary Oscillator (32 kHz) clock input
• In-Circuit Serial ProgrammingTM (ICSPTM) via two pins

Flash Technology:
• Low-power, high-speed Enhanced Flash technology
• Fully static design
• Wide operating voltage range (2.0V to 5.5V)
• Industrial and Extended temperature ranges

Description : 8M × 72-Bit EDO- DRAM MODULE (ECC - MODULE) 168 pin buffered DIMM MODULE

8M × 72-Bit EDO- DRAM MODULE (ECC - MODULE) 168 pin buffered DIMM MODULE

The HYM 72V8025/35GS-50/-60 is a 64 MByte DRAM MODULE organized as 8 388 608 words by 72-bit in a 168-pin, dual read-out, single-in-line package comprising nine HYB3165805AJ/AT 8M × 8 DRAMs in 400 mil wide SOJ or TSOPII - packages mounted together with ceramic decoupling capacitors on a PC board. All inputs except RAS and DQ are buffered by using BiCMOS buffers/line drivers.
Each HYB3165805AJ/AT is described in the data sheet and is fully electrically tested and processed according to Siemens standard quality procedure prior to MODULE assembly. After assembly onto the board, a further set of electrical tests is performed.
The density and speed of the MODULE can be detected by the use of presence detect pins.

• 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory MODULE for PC main memory applications
• 1 bank 8 M x 72 organisation
• Optimized for ECC applications
• Hyper Page Mode - EDO Operation
• Performance:

• Single + 3.3V ± 0.3 V supply
• CAS-before-RAS refresh, RAS-only refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully LVTTL & LVCMOS compatible
• 4 Byte interleave enabled, Dual Address inputs (A0/B0)
• Buffered inputs excepts RAS and DQ
• Parallel Presence Detects
• Utilizes nine 8M × 8 -DRAMs and BiCMOS buffers/line drivers VT244A
• Two versions: HYM 72V8035GS with SOJ-components ( 9 mm MODULE thickness)
                         HYM 72V8025GS with TSOPII-components ( 4 mm MODULE thickness)
• 4048 refresh cycles / 64 ms with 12 / 11 addressing
• Gold contact pad
• Double sided MODULE with 25.35 mm (1000 mil) height

Description : 8M × 72-Bit EDO- DRAM MODULE (ECC - MODULE)

8M × 72-Bit EDO- DRAM MODULE (ECC - MODULE) 168 pin buffered DIMM MODULE

The HYM 72V8025/35GS-50/-60 is a 64 MByte DRAM MODULE organized as 8 388 608 words by 72-bit in a 168-pin, dual read-out, single-in-line package comprising nine HYB3165805AJ/AT 8M × 8 DRAMs in 400 mil wide SOJ or TSOPII - packages mounted together with ceramic decoupling capacitors on a PC board. All inputs except RAS and DQ are buffered by using BiCMOS buffers/line drivers.
Each HYB3165805AJ/AT is described in the data sheet and is fully electrically tested and processed according to Siemens standard quality procedure prior to MODULE assembly. After assembly onto the board, a further set of electrical tests is performed.
The density and speed of the MODULE can be detected by the use of presence detect pins.

• 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory MODULE for PC main memory applications
• 1 bank 8 M x 72 organisation
• Optimized for ECC applications
• Hyper Page Mode - EDO Operation
• Performance:

• Single + 3.3V ± 0.3 V supply
• CAS-before-RAS refresh, RAS-only refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully LVTTL & LVCMOS compatible
• 4 Byte interleave enabled, Dual Address inputs (A0/B0)
• Buffered inputs excepts RAS and DQ
• Parallel Presence Detects
• Utilizes nine 8M × 8 -DRAMs and BiCMOS buffers/line drivers VT244A
• Two versions: HYM 72V8035GS with SOJ-components ( 9 mm MODULE thickness)
                         HYM 72V8025GS with TSOPII-components ( 4 mm MODULE thickness)
• 4048 refresh cycles / 64 ms with 12 / 11 addressing
• Gold contact pad
• Double sided MODULE with 25.35 mm (1000 mil) height

Description : High-Performance Microcontrollers with CAN MODULE

High-Performance Microcontrollers with CAN MODULE

High Performance RISC CPU:
• C-compiler optimized architecture instruction set
• Linear program memory addressing to 32 Kbytes
• Linear data memory addressing to 4 Kbytes
• Up to 10 MIPS operation:
    - DC - 40 MHz clock input
    - 4 MHz - 10 MHz osc./clock input with PLL active
• 16-bit wide instructions, 8-bit wide data path
• Priority levels for interrupts
• 8 x 8 Single Cycle Hardware Multiplier

