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Part Name(s) : N3PF06 STN3PF06 ST-Microelectronics
STMicroelectronics
Description : P-CHANNEL 60 V - 0.20 ?- 2.5 A - SOT-223 STRIPFET? II POWER MOSFET View

Description
This POWER MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features
■ Extremely dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization

Application
■ Switching applications

Part Name(s) : N3PF06 STN3PF06 ETC
Unspecified
Description : P-CHANNEL 60 V - 0.20 ?- 2.5 A - SOT-223 STRIPFET? II POWER MOSFET View

[ST-Microelectronics]

Description
This POWER MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features
■ Extremely dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization

Application
■ Switching applications

Part Name(s) : 3NF06L STN3NF06L STN3NF06L 3NF06L ST-Microelectronics
STMicroelectronics
Description : N-channel 60 V, 0.07 ?, 4 A, SOT-223 STRIPFET? II POWER MOSFET View

DESCRIPTION
This POWER MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.07 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ LOW THRESHOLD DRIVE

APPLICATIONS
■ DC-DC & DC-AC COVERTERS
■ DC MOTOR CONTROL (DISK DRIVERS, etc.)
■ SYNCHRONOUS RECTIFICATION

Part Name(s) : STN4NF03L_06 ST-Microelectronics
STMicroelectronics
Description : N-channel 30V - 0.039? - 6.5A - SOT-223 STRIPFET? II POWER MOSFET View

Description
This POWER MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

General features
■ Low threshold drive

Applications
■ Switching application


Part Name(s) : D25NF10LA STD25NF10LA ST-Microelectronics
STMicroelectronics
Description : N-channel 100 V, 0.030 ?, 25 A DPAK STRIPFET? II POWER MOSFET View

Description
This POWER MOSFET has been developed using STMicroelectronics’ unique STRIPFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving
requirements.

■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Logic level device

Applications
■ Switching application
■ Automotive
 

Part Name(s) : STH260N6F6-2 260N6F6 ST-Microelectronics
STMicroelectronics
Description : N-channel 60 V, 1.7 m? typ., 180 A STRIPFET? VI DeepGATE? POWER MOSFET in HPAK-2 package View

Description
This device is an N-channel POWER MOSFET developed using the 6th generation of STRIPFET™ DeepGATE™ technology, with a new gate structure. The resulting POWER MOSFET exhibits the lowest RDS(on) in all packages.

Features
■ Low gate charge
■ Very low on-resistance
■ High avalanche ruggedness

Applications
■ Switching applications

Part Name(s) : 80NF70 STP80NF70 ST-Microelectronics
STMicroelectronics
Description : N-channel 68 V, 0.0082 ?, 98 A, TO-220 STRIPFET? II POWER MOSFET View

Description
The STP80NF70 is a N-channel POWER MOSFET realized with STMicroelectronics unique STRIPFET™ process. It has specifically been designed to minimize input capacitance and gate charge. The device is therefore suitable in advanced high-efficiency switching applications.

Features
■ Exceptional dv/dt capability
■ 100% avalanche tested

Application
■ Switching applications

Part Name(s) : STN3NE06L ST-Microelectronics
STMicroelectronics
Description : N - CHANNEL 60V - 0.10 ? - 3A - SOT-223 STRIPFET? POWER MOSFET View

DESCRIPTION
This POWER MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™ " stip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.10 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ AVALANCHE RUGGED TECHNOLOGY
■ 100 % AVALANCHE TESTED
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ DC MOTOR CONTROL (DISK DRIVES,etc.)
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION

Part Name(s) : 75NF68 STP75NF68 ST-Microelectronics
STMicroelectronics
Description : N-channel 68 V, 0.010 ?, 80 A, TO-220 STRIPFET? II POWER MOSFET View

Description
This POWER MOSFET series realized with STMicroelectronics unique STRIPFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore
suitable in advanced high-efficiency switching applications.

■ Exceptional dv/dt capability
■ 100% avalanche tested

Application
■ Switching applications

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