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Part Name(s) : HCF4016B HCF4016BEY HCF4016BM1 HCF4016M013TR ST-Microelectronics
STMicroelectronics
Description : QUAD BILATERAL SWITCH View

DESCRIPTION
The HCF4016B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. The HCF4016B is a QUAD BILATERAL SWITCH
intended for the transmission or multiplexing of analog or digital signals. Each of the four independent BILATERAL SWITCHes has a single control signal input which simultaneously biases both the p and n device in a given SWITCH ON or OFF.

Part Name(s) : CD4016BC CD4016BM CD4016CJ CD4016CN CD4016MJ National-Semiconductor
National ->Texas Instruments
Description : QUAD BILATERAL SWITCH View

General Description
The CD4016BM/CD4016BC is a QUAD BILATERAL SWITCH in tended for the transmission or multiplexing of analog or digital signals. It is pin-for-pin compatible with CD4066BM/CD4066BC.

 

Part Name(s) : M74HC4066 M74HC4066B1R M74HC4066M1R M74HC4066RM13TR M74HC4066TTR ST-Microelectronics
STMicroelectronics
Description : QUAD BILATERAL SWITCH View

DESCRIPTION
The M74HC4066 is an high speed CMOS QUAD BILATERAL SWITCH fabricated with silicon gate C2MOS technology.
The C input is provided to control the SWITCH; the SWITCH is on when the C input is held high and off when C is held low.

■ HIGH SPEED: tPD = 7ns (TYP.) at VCC = 6V
■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C
■ LOW "ON" RESISTANCE: RON = 50Ω TYP. AT VCC = 9V, II/O = 100 µA
■ WIDE OPERATING VOLTAGE RANGE VCC (OPR) = 2V TO 12V
■ SINE WAVE DISTORTION: 0.042% at VCC = 4V f = 1KHz
■ HIGH NOISE IMMUNITY: VNIH = VNIL = 28 % VCC (MIN.)
■ PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 4066

Part Name(s) : M54HC4066 M74HC4066 M54HC4066F1R M74HC4066M1R M74HC4066B1R M74HC4066C1R STMICROELECTRONICS
STMicroelectronics
Description : QUAD BILATERAL SWITCH View

DESCRIPTION
The M54/74HC4066 is a high speed CMOS QUAD BILATERAL SWITCH fabricated in silicon gate C2MOS technology. It has high speed performance combined with true CMOS low power consumption.
The C input is provided to control the SWITCH ; the SWITCH is ON when the C input is held high and off when C is held low.

■ HIGH SPEED tPD = 7 ns (TYP.) AT VCC = 5 V
■ LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C
■ HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.)
■ LOW ”ON” RESISTANCE RON = 50 Ω (TYP.) AT VCC = 9 V, II/O = 100 µA
■ SINE WAVE DISTORTION
■ 0.042% (TYP.) AT VCC = 4V f = 1KHz
■ WIDE OPERATING VOLTAGE RANGE VCC (OPR) = 2 V TO 12 V
■ PIN AND FUNCTION COMPATIBLE WITH 4066B


Part Name(s) : 4066 M54HC4066D1 M54HC4066K1 ST-Microelectronics
STMicroelectronics
Description : RAD-HARD QUAD BILATERAL SWITCH View

DESCRIPTION
The M54HC4066 is an high speed CMOS QUAD BILATERAL SWITCH fabricated with silicon gate
C2MOS technology. The C input is provided to control the SWITCH; the SWITCH is on when the C input is held high and off when C is held low.

■ HIGH SPEED: tPD= 7ns (TYP.) at VCC=6V
■ LOW POWER DISSIPATION: ICC=1µA(MAX.) at TA=25°C
■ LOW "ON" RESISTANCE: RON=50ΩTYP. AT VCC=9V,II/O =100µA
■ WIDE OPERATING VOLTAGE RANGE VCC(OPR) = 2V TO 12V
■ SINE WAVE DISTORTION: 0.042% at VCC=4Vf=1KHz
■ HIGH NOISE IMMUNITY: VNIH=VNIL= 28% VCC(MIN.)
■ PIN AND FUNCTION COMPATIBLE WITH 54 SERIES 4066
■ SPACE GRADE-1: ESA SCC QUALIFIED
■ 50 krad QUALIFIED, 100 krad AVAILABLE ON REQUEST
■ NO SEL UNDER HIGH LET HEAVY IONS IRRADIATION
■ DEVICE FULLY COMPLIANT WITH SCC-9408-052

 

Part Name(s) : 74LVQ4066T ST-Microelectronics
STMicroelectronics
Description : QUAD BILATERAL SWITCH View

DESCRIPTION
The LVQ4066 is a low voltage CMOS QUAD BILATERAL SWITCH fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.It is ideal for low power and low noise 3.3V applications.