Peripheral Features:
• High current sink/source 25 mA/25 mA
• Up to 76 I/O with individual direction control
• Four external interrupt pins
• Timer0 MODULE: 8-bit/16-bit timer/counter with 8-bit programmable prescaler
• Timer1 MODULE: 16-bit timer/counter
• Timer2 MODULE: 8-bit timer/counter with 8-bit period register (time base for PWM)
• Timer3 MODULE: 16-bit timer/counter
• Secondary oscillator clock option - Timer1/Timer3
• Two Capture/Compare/PWM (CCP) MODULEs CCP pins can be configured as:
    - Capture input: 16-bit, max resolution 6.25 ns
    - Compare is 16-bit, max resolution 100 ns (TCY)
    - PWM output: PWM resolution is 1- to 10-bit. Max. PWM freq. @:8-bit resolution = 156 kHz 10-bit resolution = 39 kHz
• Master Synchronous Serial Port (MSSP) with two modes of operation:
    - 3-wire SPI™ (Supports all 4 SPI modes)
    - I2C™ Master and Slave mode
• Addressable USART MODULE: Supports Interrupt on Address bit

Advanced Analog Features:
• 10-bit Analog-to-Digital Converter MODULE (A/D) with:
    - Fast sampling rate
    - Conversion available during SLEEP
    - DNL = ±1 LSb, INL = ±1 LSb
    - Up to 16 channels available
• Analog Comparator MODULE:
    - 2 Comparators
    - Programmable input and output multiplexing
• Comparator Voltage Reference MODULE
• Programmable Low Voltage Detection (LVD) MODULE
    - Supports interrupt on low voltage detection
• Programmable Brown-out Reset (BOR)

CAN BUS MODULE Features:
• Message bit rates up to 1 Mbps
• Conforms to CAN 2.0B ACTIVE Spec with:
    - 29-bit Identifier Fields
    - 8 byte message length
• 3 Transmit Message Buffers with prioritization
• 2 Receive Message Buffers
• 6 full 29-bit Acceptance Filters
• Prioritization of Acceptance Filters
• Multiple Receive Buffers for High Priority Messages to prevent loss due to overflow
• Advanced Error Management Features

Special Microcontroller Features:
• Power-on Reset (POR), Power-up Timer (PWRT), and Oscillator Start-up Timer (OST)
• Watchdog Timer (WDT) with its own on-chip RC oscillator
• Programmable code protection
• Power saving SLEEP mode
• Selectable oscillator options, including:
    - 4X Phase Lock Loop (of primary oscillator)
    - Secondary Oscillator (32 kHz) clock input
• In-Circuit Serial Programming (ICSP™) via two pins

CMOS Technology:
• Low power, high speed EPROM technology
• Fully static design
• Wide operating voltage range (2.5V to 5.5V)
• Industrial and Extended temperature ranges
• Low power consumption

Description : 8M × 72-Bit Dynamic RAM MODULE (ECC - MODULE)

8M × 72-Bit Dynamic RAM MODULE (ECC - MODULE)
168 pin buffered DIMM MODULE

The HYM 72V8020/30GS-50/-60 is a 64 MByte DRAM MODULE organized as 8 388 608 words by 72- bit in a 168-pin, dual read-out, single-in-line package comprising nine HYB3165800AJ/AT 8M × 8 DRAMs in 400 mil wide SOJ or TSOPII - packages mounted together with ceramic decoupling capacitors on a PC board. All inputs except RAS and DQ are buffered by using BiCMOS buffers/ line drivers.

• 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory MODULE for PC main memory applications
• 1 bank 8 M x 72 organisation
• Optimized for ECC applications
• Fast Page Mode Operation
• Performance:

• Single + 3.3V ± 0.3 V supply
• CAS-before-RAS refresh, RAS-only refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully LVTTL & LVCMOS compatible
• 4 Byte interleave enabled, Dual Address inputs (A0/B0)
• Buffered inputs excepts RAS and DQ
• Parallel Presence Detects
• Utilizes nine 8M × 8 -DRAMs and BiCMOS buffers/line drivers VT244A
• Two versions: HYM 72V8030GS with SOJ-components ( 9 mm MODULE thickness)
                          HYM 72V8020GS with TSOPII-components ( 4 mm MODULE thickness)
• 4048 refresh cycles / 64 ms with 12 / 11 addressing
• Gold contact pad
• Double sided MODULE with 25.35 mm (1000 mil) height

Description : DDR SDRAM Registered MODULE

184pin Registered MODULE based on 256Mb E-die (x4, x8) with 1,700 / 1,200mil Height & 72-bit ECC

 

256MB, 32M x 72 ECC MODULE (M383(12)L3223ETS) (Populated as 1 bank of x8 DDR SDRAM MODULE)

512MB, 64M x 72 ECC MODULE (M383(12)L6423ETS) (Populated as 2 bank of x8 DDR SDRAM MODULE)

512MB, 64M x 72 ECC MODULE (M383(12)L6420ETS) (Populated as 1 bank of x4 DDR SDRAM MODULE)

