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○ Swtching Applications
○ Load Switch Applications
○ Multi-chip discrete device; built-in PNP Transistor for main switch and N-ch MOS FET for drive

• High DC current gain: hFE = 200 to 500 (IC = −0.5 A)
                                                       (PNP Transistor)
• Low collector-emitter saturation: VCE (sat) = −0.19 V (max)
                                                       (PNP Transistor)
• High-speed switching: tf = 40 ns (typ.) (PNP Transistor)

DESCRIPTION
The BD234 is a silicon epitaxial-base PNP power Transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications.

■ SGS-THOMSON PREFERRED SALESTYPE
■ PNP Transistor

SILICON PNP Transistor

• General Purpose PNP Silicon Transistor
• Low Power Amplifier Applications
• Hermetic TO18 Package
• Screening Options Available

DESCRIPTION
The MJE210 is a silicon Epitaxial-Base PNP Transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications.

■ STMicroelectronics PREFERRED SALESTYPE
■ PNP Transistor

PNP SILICON Transistor

BF398 is PNP silicon Transistor designed for high voltage applications.

PNP SILICON Transistor

BF397 is PNP silicon Transistor designed for high voltage applications.

MEDIUM POWER PNP SILICON Transistor

4 AMPERE POWER Transistor PNP SILICON 55 VOLTS 75 WATTS

General description
PNP/PNP general-purpose double Transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package.

Features
■ General-purpose double Transistor
■ Board-space reduction
■ AEC-Q101 qualified

Applications
■ General-purpose switching and amplification

PNP SILICON Transistor

2SA561 is PNP silicon, planar Transistor designed for low power general purpose amplifiers.

SILICON PNP Transistor

• General Purpose PNP Silicon Transistor
• High Voltage, High Speed Saturated Switching
• Low Power Amplifier Applications
• Hermetic TO39 Package
• Screening Options Available