datasheetbank_Logo     Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

P/N + Description + Content Search

Search Words :

Part Name(s) : 2N5643 NJSEMI
New Jersey Semiconductor
Description : NPN SILICON RF POWER TRANSISTOR View

NPN SILICON RF POWER TRANSISTOR

40 W - 175 MHz RF POWER TRANSISTOR NPN SILICON

Part Name(s) : 2N5641 NJSEMI
New Jersey Semiconductor
Description : NPN SILICON RF POWER TRANSISTOR View

NPN SILICON RF POWER TRANSISTOR

7.0 W - 175 MHz RF POWER TRANSISTOR NPN SILICON

Part Name(s) : 2N6080 NJSEMI
New Jersey Semiconductor
Description : NPN SILICON RF POWER TRANSISTOR View

4.0w - 175Mhz NPN SILICON RF POWER TRANSISTOR

Part Name(s) : NTE299 NTE-Electronic
NTE Electronics
Description : SILICON NPN TRANSISTOR RF POWER Amp, Driver View

SILICON NPN TRANSISTOR RF POWER Amp, Driver


Part Name(s) : MRF476 Motorola
Motorola => Freescale
Description : RF POWER TRANSISTOR NPN SILICON View

RF POWER TRANSISTOR NPN SILICON
3.0 W (PEP) - 3.0 W (CW) - 30 MHz

Part Name(s) : NTE16002 NTE-Electronic
NTE Electronics
Description : SILICON NPN TRANSISTOR RF POWER Output, PO = 13.5W, 175MHz View

SILICON NPN TRANSISTOR RF POWER Output, PO = 13.5W, 175MHz

Part Name(s) : 2SC2166 C2166 NJSEMI
New Jersey Semiconductor
Description : SILICON NPN POWER TRANSISTOR Final RF POWER Output View

SILICON NPN POWER TRANSISTOR Final RF POWER Output

Part Name(s) : MRF238 ASI
Advanced Semiconductor
Description : NPN SILICON RF POWER TRANSISTOR View

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:
The MRF238is Designed for 13.6 V FM Large-Signal Amplifier Applications to 175 MHz.

Part Name(s) : MRF16030 MACOM
Tyco Electronics
Description : RF Line NPN SILICON RF POWER TRANSISTOR View

The RF Line NPN SILICON RF POWER TRANSISTOR

Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz.
   
• Specified 28 Volt, 1.6 GHz Class–C Characteristics
    Output POWER = 30 Watts
    Minimum Gain = 7.5 dB, @ 30 Watts
    Minimum Efficiency = 40% @ 30 Watts
• Characterized with Series Equivalent Large–Signal Parameters from 1500 MHz to 1700 MHz
SILICON Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
• Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

1

2345678910 Next

All Rights Reserved © datasheetbank.com 2014 - 2020 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]