datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

P/N + Description + Content Search

Search Word's :
Description : Low-Noise Matched Transistor Array ICs

Description
The THAT 300, 320 and 340 are large geometry, 4-Transistor, monolithic NPN and/or PNP arrays. They exhibit both high speed and low noise, with excellent parameter matching between Transistors of the same gender. Typical base-spreading resistance is 25 Ω for the PNP devices (30 Ω for the low-gain NPNs), so their resulting voltage noise is under 1 nV/√Hz. This makes the 300 series ideally suited for low-noise amplifier input stages, log amplifiers, and many other applications. The four-NPN Transistor array is available in versions selected for hfe with minimums of 150 (300A) or 300 (300B).

FEATURES
• 4 Matched NPN Transistors
    º 300 typical hfe of 100
    º 300A minimum hfe of 150
    º 300B minimum hfe of 300
• 4 Matched PNP Transistors
    º 320 typical hfe of 75
• 2 Matched PNP and 2 Matched NPN Transistors
    º 340 PNP typical hfe of 75
    º 340 NPN typical hfe of 100
• Low Voltage Noise
    º 0.75 nV/ √Hz (PNP)
    º 0.8 nV/ √Hz (NPN)
• High Speed
    º fT = 350 MHz (NPN)
    º fT = 325 MHz (PNP)
• 500 μV matching between devices
• Dielectrically Isolated for low crosstalk and high DC isolation
• 36V VCEO

APPLICATIONS
• Low Noise Front Ends
• Microphone Preamplifiers
• Log/Antilog Amplifiers
• Current Sources
• Current Mirrors
• Multipliers

Description : Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar Transistor arrays. The ISL73096RH consists of three NPN Transistors and two PNP Transistors on a common substrate. The ISL73127RH consists of five NPN Transistors on a common substrate. The ISL73128RH consists of five PNP Transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment.

Features
• Electrically Screened to SMD # 5962-07218
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
   - Gamma Dose (γ) . . . . . . . . . . 3 x 105RAD(Si)
   - SEL Immune . . Bonded Wafer Dielectric Isolation
• NPN Gain Bandwidth Product (FT) . . . 8GHz (Typ)
• NPN Current Gain (hFE). . . . . . . . . . . . 130 (Typ)
• NPN Early Voltage (VA) . . . . . . . . . . . . 50V (Typ)
PNP Gain Bandwidth Product (FT) . . . 5.5GHz (Typ)
PNP Current Gain (hFE) . . . . . . . . . . . . . 60 (Typ)
PNP Early Voltage (VA) . . . . . . . . . . . . 20V (Typ)
• Noise Figure (50Ω) at 1GHz . . . . . . . . 3.5dB (Typ)
• Collector-to-Collector Leakage . . . . . . <1pA (Typ)
• Complete Isolation Between Transistors

Applications
• High Frequency Amplifiers and Mixers
   - Refer to Application Note AN1503
• High Frequency Converters
• Synchronous Detector

Part Name(s) : 8F01 TPCP8F01
Toshiba
Toshiba
Description : TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor, Field Effect Transistor Silicon N Cannel MOS Type

○ Swtching Applications
○ Load Switch Applications
○ Multi-chip discrete device; built-in PNP Transistor for main switch and N-ch MOS FET for drive

• High DC current gain: hFE = 200 to 500 (IC = −0.5 A)
                                                       (PNP Transistor)
• Low collector-emitter saturation: VCE (sat) = −0.19 V (max)
                                                       (PNP Transistor)
• High-speed switching: tf = 40 ns (typ.) (PNP Transistor)

Description : Low-Noise Matched Transistor Array ICs

DESCRIPTION
The THAT300 Series ICs are large-geometry monolithic NPN and/or PNP Transistor arrays which combine low noise, high speed and excellent parametric matching between devices of the same gender. The large geometries typically result in 25 Ω base spreading resistance for the PNP devices (30 Ω for the NPNs), producing 075 . nV√Hz voltage noise ( . 0 8 nV Hz for the NPNs). This makes the 300 Series an ideal choice for low-noise amplifier input stages.

FEATURES
 • 4 Matched NPN Transistors (300)
    4 Matched PNP Transistors (320)
    2 Matched NPNs and PNPs (340)
    4 Matched NP6N - 4 Matched PNP (380)
 • Monolithic Construction
 • Low Noise
    - 075 nV/√Hz PNP
    - 0 8 nV/√Hz NPN
 • High Speed
    - fT = 350 MHz (NPN)
    - fT = 325 MHz (PNP)
 • Excellent Matching – 500 V typical
    between devices of same gender
 • Dielectrically Isolated
 • 36V VCEO

APPLICATIONS
 • Microphone Preamplifiers
 • Current Sources
 • Current Mirrors
 • Log/Antilog Amplifiers
 • Multipliers
 • Servos

Description : Low-Noise Matched Transistor Array ICs

[THAT-Corporation]

DESCRIPTION
The THAT300 Series ICs are large-geometry monolithic NPN and/or PNP Transistor arrays which combine low noise, high speed and excellent parametric matching between devices of the same gender. The large geometries typically result in 25 Ω base spreading resistance for the PNP devices (30 Ω for the NPNs), producing 075 . nV√Hz voltage noise ( . 0 8 nV Hz for the NPNs). This makes the 300 Series an ideal choice for low-noise amplifier input stages.

