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○ Swtching Applications
○ Load Switch Applications
○ Multi-chip discrete device; built-in PNP Transistor for main switch and N-ch MOS FET for drive

• High DC current gain: hFE = 200 to 500 (IC = −0.5 A)
                                                       (PNP Transistor)
• Low collector-emitter saturation: VCE (sat) = −0.19 V (max)
                                                       (PNP Transistor)
• High-speed switching: tf = 40 ns (typ.) (PNP Transistor)

DESCRIPTION
The BD234 is a silicon epitaxial-base PNP power Transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications.

■ SGS-THOMSON PREFERRED SALESTYPE
■ PNP Transistor

SILICON PNP Transistor

• General Purpose PNP Silicon Transistor
• Low Power Amplifier Applications
• Hermetic TO18 Package
• Screening Options Available

PNP Epitaxial Silicon Transistor

Switching Transistor

PNP Epitaxial Silicon Transistor

Switching Transistor

DESCRIPTION
The MJE210 is a silicon Epitaxial-Base PNP Transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications.

■ STMicroelectronics PREFERRED SALESTYPE
■ PNP Transistor

MEDIUM POWER PNP SILICON Transistor

4 AMPERE POWER Transistor PNP SILICON 55 VOLTS 75 WATTS

PNP Germanium RF Transistor

for output, mixer, and oscillator stages up to 900 MHz

AF239S is a germanium PNP mesa Transistor in TO 72 case ( 18 A 4 DIN 41876).
The leads are electrically insulated from the case.

PNP Germanium RF Transistor

for UHF input states up to 900 MHz

AF 239 is a germanium PNP mesa Transistor in TO 72 case (18 A 4 DIN 41876).
The leads are electrically insulated from the case.

Silicon PNP Transistor Switching Transistor