datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

P/N + Description + Content Search

Search Word's :
ON-Semiconductor
ON Semiconductor
Description : Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK

Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK

Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb--Free Devices

Applications
• CPU Power Delivery
• DC--DC Converters
• Low Side Switching

ON-Semiconductor
ON Semiconductor
Description : Power MOSFET 30 V, 63 A, Single N--Channel, DPAK/IPAK

Power MOSFET 30 V, 63 A, Single N--Channel, DPAK/IPAK

Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb--Free Devices

Applications
• CPU Power Delivery
• DC--DC Converters
• Low Side Switching

Description : Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK

Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK

Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• AEC−Q101 Qualified and PPAP Capable − NVD4806N
• These Devices are Pb−Free and are RoHS Compliant

Applications
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching

Description : MOSFETPower, Single, N-Channel, DPAK/IPAK 30 V, 117 A

Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK

Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• AEC Q101 Qualified − NVD4804N
• These Devices are Pb−Free and are RoHS Compliant

Applications
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching

Description : MOSFETPower, Single, N-Channel, DPAK/IPAK 30 V, 63 A

Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK

Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• NVD Prefix for Automotive and Other Applications Requiring
    Unique Site and Control Change Requirements; AEC−Q101
    Qualified and PPAP Capable
• These are Pb−Free Devices

Applications
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching

Description : Power MOSFET 30 V, 88 A, Single N--Channel, DPAK/IPAK

Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb--Free Devices

Applications
• CPU Power Delivery
• DC--DC Converters
• Low Side Switching

ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAK STripFET™ II Power MOSFET

DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.08 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ LOW GATE CHARGE
■ LOW THRESHOLD DRIVE
■ THROUGH-HOLE IPAK (TO-251) Power PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252) Power PACKAGE IN TAPE & REEL (SUFFIX “T4")

APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT

ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 60V - 0.020 Ω - 28A IPAK/DPAK STripFET™ II Power MOSFET

DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.020Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ THROUGH-HOLE IPAK (TO-251) Power PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252) Power PACKAGE IN TAPE & REEL (SUFFIX “T4")

APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ MOTOR CONTROL , AUDIO AMPLIFIERS
■ SOLENOID AND RELAY DRIVERS
■ DC-DC & DC-AC CONVERTERS

STMICROELECTRONICS
STMicroelectronics
Description : N-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAK STripFET™ II Power MOSFET

DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
   
■ TYPICAL RDS(on) = 0.08Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ LOW GATE CHARGE
■ THROUGH-HOLE IPAK (TO-251) Power
    PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252)
    Power PACKAGE IN TAPE & REEL
    (SUFFIX “T4")
   
APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ MOTOR CONTROL , AUDIO AMPLIFIERS
■ SOLENOID AND RELAY DRIVERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT
   

STMICROELECTRONICS
STMicroelectronics
Description : N-CHANNEL 100V - 0.22 Ω - 6A IPAK/DPAK LOW GATE CHARGE STripFET™ Power MOSFET

DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highe fficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

■ TYPICAL RDS(on) = 0.22 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW THRESHOLD DRIVE
■ THROUGH-HOLE IPAK (TO-251) Power PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252) Power PACKAGE IN TAPE & REEL (SUFFIX “T4")

12345678910 Next

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]