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Part Name(s) : STD12NF06LT4_03 STD12NF06L_03 STD12NF06L-1_03 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 60V - 0.08 ? - 12A IPAK/DPAK STRIPFET? II POWER MOSFET View

DESCRIPTION
This POWER MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.08 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ LOW GATE CHARGE
■ LOW THRESHOLD DRIVE
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")

APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT

Part Name(s) : STD45NF75 STD45NF75T4 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 75V - 0.018 ? -40A DPAK STRIPFET? II POWER MOSFET View

DESCRIPTION
This POWER MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.018
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")

APPLICATIONS
■ HIGH CURRENT, SWITCHING APPLICATIONS

Part Name(s) : STD12NF06 STD12NF06-1 STD12NF06T4 STMICROELECTRONICS
STMicroelectronics
Description : N-CHANNEL 60V - 0.08 ? - 12A IPAK/DPAK STRIPFET? II POWER MOSFET View

DESCRIPTION
This POWER MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
   
■ TYPICAL RDS(on) = 0.08Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ LOW GATE CHARGE
■ THROUGH-HOLE IPAK (TO-251) POWER
    PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252)
    POWER PACKAGE IN TAPE & REEL
    (SUFFIX “T4")
   
APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ MOTOR CONTROL , AUDIO AMPLIFIERS
■ SOLENOID AND RELAY DRIVERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT
   

Part Name(s) : STD10PF06 STD10PF06T4 STD10PF06 STD10PF06-1 STD10PF06T4 ST-Microelectronics
STMicroelectronics
Description : P-CHANNEL 60V - 0.18 ? - 10A IPAK/DPAK STRIPFET? II POWER MOSFET View

DESCRIPTION
This POWER MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.

■ TYPICAL RDS(on) = 0.18 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE
■ APPLICATION ORIENTED CHARACTERIZATION
■ ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL

APPLICATIONS
■ MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS


Part Name(s) : STD90NH02L STD90NH02L-1 STD90NH02LT4 STD90NH02L STD90NH02LT4 STD90NH02L-1 D90NH02L ST-Microelectronics
STMicroelectronics
Description : N-channel 24V - 0.0052? - 60A - DPAK/IPAK STRIPFET? II POWER MOSFET View

DESCRIPTION
The STD90NH02L utilizes the latest advanced design rules of ST’s proprietary STRIPFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.

■ TYPICAL RDS(on) = 0.0052 Ω @ 10 V
■ TYPICAL RDS(on) = 0.007 Ω @ 5 V
■ RDS(ON) * Qg INDUSTRY’s BENCHMARK
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
■ LOW THRESHOLD DEVICE
■ THROUGH-HOLE IPAK (TO-251) POWER
   PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252)
   POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")

APPLICATIONS
■ SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES

Part Name(s) : STD10NF06L STD10NF06L-T4 STD10NF06LT4 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 60V - 0.1? - 10A DPAK STRIPFET? POWER MOSFET View

DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STRIPFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

■ TYPICAL RDS(on) = 0.1Ω
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”)

APPLICATIONS
■ DC-DC & DC-AC CONVERTERS
■ DC MOTOR CONTROL

 

Part Name(s) : STD6NF10 STD6NF10-1 STD6NF10T4 STMICROELECTRONICS
STMicroelectronics
Description : N-CHANNEL 100V - 0.22 ? - 6A IPAK/DPAK LOW GATE CHARGE STRIPFET? POWER MOSFET View

DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STRIPFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highe fficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

■ TYPICAL RDS(on) = 0.22 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW THRESHOLD DRIVE
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")

Part Name(s) : STD100NH02L STD100NH02LT4 STD100NH02L-1 D100NH02L STD100NH02L STD100NH02L_06 STD100NH02LT4 STD100NH02L-1 D100NH02L ST-Microelectronics
STMicroelectronics
Description : N-channel 24V - 0.0042? - 60A - DPAK - IPAK STRIPFET? II POWER MOSFET View

DESCRIPTION
The STD100NH02L utilizes the latest advanced design rules of ST’s proprietary STRIPFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.

■ TYPICAL RDS(on) = 0.0042 Ω @ 10 V
■ TYPICAL RDS(on) = 0.005 Ω @ 5 V
■ RDS(ON) * Qg INDUSTRY’s BENCHMARK
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
■ LOW THRESHOLD DEVICE
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")

APPLICATIONS
■ SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES

Part Name(s) : STD19NE06 STD19NE06-1 STD19NE06-T4 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 60V - 0.042 ? - 19A IPAK/DPAK STRIPFET? POWER MOSFET View

DESCRIPTION
This POWER MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.042 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ 175 oC OPERATING TEMPERATURE
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL(SUFFIX “T4")

APPLICATIONS
■ DC MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION

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