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Part Name(s) : 2N6080 NJSEMI
New Jersey Semiconductor
Description : NPN SILICON RF POWER TRANSISTOR

4.0w - 175Mhz NPN SILICON RF POWER TRANSISTOR

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Part Name(s) : NTE299 NTE-Electronic
NTE Electronics
Description : SILICON NPN TRANSISTOR RF POWER Amp, Driver

SILICON NPN TRANSISTOR RF POWER Amp, Driver

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Part Name(s) : MRF648 Motorola
Motorola => Freescale
Description : NPN SILICON RF POWER TRANSISTOR

60 - 470 MHz

CONTROLLED Q RF POWER TRANSISTOR NPN SILICON

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Part Name(s) : MRF476 Motorola
Motorola => Freescale
Description : RF POWER TRANSISTOR NPN SILICON

RF POWER TRANSISTOR NPN SILICON
3.0 W (PEP) - 3.0 W (CW) - 30 MHz

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Part Name(s) : 2SC2166 C2166 NJSEMI
New Jersey Semiconductor
Description : SILICON NPN POWER TRANSISTOR Final RF POWER Output

SILICON NPN POWER TRANSISTOR Final RF POWER Output

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Part Name(s) : MRF238 ASI
Advanced Semiconductor
Description : NPN SILICON RF POWER TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:
The MRF238is Designed for 13.6 V FM Large-Signal Amplifier Applications to 175 MHz.

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Part Name(s) : MRF16030 MACOM
Tyco Electronics
Description : RF Line NPN SILICON RF POWER TRANSISTOR

The RF Line NPN SILICON RF POWER TRANSISTOR

Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz.
   
• Specified 28 Volt, 1.6 GHz Class–C Characteristics
    Output POWER = 30 Watts
    Minimum Gain = 7.5 dB, @ 30 Watts
    Minimum Efficiency = 40% @ 30 Watts
• Characterized with Series Equivalent Large–Signal Parameters from 1500 MHz to 1700 MHz
SILICON Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
• Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

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Part Name(s) : BF562 Q62702-F542 Siemens
Siemens AG
Description : NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR

The TRANSISTOR is particularly suitable for controllable VHF input stages in TV tuners.

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Part Name(s) : MRF16006 MACOM
Tyco Electronics
Description : The RF Line NPN SILICON RF POWER TRANSISTOR

The RF Line NPN SILICON RF POWER TRANSISTOR

Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz.

• Specified 28 Volt, 1.6 GHz Class–C Characteristics
    Output POWER = 6 Watts
    Minimum Gain = 7.4 dB, @ 6 Watts
    Minimum Efficiency = 40% @ 6 Watts
• Characterized with Series Equivalent Large–Signal Parameters from 1500 MHz to 1700 MHz
SILICON Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

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Part Name(s) : TPV5051-1 ASI
Advanced Semiconductor
Description : NPN SILICON RF POWER TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:
The TPV5051-1is Designed for AB Push Pull, Common Emitter from 470 to 860 MHz Applications.

 

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