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Part Name(s) : PAL007C PALOO7C
Pioneer Electronics
Description : Audio MOSFET / Pioneer PAL007C POWER MOSFET

PALOO7C -> Correct PartNumber : PAL007C


PAL007C ( equivalent TDA7386 datasheet PDF )


Part Name(s) : PA2032A
Pioneer Electronics
Description : Pioneer MOSFET

PA2032A Manu:Pioneer Package:ZIP


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Part Name(s) : PAL008A
Pioneer Electronics
Description : Pioneer MOSFET

Part Name(s) : PA2030A
Pioneer Electronics
Description : AB Class Audio Power Amplifier, MOSFET IC Power Amp

Pioneer PA2030A Info, PA2030A Forum

Part Name(s) : PAL007A
Pioneer Electronics
Description : Power AMP / B.C.D MOS

Part Name(s) : PAL007E
Pioneer Electronics
Description : Poineer MOSFET

PAL007 Car Audio AMP IC

Part Name(s) : BA49183 BA49183-V12
Description : Pioneer BA49183

Description : 72V, Overvoltage-Protection Switches/Limiter Controllers with an External MOSFET

General Description
The MAX6495–MAX6499 is a family of small, low-current, overvoltage-protection circuits for high-voltage transient systems such as those found in automotive and industrial applications. These devices monitor the input voltage and control an external n-channel MOSFET switch to isolate the load at the output during an input overvoltage condition. The MAX6495–MAX6499 operate over a wide supply voltage range from +5.5V to +72V.
The gate of the n-channel MOSFET is driven high while the monitored input is below the user-adjustable over voltage threshold. An integrated charge-pump circuit provides a 10V gate-to-source voltage to fully enhance the n-channel MOSFET. When the input voltage exceeds the user-adjusted overvoltage threshold, the gate of the MOSFET is quickly pulled low, disconnect ing the load from the input. In some applications, dis connecting the output from the load is not desirable. In these cases, the protection circuit can be configured to act as a voltage limiter where the GATE output saw tooths to limit the voltage to the load (MAX6495/MAX6496/MAX6499).
The MAX6496 supports lower input voltages and reduces power loss by replacing the external reverse battery diode with an external series p-channel MOSFET. The MAX6496 generates the proper bias voltage to ensure that the p-channel MOSFET is on during normal operations. The gate-to-source voltage is clamped during load-dump conditions, and the p-channel MOSFET is off during reverse-battery conditions.
The MAX6497/MAX6498 feature an open-drain, undedicated comparator that notifies the system if the output falls below the programmed threshold. The MAX6497 keeps the MOSFET switch latched off until either the input power or the SHDN pin is cycled. The MAX6498 will autoretry when VOVSET falls below 130mV.
These devices are available in small, thermally enhanced, 6-pin and 8-pin TDFN packages and are fully specified from -40°C to +125°C.

♦ Wide Supply Voltage Range: +5.5V to +72V
♦ Overvoltage-Protection Switch Controller Allows
   User to Size External n-Channel MOSFETs
♦ Fast Gate Shutoff During Overvoltage with 100mA
   Sink Capability
♦ Internal Charge-Pump Circuit Ensures 10V
   Gate-to-Source Enhancement for Low RDS(ON)
♦ n-Channel MOSFET Latches Off After an
   Overvoltage Condition (MAX6497/MAX6499)
♦ Adjustable Overvoltage Threshold
♦ Thermal Shutdown Protection
♦ Supports Series p-Channel MOSFET for Reverse
   Battery Voltage Protection (MAX6496)
♦ POK Indicator (MAX6497/MAX6498)
♦ Adjustable Undervoltage Threshold (MAX6499)
♦ -40°C to +125°C Operating Temperature Range
♦ Small, 3mm x 3mm TDFN Package

   Notebook Computers

Description : MOSFET drivers

MOSFET drivers

Integrated discrete MOSFET drivers combine several discrete products into one package to offer MOSFET driving functionality. With a choice of configurations Philips offers solutions to take load from the driving circuit, improve the efficiency of the MOSFET and enable design flexibility.

Key features
- Complete MOSFET driving functionality in
   one package
- Several configurations available

Key benefits
- Improved MOSFET efficiency by
   • Minimizing rise and fall time
   • Fast gate (dis-)charge of the driven
- Takes load from the driving circuit
   and thus minimizes the IC power dissipation
- More design flexibility: the control IC and
   the MOSFET do not have to be placed as
   close as possible anymore
- Cost-effective alternative to IC-solutions

Key applications
- MOSFET driver
- Bipolar power transistor driver
- Push-pull driver

Part Name(s) : FDPF8N60ZUT
Fairchild Semiconductor
Description : N-Channel UniFET™ II Ultra FRFET™ MOSFET

UniFET™ II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. UniFET II Ultra FRFET™ MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET II Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

• RDS(on) = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 3.25 A
• Low Gate Charge (Typ. 20 nC)
• Low Crss (Typ. 10 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant

• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply

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