■ HIGH SPEED:
    tPD = 0.4 ns (TYP.) at VCC = 3.3V
    tPD = 0.1 ns (TYP.) at VCC = 5V
■ LOW POWER DISSIPATION: ICC =2 µA (MAX.) at TA = 25 oC
■ LOW ”ON” RESISTANCE:
    RON = 20Ω at VCC = 3.3V,II/O ≤ 1mA
    RON = 12Ω at VCC = 5V, II/O ≤ 1mA
■ SINE WAVE DISTORTION: 0.04% at VCC = 3.3V,f = 1KHz
■ OPERATING VOLTAGERANGE: VCC(OPR) = 2V to 5V
■ PIN AND FUNCTION COMPATIBLEWITH 74 SERIES 4066
■ IMPROVED LATCH-UP IMMUNITY

Part Name(s) : M74HC4016 M74HC4016B1R M74HC4016M1R M74HC4016RM13TR M74HC4016TTR ST-Microelectronics
STMicroelectronics
Description : QUAD BILATERAL SWITCH View

DESCRIPTION
The M74HC4016 is an high speed CMOS QUAD BILATERAL SWITCH fabricated with silicon gate C2MOS technology.
   
■ HIGH SPEED:
    tPD = 9ns (TYP.) at VCC = 6V
■ LOW POWER DISSIPATION:
    ICC = 1µA(MAX.) at TA=25°C
■ LOW "ON" RESISTANCE:
    RON = 60Ω TYP. AT VCC = 9V, II/O = 100 µA
■ WIDE OPERATING VOLTAGE RANGE
    VCC (OPR) = 2V TO 12V
■ SINE WAVE DISTORTION:
    0.042% at VCC = 9Vpp , f = 1KHz
■ HIGH NOISE IMMUNITY:
    VNIH = VNIL = 28 % VCC (MIN.)
■ PIN AND FUNCTION COMPATIBLE WITH
    74 SERIES 4016

Part Name(s) : MC14016B MC14016BCL MC14016BCP MC14016BD Motorola
Motorola => Freescale
Description : QUAD Analog SWITCH/QUAD Multiplexer View

QUAD Analog SWITCH/QUAD Multiplexer

The MC14016B QUAD BILATERAL SWITCH is constructed with MOS P–channel andN–channel enhancement mode devices in asingle monolithic structure. EachMC14016B consists of four independent SWITCHes capable of controlling either digital or analog signals. The QUAD BILATERAL SWITCH is used insignal gating, chopper, modulator, demodulator and CMOS logic implementation.

• Diode Protection on All Inputs
• Supply Voltage Range = 3.0 Vdc to 18 Vdc
• Linearized Transfer Characteristics
• Low Noise — 12 nV/√Cycle, f ≥1.0 kHz typical
• Pin–for–Pin Replacements for CD4016B, CD4066B (Note improved transfer characteristic design causes more parasitic coupling capacitance than CD4016)
• For Lower RON, Use The HC4016 High–Speed CMOS Device or The MC14066B
• This Device Has Inputs and Outputs Which Do Not Have ESD Protection. Antistatic Precautions Must Be Taken.

 

Part Name(s) : MC14016B MC14016BCPG MC14016BDG MC14016BDR2G MC14016BFELG ON-Semiconductor
ON Semiconductor
Description : QUAD Analog SWITCH/QUAD Multiplexer View

QUAD Analog SWITCH/QUAD Multiplexer

The MC14016B QUAD BILATERAL SWITCH is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. Each MC14016B consists of four independent SWITCHes capable of controlling either digital or analog signals. The QUAD BILATERAL SWITCH is used in signal gating, chopper, modulator, demodulator and CMOS logic implementation.

Features
•Diode Protection on All Inputs
•Supply Voltage Range = 3.0 Vdc to 18 Vdc
•Linearized Transfer Characteristics
•Low Noise −12 nV/√Cycle, f ≥1.0 kHz typical
•Pin−for−Pin Replacements for CD4016B, CD4066B (Note improved transfer characteristic design causes more parasitic coupling capacitance than CD4016)
•For Lower RON, Use The HC4016 High−Speed CMOS Device or The MC14066B
•This Device Has Inputs and Outputs Which Do Not Have ESD Protection. Antistatic Precautions Must Be Taken.
•These are Pb−Free Devices

 

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