1GB, 128M x 72 ECC MODULE [M383(12)L2828ET1(0)] (Populated as 2 bank of x4 DDR SDRAM MODULE)

 

 

Description : 64/68/80-Pin High-Performance, 64-Kbyte Enhanced Flash Microcontrollers with ECAN MODULE

DEVICE OVERVIEW
This document contains device specific information for the following devices:
    • PIC18F6585 • PIC18F8585
    • PIC18F6680 • PIC18F8680

PIC18F6X8X devices are available in 64-pin TQFP and 68-pin PLCC packages. PIC18F8X8X devices are available in the 80-pin TQFP package. They are differentiated from each other in four ways:
1. Flash program memory (48 Kbytes for PIC18FX585 devices, 64 Kbytes for PIC18FX680)
2. A/D channels (12 for PIC18F6X8X devices, 16 for PIC18F8X8X)
3. I/O ports (7 on PIC18F6X8X devices, 9 on PIC18F8X8X)
4. External program memory interface (present only on PIC18F8X8X devices)

High-Performance RISC CPU:
• Source code compatible with the PIC16 and PIC17 instruction sets
• Linear program memory addressing to 2 Mbytes
• Linear data memory addressing to 4096 bytes
• 1 Kbyte of data EEPROM
• Up to 10 MIPs operation:
    - DC – 40 MHz osc./clock input
    - 4 MHz-10 MHz osc./clock input with PLL active
• 16-bit wide instructions, 8-bit wide data path
• Priority levels for interrupts
• 31-level, software accessible hardware stack
• 8 x 8 Single-Cycle Hardware Multiplier

External Memory Interface (PIC18F8X8X Devices Only):
• Address capability of up to 2 Mbytes
• 16-bit interface

Peripheral Features:
• High current sink/source 25 mA/25 mA
• Four external interrupt pins
• Timer0 MODULE: 8-bit/16-bit timer/counter
• Timer1 MODULE: 16-bit timer/counter
• Timer2 MODULE: 8-bit timer/counter
• Timer3 MODULE: 16-bit timer/counter
• Secondary oscillator clock option – Timer1/Timer3
• One Capture/Compare/PWM (CCP) MODULE:
    - Capture is 16-bit, max. resolution 6.25 ns (TCY/16)
    - Compare is 16-bit, max. resolution 100 ns (TCY)
    - PWM output: PWM resolution is 1 to 10-bit
• Enhanced Capture/Compare/PWM (ECCP) MODULE:
    - Same Capture/Compare features as CCP
    - One, two or four PWM outputs
    - Selectable polarity
    - Programmable dead time
    - Auto-shutdown on external event
    - Auto-restart
• Master Synchronous Serial Port (MSSP) MODULE with two modes of operation:
    - 3-wire SPI (supports all 4 SPI modes)
    - I2C™ Master and Slave mode
 • Enhanced Addressable USART MODULE:
    - Supports RS-232, RS-485 and LIN 1.2
    - Programmable wake-up on Start bit
    - Auto-baud detect
• Parallel Slave Port (PSP) MODULE
(Continue ...)

Part Name(s) : XP133A0245SR
Torex
TOREX SEMICONDUCTOR
Description : Power MOS FET

■General Description
The XP133A0245SR is an N-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics. Two FET devices are built into the one package.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
The small SOP-8 package makes high density mounting possible.

◆ N-Channel Power MOS FET
◆ DMOS Structure
◆ Low On-State Resistance: 0.045Ω (max)
◆ Ultra High-Speed Switching
◆ SOP-8 Package
◆ Two FET Devices Built-in

■ Features
    Low on-state resistance : Rds(on)=0.045Ω (Vgs=4.5V) : Rds(on)=0.060Ω (Vgs=2.5V) : Rds(on)=0.1Ω (Vgs=1.5V)
    Ultra high-speed switching
    Operational Voltage : 1.5V
    High density mounting : SOP-8

■ Applications
● Notebook PCs
● Cellular and portable phones
● On-board power supplies
● Li-ion battery systems

Part Name(s) : UPA573T
NEC
NEC => Renesas Technology
Description : P-CHANNEL MOS FET (5-PIN 2 CIRCUITS) FOR SWITCHING

P-CHANNEL MOS FET (5-PIN 2 CIRCUITS) FOR SWITCHING

The µPA573T is a super-mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs.

FEATURES
• Two source common MOS FET circuits in package the same size as SC-70
• Directly driven by ICs having a 3 V power supply
• Automatic mounting supported

Part Name(s) : 3SK1132 3SK1132-T
NEC
NEC => Renesas Technology
Description : N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

The 3SK1132, N-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power source.
The MOS FET has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuits.

FEATURES
● Directly driven by ICs having a 5 V power source.
● Not necessary to consider driving current because of its high input impedance.
● Possible to reduce the number of parts by omitting the bias resistor.
● Can be replaced with any resistor self-contained type transistor.
● Can be used complementarily with the 2SJ165.

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