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Integral
Integral Corp.
Description : Quad 2-Input NAND Gate with Open-Drain Outputs High-Performance Silicon-Gate CMOS

Quad 2-Input NAND Gate with Open-Drain Outputs High-Performance Silicon-Gate CMOS

The IN74HC03A is identical in pinout to the LS/ALS03. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LS/ALSTTL outputs.
The IN74HC03A NAND Gate has, as its output, a high-performance MOS N-Channel transistor. This NAND Gate can, therefore, with a suitable pullup resistor, be used in wired-AND applications.

• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2.0 to 6.0 V
• Low Input Current: 1.0 µA
• High Noise Immunity Characteristic of CMOS Devices

SLS
System Logic Semiconductor
Description : Quad 2-Input NAND Gate with Open-Drain Outputs High-Performance Silicon-Gate CMOS

Quad 2-Input NAND Gate with Open-Drain Outputs
High-Performance Silicon-Gate CMOS

The SL74HC03 is identical in pinout to the LS/ALS03. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LS/ALSTTL outputs.
The SL74HC03 NAND Gate has, as its output, a high-performance MOS N-Channel transistor. This NAND Gate can, therefore, with a suitable pullup resistor, be used in wired-AND applications.

 • Outputs Directly Interface to CMOS, NMOS, and TTL
 • Operating Voltage Range: 2.0 to 6.0 V
 • Low Input Current: 1.0 μA
 • High Noise Immunity Characteristic of CMOS Devices

Fairchild
Fairchild Semiconductor
Description : Quad 2-Input NAND Gate . Quad 2-Input NOR Gate . Hex Inverter

74C00 Quad 2-Input NAND Gate 
74C02 Quad 2-Input NOR Gate
74C04 Hex Inverter
74C08 Quad 2-Input AND Gate 
 

 

INTE-ElectronicGRAL
Integral Corp.
Description : Quad 2-Input NAND Gate High-Performance Silicon-Gate CMOS

Quad 2-Input NAND Gate High-Performance Silicon-Gate CMOS

The IN74HCT00A may be used as a level converter for interfacing TTL or NMOS outputs to high-speed CMOS inputs.
The IN74HCT00A is identical in pinout to the LS/ALS00.

• TTL/NMOS-Compatible Input Levels.
• Outputs Directly Inferface to CMOS, NMOS and TTL.
• Operating Voltage Range: 4.5 to 5.5 V
• Low Input Current: 1.0 µA

INTE-ElectronicGRAL
Integral Corp.
Description : Quad 2-Input NAND Gate High-Speed Silicon-Gate CMOS

Quad 2-Input NAND Gate High-Speed Silicon-Gate CMOS

The IN74AC00 is identical in pinout to the LS/ALS00, HC/HCT00. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LS/ALS outputs.

• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2.0 to 6.0 V
• Low Input Current: 1.0 µA; 0.1 µA @ 25°C
• High Noise Immunity Characteristic of CMOS Devices
• Outputs Source/Sink 24 mA

System-Logic
System Logic Semiconductor
Description : Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS

Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS

The SL4011B NAND Gates provide the system designer with direct emplementation of the NAND function.

 • Operating Voltage Range: 3.0 to 18 V
 • Maximum input current of 1 μA at 18 V over full package temperature range; 100 nA at 18 V and 25°C
 • Noise margin (over full package temperature range):
    1.0 V min @ 5.0 V supply
    2.0 V min @ 10.0 V supply
    2.5 V min @ 15.0 V supply

SLS
System Logic Semiconductor
Description : Quad 2-Input NAND Gate High-Performance Silicon-Gate CMOS

Quad 2-Input NAND Gate
High-Performance Silicon-Gate CMOS

The SL74HCT00 may be used as a level converter for interfacing TTL or NMOS outputs to high-speed CMOS inputs.
The SL74HCT00 is identical in pinout to the LS/ALS00.

 • TTL/NMOS-Compatible Input Levels.
 • Outputs Directly Inferface to CMOS, NMOS and TTL.
 • Operating Voltage Range: 4.5 to 5.5 V
 • Low Input Current: 1.0 μA

System-Logic
System Logic Semiconductor
Description : Quad 2-Input NAND Gate with Schmitt-Trigger Inputs High-Performance Silicon-Gate CMOS

Quad 2-Input NAND Gate with Schmitt-Trigger Inputs
High-Performance Silicon-Gate CMOS

The SL74HC132 is identical in pinout to the LS/ALS132. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LS/ALSTTL outputs.
The SL74HC132 can be used to enhance noise immunity or to square up slowly changing waveforms.

 • Outputs Directly Interface to CMOS, NMOS, and TTL
 • Operating Voltage Range: 2.0 to 6.0 V
 • Low Input Current: 1.0 μA
 • High Noise Immunity Characteristic of CMOS Devices

Part Name(s) : MC74LCX00M
ON-Semiconductor
ON Semiconductor
Description : Low-Voltage CMOS Quad 2-Input NAND Gate

Low-Voltage CMOS Quad 2-Input NAND Gate
With 5V–Tolerant Inputs
   
The MC74LCX00 is a high performance, Quad 2–input NAND Gate operating from a 2.3 to 3.6V supply. High impedance TTL compatible inputs significantly reduce current loading to input drivers while TTL compatible outputs offer improved switching noise performance. A VI specification of 5.5V allows MC74LCX00 inputs to be safely driven from 5V devices.
Current drive capability is 24mA at the outputs.
   
• Designed for 2.3 to 3.6V VCC Operation
• 5V Tolerant Inputs — Interface Capability With 5V TTL Logic
• LVTTL Compatible
• LVCMOS Compatible
• 24mA Balanced Output Sink and Source Capability
• Near Zero Static Supply Current (10µA) Substantially Reduces
    System Power Requirements
• Latchup Performance Exceeds 500mA
• ESD Performance: Human Body Model >2000V; Machine Model >200V
   

INTE-ElectronicGRAL
Integral Corp.
Description : Quad 2-Input NAND Gate with Open-Drain Outputs

Quad 2-Input NAND Gate with Open-Drain Outputs High-Performance Silicon-Gate CMOS

The IN74HC03A is identical in pinout to the LS/ALS03. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LS/ALSTTL outputs.
The IN74HC03A NAND Gate has, as its output, a high-performance MOS N-Channel transistor. This NAND Gate can, therefore, with a suitable pullup resistor, be used in wired-AND applications.

• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2.0 to 6.0 V
• Low Input Current: 1.0 µA
• High Noise Immunity Characteristic of CMOS Devices

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