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Pioneer Electronics
PA2032A Manu:Pioneer Package:ZIP
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Pioneer Electronics
PAL007 Car Audio AMP IC
Unspecified
Maxim Integrated
General Description
The MAX6495–MAX6499 is a family of small, low-current, overvoltage-protection circuits for high-voltage transient systems such as those found in automotive and industrial applications. These devices monitor the input voltage and control an external n-channel MOSFET switch to isolate the load at the output during an input overvoltage condition. The MAX6495–MAX6499 operate over a wide supply voltage range from +5.5V to +72V.
The gate of the n-channel MOSFET is driven high while the monitored input is below the user-adjustable over voltage threshold. An integrated charge-pump circuit provides a 10V gate-to-source voltage to fully enhance the n-channel MOSFET. When the input voltage exceeds the user-adjusted overvoltage threshold, the gate of the MOSFET is quickly pulled low, disconnect ing the load from the input. In some applications, dis connecting the output from the load is not desirable. In these cases, the protection circuit can be configured to act as a voltage limiter where the GATE output saw tooths to limit the voltage to the load (MAX6495/MAX6496/MAX6499).
The MAX6496 supports lower input voltages and reduces power loss by replacing the external reverse battery diode with an external series p-channel MOSFET. The MAX6496 generates the proper bias voltage to ensure that the p-channel MOSFET is on during normal operations. The gate-to-source voltage is clamped during load-dump conditions, and the p-channel MOSFET is off during reverse-battery conditions.
The MAX6497/MAX6498 feature an open-drain, undedicated comparator that notifies the system if the output falls below the programmed threshold. The MAX6497 keeps the MOSFET switch latched off until either the input power or the SHDN pin is cycled. The MAX6498 will autoretry when VOVSET falls below 130mV.
These devices are available in small, thermally enhanced, 6-pin and 8-pin TDFN packages and are fully specified from -40°C to +125°C.
Features
♦ Wide Supply Voltage Range: +5.5V to +72V
♦ Overvoltage-Protection Switch Controller Allows
User to Size External n-Channel MOSFETs
♦ Fast Gate Shutoff During Overvoltage with 100mA
Sink Capability
♦ Internal Charge-Pump Circuit Ensures 10V
Gate-to-Source Enhancement for Low RDS(ON)
Performance
♦ n-Channel MOSFET Latches Off After an
Overvoltage Condition (MAX6497/MAX6499)
♦ Adjustable Overvoltage Threshold
♦ Thermal Shutdown Protection
♦ Supports Series p-Channel MOSFET for Reverse
Battery Voltage Protection (MAX6496)
♦ POK Indicator (MAX6497/MAX6498)
♦ Adjustable Undervoltage Threshold (MAX6499)
♦ -40°C to +125°C Operating Temperature Range
♦ Small, 3mm x 3mm TDFN Package
Applications
Automotive
Industrial
Telecom/Servers/Networking
FireWire®
Notebook Computers
Philips Electronics
MOSFET drivers
Integrated discrete MOSFET drivers combine several discrete products into one package to offer MOSFET driving functionality. With a choice of configurations Philips offers solutions to take load from the driving circuit, improve the efficiency of the MOSFET and enable design flexibility.
Key features
- Complete MOSFET driving functionality in
one package
- Several configurations available
Key benefits
- Improved MOSFET efficiency by
• Minimizing rise and fall time
• Fast gate (dis-)charge of the driven
MOSFET
- Takes load from the driving circuit
and thus minimizes the IC power dissipation
- More design flexibility: the control IC and
the MOSFET do not have to be placed as
close as possible anymore
- Cost-effective alternative to IC-solutions
Key applications
- MOSFET driver
- Bipolar power transistor driver
- Push-pull driver
Fairchild Semiconductor
Description
UniFET™ II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. UniFET II Ultra FRFET™ MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET II Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Features
• RDS(on) = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 3.25 A
• Low Gate Charge (Typ. 20 nC)
• Low Crss (Typ. 10 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Applications
• LCD/LED TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
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