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Part Name(s) : APT50M50L2FLL APT
Advanced Power Technology
Description : POWER MOS 7™ FREDFET

POWER MOS 7™ FREDFET

POWER MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode POWER MOSFETS. Both conduction and switching losses are addressed with POWER MOS 7 by significantly lowering RDS(ON) and Qg. POWER MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APTs patented metal gate structure.

• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg 
• Increased POWER Dissipation
• Easier To Drive
• Popular TO-264 MAXPackage

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Part Name(s) : 2SK2137 K2137 NEC
NEC => Renesas Technology
Description : SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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Part Name(s) : APT1201R5BVR ADPOW
Advanced Power Technology
Description : 1200V 10A 1.500Ω POWER MOS

POWER MOS

POWER MOS V® is a new generation of high voltage N-Channel enhancement mode POWER MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. POWER MOS V® also achieves faster switching speeds through optimized gate layout.

• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular TO-247 Package

 

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Part Name(s) : APT1201R5BVR APT
Advanced Power Technology
Description : 1200V 10A 1.500Ω POWER MOS

POWER MOS

POWER MOS V® is a new generation of high voltage N-Channel enhancement mode POWER MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. POWER MOS V® also achieves faster switching speeds through optimized gate layout.

• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular TO-247 Package

 

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Part Name(s) : APT50M50JVR APT
Advanced Power Technology
Description : POWER MOS V® 500V 77A 0.050Ω

POWER MOS V® 500V 77A 0.050Ω

POWER MOS V® is a new generation of high voltage N-Channel enhancement mode POWER MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. POWER MOS
also achieves faster switching speeds through optimized gate layout.

• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular SOT-227 Package

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Part Name(s) : APT50M50 APT50M50PVR APT
Advanced Power Technology
Description : POWER MOS V® 500V 74.5A 0.050Ω

POWER MOS V® 500V 74.5A 0.050Ω

POWER MOS V® is a new generation of high voltage N-Channel enhancement mode POWER MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. POWER MOS V® also achieves faster switching speeds through optimized gate layout.

• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• New High POWER P-Pack Package

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Part Name(s) : APT50M50JLL APT
Advanced Power Technology
Description : POWER MOS 7® 500V 71A 0.050Ω

POWER MOS 7® 500V 71A 0.050Ω

POWER MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode POWER MOSFETS. Both conduction and switching losses are addressed with POWER MOS 7® by significantly lowering RDS(ON) and Qg . POWER MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.

• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased POWER Dissipation
• Easier To Drive
• Popular SOT-227 Package

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Part Name(s) : APT6029BLL APT6029SLL APT
Advanced Power Technology
Description : POWER MOS 7 MOSFET 600V 21A 0.290Ω

POWER MOS 7 MOSFET 600V 21A 0.290Ω

POWER MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode POWER MOSFETS. Both conduction and switching losses are addressed with POWER MOS 7® by significantly lowering RDS(ON) and Qg . POWER MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.

• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased POWER Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3 PAK Package

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Part Name(s) : APT5015BVFR APT5015SVFR APT
Advanced Power Technology
Description : POWER MOS V® FREDFET

POWER MOS V® FREDFET

POWER MOS V® is a new generation of high voltage N-Channel enhancement mode POWER MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. POWER MOS V® also achieves faster switching speeds through optimized gate layout.

• Faster Switching
• Avalanche Energy Rated
• Lower Leakage
• TO-247 or Surface Mount D3PAK Package
• Fast Recovery Body Diode

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Part Name(s) : APT6035BVFR APT6035SVFR APT
Advanced Power Technology
Description : POWER MOS V® FREDFET

POWER MOS V® FREDFET

POWER MOS V® is a new generation of high voltage N-Channel enhancement mode POWER MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. POWER MOS V® also achieves faster switching speeds through optimized gate layout.

• Faster Switching
• Avalanche Energy Rated
• Lower Leakage
• TO-247 or Surface Mount D3PAK Package
• FAST RECOVERY BODY DIODE

 

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