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Part Name(s) : 4805NG NTD4805N NTD4805N-1G NTD4805N-35G NTD4805NT4G ON-Semiconductor
ON Semiconductor
Description : POWER MOSFET 30 V, 88 A, SINGLE N--CHANNEL, DPAK/IPAK View

Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb--Free Devices

Applications
• CPU POWER Delivery
• DC--DC Converters
• Low Side Switching

Part Name(s) : STD12NF06LT4_03 STD12NF06L_03 STD12NF06L-1_03 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 60V - 0.08 ? - 12A IPAK/DPAK STripFET? II POWER MOSFET View

DESCRIPTION
This POWER MOSFET is the latest development of STMicroelectronis unique "SINGLE Feature Size™" strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.08 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ LOW GATE CHARGE
■ LOW THRESHOLD DRIVE
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")

APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT

Part Name(s) : STD12NF06 STD12NF06-1 STD12NF06T4 STMICROELECTRONICS
STMicroelectronics
Description : N-CHANNEL 60V - 0.08 ? - 12A IPAK/DPAK STripFET? II POWER MOSFET View

DESCRIPTION
This POWER MOSFET is the latest development of STMicroelectronis unique "SINGLE Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
   
■ TYPICAL RDS(on) = 0.08Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ LOW GATE CHARGE
■ THROUGH-HOLE IPAK (TO-251) POWER
    PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252)
    POWER PACKAGE IN TAPE & REEL
    (SUFFIX “T4")
   
APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ MOTOR CONTROL , AUDIO AMPLIFIERS
■ SOLENOID AND RELAY DRIVERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT
   

Part Name(s) : STD6NF10 STD6NF10-1 STD6NF10T4 STMICROELECTRONICS
STMicroelectronics
Description : N-CHANNEL 100V - 0.22 ? - 6A IPAK/DPAK LOW GATE CHARGE STripFET? POWER MOSFET View

DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highe fficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

■ TYPICAL RDS(on) = 0.22 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW THRESHOLD DRIVE
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")


Part Name(s) : STD19NE06L STD19NE06L-1 STD19NE06L-T4 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 60V - 0.038 ? - 19A IPAK/DPAK STripFET? POWER MOSFET View

DESCRIPTION
This POWER MOSFET is the latest development of STMicroelectronis unique "SINGLE Feature Size™" strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.038 Ω
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RALAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS

Part Name(s) : STD16NE10 STD16NE10-1 STD16NE10T4 ST-Microelectronics
STMicroelectronics
Description : N - CHANNEL 100V - 0.07? - 16A - IPAK/DPAK STripFET? MOSFET View

DESCRIPTION
This POWER MOSFET is the latest development of SGS-THOMSON unique ”SINGLE Feature Size” strip-based process.The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.

■ TYPICAL RDS(on) = 0.07 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ AVALANCHERUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ APPLICATION ORIENTED CHARACTERIZATION
■ THROUG-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)

APPLICATIONS
■ DC MOTOR CONTROL (DISK DRIVERS,etc.)
■ DC-DC & DC-ACCONVERTERS
■ SYNCHRONOUS RECTIFICATION

 

Part Name(s) : STD30PF03L-1 STD30PF03LT4 D30PF03L ST-Microelectronics
STMicroelectronics
Description : P-channel 30 V - 0.025 ? - 24 A - DPAK / IPAK STripFET? II POWER MOSFET View

Description
This POWER MOSFET is the latest development of STMicroelectronics unique “SINGLE feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance and low gate charge.
   
Features   
■ Standard outline for easy automated surface
    mount assembly
■ Low threshold device
■ Low gate charge
   
Application
■ Switching applications
   

Part Name(s) : STD60N3LH5 STP60N3LH5 STU60N3LH5 60N3LH5 ST-Microelectronics
STMicroelectronics
Description : N-channel 30 V, 0.0072 ?, 48 A DPAK, IPAK, TO-220 STripFET? V POWER MOSFET View

Description
This STripFET™V POWER MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.

Features
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive POWER losses

Application
■ Switching applications

Part Name(s) : STD30NF06L STD30NF06L-1 STD30NF06LT4 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 60V - 0.022? - 35A DPAK/IPAK STripFET? POWER MOSFET View

DESCRIPTION
This POWER MOSFET is the latest development of STMicroelectronics unique “SINGLE Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.022Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ LOGIC LEVEL GATE DRIVE
■ ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL
■ ADD SUFFIX “-1” FOR ORDERING IN IPAK
■ CHARACTERIZATION ORIENTED FOR AUTOMOTIVE APPLICATIONS

APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE

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