FEATURES
 • 4 Matched NPN Transistors (300)
    4 Matched PNP Transistors (320)
    2 Matched NPNs and PNPs (340)
    4 Matched NP6N - 4 Matched PNP (380)
 • Monolithic Construction
 • Low Noise
    - 075 nV/√Hz PNP
    - 0 8 nV/√Hz NPN
 • High Speed
    - fT = 350 MHz (NPN)
    - fT = 325 MHz (PNP)
 • Excellent Matching – 500 V typical
    between devices of same gender
 • Dielectrically Isolated
 • 36V VCEO

APPLICATIONS
 • Microphone Preamplifiers
 • Current Sources
 • Current Mirrors
 • Log/Antilog Amplifiers
 • Multipliers
 • Servos

Part Name(s) : THAT140
THAT-Corporation
THAT Corporation
Description : Quad Low-Noise NPN / PNP Transistor Array

DESCRIPTION
THAT140 is a quad, large-geometry monolithic NPN/PNP Transistor array which combines low noise, high speed and excellent parametric matching. The large geometries typically result in 25 Ω base spread ing resistance for the PNP devices (30 Ω for the NPNs), producing 0.75 nV Hz voltage noise (0.8 nV Hz for the NPNs). This makes these parts an ideal choice for low-noise amplifier input stages.
FEATURES
• Two Matched NPN Transistors
  Two Matched PNP Transistors
• Monolithic Construction
• Low Noise
    — 0.75 nV/ Hz (PNP)
    — 0.8 nV/ Hz (NPN)
• High Speed
    — ft= 350 MHz (NPN)
    — ft= 325 MHz (PNP)
• Excellent Matching - 500 μV typ
• Dielectrically Isolated
• 25 V VCEO

APPLICATIONS
• Microphone Preamplifiers
• Tape Head Preamplifiers
• Current Sources
• Current Mirrors
• Log/Antilog Amplifiers
• Multipliers

 

Description : Ultra High Frequency Transistor Arrays

The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated Transistors on a common monolithic substrate. The NPN Transistors exhibit a fT of 8GHz while the PNP Transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications.

Features
• NPN Transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
• NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . 130
• NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 50V
PNP Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 60
PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 20V
• Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB
• Collector-to-Collector Leakage. . . . . . . . . . . . . . . . . <1pA
• Complete Isolation Between Transistors
• Pin Compatible with Industry Standard 3XXX Series
   Arrays

Applications
• VHF/UHF Amplifiers
• VHF/UHF Mixers
• IF Converters
• Synchronous Detectors

Description : Ultra High Frequency Transistor Arrays

The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated Transistors on a common monolithic substrate. The NPN Transistors exhibit a fT of 8GHz while the PNP Transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications.

Features
• NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
• NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 130
• NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 50V
PNP Transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . . 60
PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . .20V
• Noise Figure (50) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB
• Collector to Collector Leakage . . . . . . . . . . . . . . . . . .<1pA
• Complete Isolation Between Transistors
• Pin Compatible with Industry Standard 3XXX Series
   Arrays
• Pb-Free (RoHS Compliant)

Applications
• VHF/UHF Amplifiers
• VHF/UHF Mixers
• IF Converters
• Synchronous Detectors

Astec
Astec Semiconductor => Silicon Link
Description : Semicustom Bipolar Array

Description
The AS17xx is Astec’s proprietary semicustom bipolar array. This semicustom IC is a collection of individual Transistors and resistors in a fixed configuration. The custom circuit is manufactured by creating a single metal mask to connect the components. This allows the designer to deal with only one mask for the IC layout instead of the actual 10 mask process.

Features
Size (single tile)
• 87 x 75 mils Expandability of array (to 2 or 4 tiles)
Component Availability (single tile)
• Small NPN 48
• Dual collector PNP 21
• Vertical PNP 4
• Power NPN 3
• Diffused Resistors (total) ≈300 kΩ
• Pinch Resistors (3-terminal, 30kΩ) 8
• Cross-unders 13
• Buses 6

Basic Electrical Specs
Transistor Matching (NPN & PNP) <2%
• Primary voltage limitations:
   LVCEO 18 V
   BVCBO 30 V
• Diffusion to substrate
   (Ground) 30 V
• NPN Parameters
   Beta 80–500
   fT(1mA) 300 MHz
   BVEBO 7 V
PNP Parameters:
   Beta 20–300
   fT(1mA) 300 MHz
   BVEBO 30 V

Part Name(s) : 100100 BC857QAS
NXP
NXP Semiconductors.
Description : 45 V, 100 mA PNP/PNP general-purpose Transistor

General description
PNP/PNP general-purpose Transistor in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package.
NPN/NPN complement: BC847QAS.
NPN/PNP complement: BC847QAPN.

Features and benefits
• Reduces component count
• Reduces pick and place costs
• AEC-Q101 qualified
• Low package height of 0.37 mm

Applications
• General-purpose switching and amplification
• Mobile applications

12345678910 Next

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]