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Part Name(s) : LET9045S	STMicroelectronics
Description : RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE	View
DESCRIPTION The LET9045S is a common source N-Channel, enhancement-mode lateral Field-Effect RF POWER transistor. It is designed for high gaIN, broad band commercial and INdustrial applications. It operates at 28 V IN common source mode at frequencies up to 1 GHz. LET9045S boasts the excellent gaIN, lINearity and reliability of ST’s latest LDMOS TECHNOLOGY mounted IN the first true SMD PLASTIC RF POWER PACKAGE, POWERSO-10RF. LET9045S’s superior lINearity peRFormance makes it an ideal solution for base station applications. N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gaIN MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE • HIGH GAIN • ESD PROTECTION • AVAILABLE IN TAPE & REEL with TR SUFFIX

Part Name(s) : LET21008	STMicroelectronics
Description : RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE	View
DESCRIPTION The LET21008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF POWER transistor. It is designed for high gaIN, broad band commercial and INdustrial applications. It operates at 26 V IN common source mode at frequencies up to 2.1 GHz. LET21008 boasts the excellent gaIN, lINearity and reliability of ST’s latest LDMOS TECHNOLOGY mounted IN the INnovative leadless SMD PLASTIC PACKAGE, PoweRFLAT™. LET21008’s superior lINearity peRFormance makes it an ideal solution for base station applications. Designed for GSM / EDGE / IS-97 / WCDMA applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 11 dB gaIN @ 2170 MHz / 26V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION

Part Name(s) : LET21004	STMicroelectronics
Description : RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE	View
DESCRIPTION The LET21004 is a common source N-Channel, enhancement-mode lateral Field-Effect RF POWER transistor. It is designed for high gaIN, broad band commercial and INdustrial applications. It operates at 26 V IN common source mode at frequencies up to 2.1 GHz. LET21004 boasts the excellent gaIN, lINearity and reliability of ST’s latest LDMOS TECHNOLOGY mounted IN the INnovative leadless SMD PLASTIC PACKAGE, PoweRFLAT™. LET21004’s superior lINearity peRFormance makes it an ideal solution for base station applications. Designed for GSM / EDGE / IS-97 / WCDMA applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 4 W with 11 dB gaIN @ 2170 MHz / 26 V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION

Part Name(s) : LET9006	STMicroelectronics
Description : RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE	View
DESCRIPTION The LET9006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF POWER transistor. It is designed for high gaIN, broad band commercial and INdustrial applications. It operates at 26 V IN common source mode at frequencies up to 1 GHz. LET9006 boasts the excellent gaIN, lINearity and reliability of ST’s latest LDMOS TECHNOLOGY mounted IN the INnovative leadless SMD PLASTIC PACKAGE, PoweRFLAT™. It is ideal for digital cellular BTS applications requirINg high lINearity. N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 6 W with 17 dB gaIN @ 960 MHz / 26V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION • SUPPLIED IN TAPE & REEL OF 3K UNITS

Part Name(s) : LET9002	STMicroelectronics
Description : RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE	View
DESCRIPTION The LET9002 is a common source N-Channel, enhancement-mode lateral Field-Effect RF POWER transistor designed for broadband commercial and INdustrial applications at frequencies up to 1000 MHz. The LET9002 is designed for high gaIN and broadband peRFormance operatINg IN common source mode at 26 V. LET9002 boasts the excellent gaIN, lINearity and reliability of ST’s latest LDMOS TECHNOLOGY mounted IN the INnovative leadless SMD PLASTIC PACKAGE, PoweRFLAT™. It is ideal for digital cellular BTS applications requirINg high lINearity. N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 2 W with 17 dB gaIN @ 960 MHz / 26 V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION • SUPPLIED IN TAPE & REEL OF 3K UNITS

Part Name(s) : LET9060C	STMicroelectronics
Description : RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY	View
DESCRIPTION The LET9060C is an N-Channel enhancement-mode lateral Field-Effect RF POWER transistor, designed for high gaIN broadband, commercial and INdustrial applications. It operates at 28 V IN common source mode at frequencies up to 1.0 GHz. LET9060C boasts the excellent gaIN, lINearity and reliability of the ST latest LDMOS TECHNOLOGY. Its superior peRFormances make it an ideal solution for base station applications. N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W WITH 17.3 dB gaIN @ 945 MHz • BeO FREE PACKAGE • HIGH GAIN • ESD PROTECTION

Part Name(s) : LC821	Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR	View
General Description Silicon VDMOS and LDMOS TRANSISTORS designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and PagINg Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet"™ process features low feedback and output capacitances resultINg IN high Ft TRANSISTORS with high INput impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 8.0 Watts SINgle Ended PACKAGE Style AC HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

Part Name(s) : LK721	Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR	View
General Description Silicon VDMOS and LDMOS TRANSISTORS designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and PagINg Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resultINg IN high Ft TRANSISTORS with high INput impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 35.0 Watts Push - Pull PACKAGE Style AK HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

Part Name(s) : LC801	Polyfet RF Devices
Description : SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR	View
General Description Silicon VDMOS and LDMOS TRANSISTORS designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and PagINg Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resultINg IN high Ft TRANSISTORS with high INput impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 20.0 Watts SINgle Ended PACKAGE Style AC HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

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