datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

P/N + Description + Content Search

Search Word's :
Part Name(s) : PF0140
Hitachi
Hitachi -> Renesas Electronics
Description : MOS FET Power Amplifier MODULE for GSM Handy Phone

MOS FET Power Amplifier MODULE for GSM Handy Phone

Part Name(s) : PF0031
Hitachi
Hitachi -> Renesas Electronics
Description : MOS FET Power Amplifier MODULE for Mobile Phone

MOS FET Power Amplifier MODULE for Mobile Phone

Features
•  High stability: Load VSWR ≈ 20:1
•  Low power control current: 400 µA
•  Thin package: 5 mm t

Application
PF0031: For NMT900 890 to 925 MHz

Part Name(s) : UPA602T
NEC
NEC => Renesas Technology
Description : N-CHANNEL MOS FET (6-PIN 2 CIRCUITS)

N-CHANNEL MOS FET (6-PIN 2 CIRCUITS)

The µPA602T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs.

FEATURES
• Two MOS FET circuits in package the same size as SC-59
• Complement to µPA603T
• Automatic mounting supported

Part Name(s) : UPA606T
NEC
NEC => Renesas Technology
Description : N-CHANNEL MOS FET (6-PIN 2 CIRCUITS) FOR SWITCHING

N-CHANNEL MOS FET (6-PIN 2 CIRCUITS) FOR SWITCHING

The µPA606T is a mini-mold device provided with two MOS FET elements. It achieves high-density mounting and saves mounting costs.

FEATURES
• Two MOS FET elements in package the same size as SC-59
• Complement to µPA607T
• Automatic mounting supported

Part Name(s) : UPA607T
NEC
NEC => Renesas Technology
Description : P-CHANNEL MOS FET (6-PIN 2 CIRCUITS) FOR SWITCHING

P-CHANNEL MOS FET (6-PIN 2 CIRCUITS) FOR SWITCHING

The µPA607T is a mini-mold device provided with two MOS FET elements. It achieves high-density mounting and saves mounting costs.

FEATURES
• Two MOS FET elements in package the same size as SC-59
• Complement to µPA606T
• Automatic mounting supported

Part Name(s) : PF0313 PF0314
Hitachi
Hitachi -> Renesas Electronics
Description : MOS FET Power Amplifier MODULE for VHF Band

MOS FET Power Amplifier MODULE for VHF Band

Features
•  Small package: 30 ×10 ×5.9 mm
•  Low operation voltage: 7 W at 7.2 V
•  High efficiency: 55% Typ
•  Low power control current: 0.5 mA Max

Part Name(s) : UPA572T
NEC
NEC => Renesas Technology
Description : N-CHANNEL MOS FET (5-PIN 2 CIRCUITS) FOR SWITCHING

N-CHANNEL MOS FET (5-PIN 2 CIRCUITS) FOR SWITCHING

The µPA572T is a super-mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs.

FEATURES
• Two source common MOS FET circuits in package the same size as SC-70
• Directly driven by 3 V power supply
• Automatic mounting supported

NEC
NEC => Renesas Technology
Description : P-CHANNEL MOS FET FOR SWITCHING

P-CHANNEL MOS FET FOR SWITCHING

The 2SJ197, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output ICs having a 5V power source.
AS the MOS FET has low on-state resistance and excellent switching characteristic, it is suitable for driving actuators such as motors, relays, and solenoids.

Part Name(s) : UPA573T
NEC
NEC => Renesas Technology
Description : P-CHANNEL MOS FET (5-PIN 2 CIRCUITS) FOR SWITCHING

P-CHANNEL MOS FET (5-PIN 2 CIRCUITS) FOR SWITCHING

The µPA573T is a super-mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs.

FEATURES
• Two source common MOS FET circuits in package the same size as SC-70
• Directly driven by ICs having a 3 V power supply
• Automatic mounting supported

Part Name(s) : UPA603T
NEC
NEC => Renesas Technology
Description : P-CHANNEL MOS FET (6-PIN 2 CIRCUITS)

P-CHANNEL MOS FET (6-PIN 2 CIRCUITS)

The µPA603T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs.

FEATURES
• Two MOS FET circuits in package the same size as SC-59
• Complement to µPA602T
• Automatic mounting supported

12345678910 Next

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]