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Description : P-CHANNEL 60V - 0.18 Ω - 10A IPAK/DPAK STripFET™ II POWER MOSFET

DESCRIPTION
This POWER MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.

■ TYPICAL RDS(on) = 0.18
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE
■ APPLICATION ORIENTED CHARACTERIZATION
■ ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL

APPLICATIONS
■ MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS

ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAK STripFET™ II POWER MOSFET

DESCRIPTION
This POWER MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.08 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ LOW GATE CHARGE
■ LOW THRESHOLD DRIVE
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")

APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT

ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 60V - 0.020 Ω - 28A IPAK/DPAK STripFET™ II POWER MOSFET

DESCRIPTION
This POWER MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.020Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")

APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ MOTOR CONTROL , AUDIO AMPLIFIERS
■ SOLENOID AND RELAY DRIVERS
■ DC-DC & DC-AC CONVERTERS

STMICROELECTRONICS
STMicroelectronics
Description : N-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAK STripFET™ II POWER MOSFET

DESCRIPTION
This POWER MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
   
■ TYPICAL RDS(on) = 0.08Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ LOW GATE CHARGE
■ THROUGH-HOLE IPAK (TO-251) POWER
    PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252)
    POWER PACKAGE IN TAPE & REEL
    (SUFFIX “T4")
   
APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ MOTOR CONTROL , AUDIO AMPLIFIERS
■ SOLENOID AND RELAY DRIVERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT
   

ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 60V - 0.1Ω - 10A DPAK STripFETPOWER MOSFET

DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

■ TYPICAL RDS(on) = 0.1Ω
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”)

APPLICATIONS
■ DC-DC & DC-AC CONVERTERS
■ DC MOTOR CONTROL

 

Part Name(s) : STD12NF06-1
ST-Microelectronics
STMicroelectronics
Description : N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET™ II POWER MOSFET

Description
This POWER MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
   
General features   
■ Exceptional dv/dt capability
■ Low gate charge
   
Applications
■ Switching application
   

STMICROELECTRONICS
STMicroelectronics
Description : N-CHANNEL 100V - 0.22 Ω - 6A IPAK/DPAK LOW GATE CHARGE STripFETPOWER MOSFET

DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highe fficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

■ TYPICAL RDS(on) = 0.22 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW THRESHOLD DRIVE
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")

ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 60V - 0.042 Ω - 19A IPAK/DPAK STripFETPOWER MOSFET

DESCRIPTION
This POWER MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.042 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ 175 oC OPERATING TEMPERATURE
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL(SUFFIX “T4")

APPLICATIONS
■ DC MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION

ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 60V - 0.038 Ω - 19A IPAK/DPAK STripFETPOWER MOSFET

DESCRIPTION
This POWER MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.038 Ω
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RALAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS

Part Name(s) : STD30PF03L
ST-Microelectronics
STMicroelectronics
Description : P-CHANNEL 30V - 0.025Ω - 24A DPAK/IPAK STripFET™ II POWER MOSFET

DESCRIPTION
This POWER MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance and low gate charge.
   
■ TYPICAL RDS(on) = 0.025Ω
■ STANDARD OUTLINE FOR EASY
    AUTOMATED SURFACE MOUNT ASSEMBLY
■ LOW THRESHOLD DRIVE
■ LOW GATE CHARGE
■ EXTREMELY LOW FIGURE OF MERIT
    (RDS(on) * Qg)
   
APPLICATIONS
■ DC-DC CONVERTERS
   

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